April 2015
DocID022133 Rev 4
1/21
This is information on a product in full production.
www.st.com
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs
in H²PAK-2, TO-220, TO-247 and TO-247 long leads
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order codes
VDS
RDS(on) max.
ID
PTOT
STH12N120K5-2
1200 V
0.69 Ω
12 A
250 W
STP12N120K5
STW12N120K5
STWA12N120K5
Worldwide best FOM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Order code
Marking
Package
Packing
STH12N120K5-2
12N120K5
H2PAK-2
Tape and reel
STP12N120K5
TO-220
Tube
STW12N120K5
TO-247
STWA12N120K5
TO-247 long leads
H2PAK-2 TO-220
123
TO-247 TO-247 long leads
123
D(2,TAB)
G(1)
S(3)
( TO-220, TO-247 and