ZXTP2012Z
Datasheet Number: DS33713 Rev. 2 - 2 1 of 7
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60V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
Features
• BVCEO > -60V
• High current capability Max Continuous Current IC = -4.3A
• Low saturation voltage VCE(sat) < -65mV @ IC = -1A
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free, “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Application
• Emergency lighting circuits
• Motor driving (including DC fans)
• Backlight inverters
• Power switches
• MOSFET gate drivers
Mechanical Data
• Case: SOT89
• Moisture Sensitivity: Level 1 per J-STD-020
• UL Flammability Rating 94V-0
• Terminals: Matte Tin Finish
• Weight: 0.052 grams (Approximate)
Ordering Information (Note 3 & 4)
Product Grade Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTP2012ZTA Commercial 951 7 12 1,000
ZXTP2012Z-13R Commercial 951 7 12 4,000
ZXTP2012ZQTA Automotive 951 7 12 1,000
Notes: 1. No purposefully added lead.
2. Halogen and Antimony Free. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
4. Products with Q-suffix are automotive grade
Marking Information
Top View
SOT89
Device symbol Pin-out Top
951 = Product Type Marking Code
ZXTP2012Z
Datasheet Number: DS33713 Rev. 2 - 2 2 of 7
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -7 V
Continuous Collector Current (Note 5) IC -4.3 A
Peak Pulse Current ICM -15 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Linear derating factor PD 1.5
12 W
mW/°C
Power Dissipation (Note 6)
Linear derating factor PD
2.1
16.8 W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5) RθJA 83 °C/W
Thermal Resistance, Junction to Ambient (Note 6) RθJA 60 °C/W
Thermal Resistance, Junction to Leads (Note 7) RθJL 3.23 °C/W
Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C
Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
7. Thermal resistance from junctio n to solder-point (on the exposed collector pad).
ZXTP2012Z
Datasheet Number: DS33713 Rev. 2 - 2 3 of 7
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Thermal Characteristics
100m 1 10 100
10m
100m
1
10
Single Puls e. Tamb=25°C
25X25mm PCB 1oz copper
VCE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe O p erating Area
-IC Collector Current (A)
-VCE Collector-Emitter Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
25X25mm PCB
1 oz copper
50X50mm PCB
1oz copper
Derating Curve
Temperature (°C)
Max Power Di ssipat ion (W)
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80 25X25mm PCB 1oz copper)
Transient Therm al Im pe da nc e
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resist ance (° C/W)
Pulse Width (s ) 100µ 1m 10m 100m 1 10 100 1k
1
10
100 Single Pulse. Tamb=25°C
25X25mm PCB 1oz copper
Pulse Power Dissipation
Pul s e Width (s )
Max Power Dissi p a t i o n (W )
ZXTP2012Z
Datasheet Number: DS33713 Rev. 2 - 2 4 of 7
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ. Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -100 -120 - V
IC = -100µA
Collector-Emitter Breakdown Voltage (Notes 8) BVCER -100 -120 - V
IC = -1µA, RB≤1kΩ
Collector-Emitter Breakdown Voltage (Notes 8) BVCEO -60 -80 - V
IC = -10mA
Emitter-Base Breakdown Voltage BVEBO -7 -8.1 - V
IE = -100µA
Collector Cutoff Current ICBO - < -1
-20
-500 nA
nA VCB = -80V
VCB = -80V, TA = 100°C
Collector Cutoff Current ICER
R ≤1kΩ - < -1
-20
-500 nA
nA VCB = -80V
VCB = -80V, TA = 100°C
Emitter Cutoff Current IEBO - < -1 -10 nA
VEB = -6V
DC current transfer Static ratio (Notes 8) hFE
100
100
45
10
250
200
90
25
300
IC = -10mA, VCE = -1V
IC = -2A, VCE = -1V
IC = -5A, VCE = -1V
IC = -10A, VCE = -1V
Collector-Emitter Saturation Voltage (Notes 8) VCE(sat) -
-14
-50
-75
-160
-20
-65
-110
-215 mV
IC = -100mA, IB = -10mA
IC = -1A, IB = -100mA
IC = -2A, IB = -200mA
IC = -5A, IB = -500mA
Base-Emitter Saturation Voltage (Notes 8) VBE
(
sat
)
- -950 -1050 mV
IC = -5A, VCE = -1V
Base-Emitter Turn-on Voltage (Notes 8) VBE
(
on
)
- -840 -950 mV
IC = -5A, VCE = -1V
Transitional Frequency (Notes 8) fT - 120 - MHz
IC = -100mA, VCE = -10V,
f = 50MHz
Output capacitance Cobo - 48 - pF
VCB = -10V, f = 1MHz,
Switching Time tON - 39 - ns
VCC = -10V, IC = -1A,
IB1 = IB2 =-100mA
tOFF 370
Notes: 8. Measured under pulsed conditions. Pulse wi dth ≤ 300μs. Duty cycle ≤2%.
ZXTP2012Z
Datasheet Number: DS33713 Rev. 2 - 2 5 of 7
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Typical Electrical Characteristics
1m 10m 100m 1 10
10m
100m
1
1m 10m 100m 1 10
0.0
0.1
0.2
0.3
0.4
0.5
1m 10m 100m 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1m 10m 100m 1 10
0.4
0.6
0.8
1.0
1.2
1.4
1m 10m 100m 1 10
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100
150
200
250
300
VCE(SAT) v IC
Tamb=25°C
IC/IB=50
IC/IB=20
IC/IB=10
- VCE(SAT) (V)
- IC C o ll ec to r C ur re nt (A)
VBE(SAT) v IC
IC/IB=10
100°C
25°C
-55°C
- VCE(SAT) (V)
- IC Co l lector Current (A)
hFE v IC
VCE=1V
-55°C
25°C
100°C
Normalised Gain
- IC Co lle c to r Current (A)
25°C
VCE(SAT) v IC
IC/IB=10
100°C
-55°C
- VBE(SAT) (V)
- IC Co l lector Cu rre nt (A)
VBE(ON) v IC
VCE=1V
100°C
25°C
-55°C
- VBE(ON) (V)
- IC Co l lector Current (A)
Typical Gain (hFE)
ZXTP2012Z
Datasheet Number: DS33713 Rev. 2 - 2 6 of 7
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Package Outline Dimensions
Suggested Pad Layout
SOT89
Dim Min Max
A 1.40 1.60
B 0.44 0.62
B1 0.35 0.54
C 0.35 0.43
D 4.40 4.60
D1 1.52 1.83
E 2.29 2.60
e 1.50 Typ
e1 3.00 Typ
H 3.94 4.25
L 0.89 1.20
All Dimensions in mm
Dimensions Value (in mm)
X 0.900
X1 1.733
X2 0.416
Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125
C 1.500
e
D
H
L
A
C
E
8° (4X)
B1
B
D1
R0.200
e1
Y1
X1
Y2
Y
C
X (3 x)
Y3 Y4
X2 (2x)
ZXTP2012Z
Datasheet Number: DS33713 Rev. 2 - 2 7 of 7
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
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