Semiconductor Diodes Minimum Forward Maximum Reverse Max Peak Current Current Rect / . ; Type Construction Inverse Current Application Connections Volts mA at Volts yA at Volts (mA) I.T.T. (Continued) Current Types (Continued) 1N3062 \ wae 75 _ _ 0.1 75 _ Al 1N3065 f Silicon planar 75 - ol 15 Al 1N4148 75 - 0.025 20 150 Al 1N4149 75 _ 0. 025 20 150 Al 1N4150 60 _ 0.1 50 150 Al iN4151 75 _ 0. 05 50 150 General purpose Al 1N4154 Silicon planar epitaxial 35 _ _ 0.1 25 150 Al 1N4446 15 _ _ 0.025 20 150 Al 1N4447 75 - - 0.025 20 150 Al 1N4448 75 _ _ 0. 025 20 150 Al 1N4449 75 ~ _ 0.025 20 150 Al MULLARD Replacement Types : . High speed * AAY11 Germanium point contact 90 10 1.5 250 90 35 { switching A2 BAX78 Silicon planar epitaxial 50 _ - 0,05 50 115 High speed logic A2 BYX26-60 aye 60 _ _ 1 60 250 Al BYX26- sof Silicon avalanche 150 _ _ 1 150 peot General purpose Al GEXM66 Germanium point contact 5 _ _ 50 1 15* V.H.F. mixers Al Current Types AA119 Germanium point contact 45 0.1 0.25 350 45 35* A.M. detector Al AAY30 50 50 30 400 {Bish Speed Al switching AAY32 30 _ _ 70 30 110 General purpose Al AAY33 12 _ 100 12 240 High speed Al AAZ13 Germanium gold bonded 8 1 0.27 150 8 sor} switching A2 AAZ15 75 0.1 0.15 25 75 140* General purpose A2 AAZIT 50. 0.15 150 50 110* { High speed A2 switching BA102 Silicon variable capacitance 20 Cap. 20 to 45pF 100 20 _ TV,A.F.C. Al BA145 Double diffused silicon 300 ~ ~ 10 300 10* { Colour TV Al detectors BA148 Silicon 350 200 300 300* High speed logic Al BA182 Silicon planar 35 ~ 0.1 20 100 { V.H.F. tuner A13 : switching BA314 _ _ _ 250 L.V. stabiliser Al BA316 10 _ _ ~_ _ 100 Al BA317 30 _ _ ~ _ 100 | General purpose Al BA318 50 ~ _ 100 Al BAV10 60 _ _ _- 300 High speed gating Al BAV18 Silico 60 _ _ _ 200 Al BAV19 macon 120 ~ 200 Switchi Al BAV20 180 ~ ~ ~ ~ 200 witening Al BAV21 250 _ _ ~ _ 2007 Al BAV44 65 _ _ ~ 1A High speed A10 BAV45 35 _ _ 0.01 20 50 Low leakage C6 BAW62 75 _ > _ 100 High speed logic Al BAX12 120 _ 100 90 400* General purpose Al BAX13 | : ays 50 200 50 75* Fast logic Al BAX16 | Diffused silicon 150 _ 0.025 50 200 | General purpose BAX17. 200 0.025 50 200 purp Al BB1056 ( 28 Cap.2.0to 2.3pF 0.1 28 _ U.H.F. tuners Al13 BB105G a 28 Cap.1.8 to 2.8pF 0.1 28 ~ V.H.F. tuners A13 BB110 | Silicon variable capacitance = 39 Gay 27 to 81pF 0.02 30 100 F.M. tuners A13 BB113 32 Cap. 230 to 280pF 0.05 32 _ A.M. tuners 100 . High speed 2 OA47 Germanium gold bonded 25 0.1 0.25 10 25 110 { switching A2 Continued 80