STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in HPAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes VDS RDS(on) max. 1200 V 0.69 ID PTOT STH12N120K5-2 2 H PAK-2 STP12N120K5 TO-220 STW12N120K5 12 A 250 W STWA12N120K5 2 3 3 2 1 TO-247 long leads 1 TO-247 Figure 1: Internal schematic diagram D(TAB) D(2, TAB) Worldwide best FOM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description G(1) These very high voltage N-channel Power MOSFETs are designed using MDmeshTM K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. G(1) S(2, 3) 2 (H PAK-2) S(3) ( TO-220, TO-247 and TO-247 long leads) Table 1: Device summary Order code Marking 2 STH12N120K5-2 STP12N120K5 STW12N120K5 H PAK-2 12N120K5 STWA12N120K5 April 2015 Package Packing Tape and reel TO-220 TO-247 Tube TO-247 long leads DocID022133 Rev 4 This is information on a product in full production. 1/21 www.st.com Contents STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 2/21 4.1 HPAK-2 package information ......................................................... 11 4.2 TO-220 type A package information................................................ 14 4.3 TO-247 package information ........................................................... 16 4.4 TO-247 long leads package information ......................................... 18 Revision history ............................................................................ 20 DocID022133 Rev 4 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit 30 V ID Drain current at TC = 25 C 12 A ID Drain current at TC = 100 C 7.6 A Drain current (pulsed) 48 A Total dissipation at TC = 25 C 250 W 4 A IDM (1) PTOT IAR (2) Max current during repetitive or single pulse avalanche EAS (3) Single pulse avalanche energy 215 mJ dv/dt (4) Peak diode recovery voltage slope 4.5 V/ns dv/dt (5) MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 C Tj Tstg Operating junction temperature Storage temperature Notes: (1) (2) (3) Pulse width limited by safe operating area. Pulse width limited by TJmax. Starting TJ = 25 C, ID=IAS, VDD= 50 V (4) ISD 12 A, di/dt 100 A/s, VPeak V(BR)DSS (5) VDS 960 V Table 3: Thermal data Value Symbol Parameter 2 H PAK-2 TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb Thermal resistance junction-pcb max TO-247 TO-247 long leads 0.5 62.5 30 DocID022133 Rev 4 Unit C/W 50 C/W C/W 3/21 Electrical characteristics 2 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 4: On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. Unit 1200 V VGS = 0 V, VDS = 1200 V 1 A VGS = 0, VDS = 1200 V, Tc = 125 C 50 A 10 A 4 5 V 0.62 0.69 Min. Typ. Max. Unit - 1370 - pF - 110 - pF - 0.6 - pF - 128 - pF - 42 - pF IDSS Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 V, VGS = 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 A RDS(on) Static drain-source onresistance VGS = 10 V, ID= 6 A 3 Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr) (1) Co(er) (2) Test conditions VGS = 0 V, VDS = 100 V, f = 1 MHz Equivalent capacitance, time-related Equivalent capacitance, energy-related VGS = 0, VDS = 0 to 960 V RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 3 - Qg Total gate charge - 44.2 - nC Qgs Gate-source charge - 7.3 - nC Qgd Gate-drain charge VDD = 960 V, ID = 12 A VGS = 10 V (see Figure 18: "Gate charge test circuit" ) - 30 - nC Notes: (1) Time-related is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDSS (2) Energy-related is defined as a constant equivalent capacitance giving the same stored energy as C oss when VDS increases from 0 to 80% VDSS 4/21 DocID022133 Rev 4 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Electrical characteristics Table 6: Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time tf Typ. Max. Unit - 23 - ns - 11 - ns - 68.5 - ns - 18.5 - ns VDD = 600 V, ID = 6 A, RG = 4.7 , VGS = 10 V (see Figure 20: "Unclamped inductive load test circuit") Rise time td(off) Min. Turn-off delay time Fall time Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 12 A ISDM Source-drain current (pulsed) - 48 A ISD = 12 A, VGS = 0 V - 1.5 V ISD = 12 A, VDD = 60 V di/dt = 100 A/s, (see Figure 19: "Test circuit for inductive load switching and diode recovery times") - 630 ns - 12.6 C - 40 A ISD = 12 A,VDD = 60 V di/dt = 100 A/s, Tj = 150 C (see Figure 19: "Test circuit for inductive load switching and diode recovery times") - 892 ns - 15.6 C - 35 A Min Typ. (1) VSD Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1) Pulsed: pulse duration = 300s, duty cycle 1.5% Table 8: Gate-source Zener diode Symbol V(BR)GSO Parameter Test conditions Gate-source breakdown voltage IGS = 1 mA, ID = 0 A 30 Max. - Unit V The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and costeffective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. DocID022133 Rev 4 5/21 Electrical characteristics 2.1 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Electrical characteristics (curves) 2 Figure 2: Safe operating area for H PAK-2 and TO-220 2 Figure 3: Thermal impedance for H PAK-2 and TO-220 GIPD300320150945MT ID (A) K =0.5 ) 10s 100s 1ms DS (o n Op er m atio ite d n in by t m hi s a ax R rea is 10 10ms Li 1 0.2 0.1 10 -1 0.05 0.02 Zth= K*Rthj-c = tp/ 0.1 0.01 Tj=150C Tc=25C Single pulse 0.01 0.1 Single pulse 10 1 10 100 1000 GIPD300320151033MT ID (A) 10 -5 V DS(V) Figure 4: Safe operating area for TO-247 and TO-247 long leads tp -2 10 -4 10 -3 10 -2 t P (s) 10 -1 Figure 5: Thermal impedance for TO-247 and TO-247 long leads GC18460 K =0.5 10s 0.2 n) 100s DS (o Op er m atio ite d n in by t m hi s a ax R rea is 10 0.05 1ms 0.02 10ms Li 1 0.1 10 -1 0.01 10 -2 Z th= K*R thj-c = t p/ Single pulse 0.1 Tj=150C Tc=25C Single pulse 0.01 0.1 tp 10 1 10 100 1000 V DS(V) -3 10 Figure 6: Output characteristics -5 10 -4 10 -3 10 -2 10 -1 t p (s) Figure 7: Transfer characteristics GIPD300320151056MT ID(A) V GS=9, 10V GIPD300320151057MT ID (A) V DS=20V 8V 20 20 15 15 7V 10 10 5 5 6V 0 0 0 6/21 5 10 15 V DS(V) DocID022133 Rev 4 5 6 7 8 9 V GS(V) STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Electrical characteristics Figure 8: Gate charge vs gate-source voltage GIPD300320151058MT V DS V GS (V) GIPD300320151223MT R DS(on) () (V) V DD=960V ID=12 A 10 Figure 9: Static drain-source on-resistance 1000 V DS 8 800 6 600 V GS=10V 0.78 0.74 0.7 0.66 4 400 2 200 0 Q g(nC) 0 0 10 20 30 40 Figure 10: Capacitance variations GIPD300320151226MT C (pF) 0.62 0.58 0.54 0 10 5 15 ID(A) Figure 11: Output capacitance stored energy GIPD300320151232MT E oss (J) 10000 20 24 Cies 1000 20 16 100 Coes 12 Cres 8 10 1 4 0.1 0.1 1 10 100 Figure 12: Normalized gate threshold voltage vs temperature GIPD300320151241MT V GS(th) (norm) 0 V DS(V) ID=100 A 0 200 400 800 600 1000 V DS(V) Figure 13: Normalized on-resistance vs temperature GIPD300320151244MT R DS(on) (norm) V GS=10V 2.5 1.2 2 1 1.5 0.8 1 0.6 0.4 -75 0.5 -25 25 75 125 T J(C) DocID022133 Rev 4 0 -75 -25 25 75 125 T J(C) 7/21 Electrical characteristics STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Figure 15: Source-drain diode forward characteristics Figure 14: Normalized V(BR)DSS vs temperature GIPD300320151249MT V (BR)DSS (norm) GIPD300320151251MT V SD (V) T J=-50C ID=1m A 0.9 1.08 T J=25C 0.8 1 0.7 T J=150C 0.92 0.6 0.84 -75 -25 25 125 75 0.5 T J(C) 2 4 6 8 10 ISD(A) Figure 16: Maximum avalanche energy vs starting TJ GIPD300320151255MT E AS (mJ) ID=12 A 200 V DD=50 V 150 100 50 0 -75 8/21 -25 25 75 125 DocID022133 Rev 4 T J(C) STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 3 Test circuits Test circuits Figure 17: Switching times test circuit for resistive load Figure 18: Gate charge test circuit VDD 47 k 12 V 1 k 100 nF I G = CONST Vi V GS 100 D.U.T. VG 2.7 k 2200 F 47 k 1 k PW AM01469v 1 Figure 19: Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B Figure 20: Unclamped inductive load test circuit A D G S L=100 H 3.3 F B 25 1000 F D G RG VDD D.U.T. S AM01470v1 Figure 21: Unclamped inductive waveform Figure 22: Switching time waveform t on V(BR)DSS t d(on) VD t off tr t d(off) tf 90% 90% I DM 10% ID VDD 10% 0 VDD VGS AM01472v 1 0 DocID022133 Rev 4 10% VDS 90% AM01473v 1 9/21 Package information 4 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Package information In order to meet environmental requirements, ST offers these devices in different grades of (R) (R) ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. (R) ECOPACK is an ST trademark. 10/21 DocID022133 Rev 4 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 4.1 Package information HPAK-2 package information Figure 23: HPAK-2 package outline 8159712_D DocID022133 Rev 4 11/21 Package information STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Table 9: HPAK-2 mechanical data mm Dim. Min. 12/21 Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 L 15.30 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0 8 DocID022133 Rev 4 - 7.80 15.80 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Package information Figure 24: HPAK-2 recommended footprint 8159712_D DocID022133 Rev 4 13/21 Package information 4.2 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 TO-220 type A package information Figure 25: TO-220 type A package outline 14/21 DocID022133 Rev 4 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Package information Table 10: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 D1 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 oP 3.75 3.85 Q 2.65 2.95 DocID022133 Rev 4 15/21 Package information 4.3 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 TO-247 package information Figure 26: TO-247 package outline 16/21 DocID022133 Rev 4 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Package information Table 11: TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 OP 3.55 3.65 OR 4.50 5.50 S 5.30 DocID022133 Rev 4 5.50 5.70 17/21 Package information 4.4 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 TO-247 long leads package information Figure 27: TO-247 long leads package outline 18/21 DocID022133 Rev 4 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Package information Table 12: TO-247 long leads mechanical data mm. Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 4.30 P 3.50 Q 5.60 S 6.05 DocID022133 Rev 4 3.60 3.70 6.00 6.15 6.25 19/21 Revision history 5 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Revision history Table 13: Document revision history Date Revision 23-Aug-2011 1 17-Jan-2013 2 Changes First release. 16-May-2014 3 08-Apr-2015 4 Minor text changes 2 Added: H PAK package The part number STB12N120K5 has been moved to a separate datasheet Updated: Updated: mechanical data for TO-247 package The part numbers STFW12N120K5 has been moved to a separate datasheet Added: TO-247 long leads package Modified: IAR, EAS, dv/dt values in Table 2: "Absolute maximum ratings" Modified: the entire typical values in Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source drain diode" Added: Section 2.1: "Electrical characteristics (curves)" Minor text changes Updated title, silhouette and description in cover page. Updated Table 4: "On/off states", Table 5: "Dynamic", Figure 9: "Static drain-source on-resistance" and Figure 10: "Capacitance variations". Minor text change. 20/21 DocID022133 Rev 4 STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2015 STMicroelectronics - All rights reserved DocID022133 Rev 4 21/21 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: STMicroelectronics: STW12N120K5 STH12N120K5-2 STP12N120K5 STWA12N120K5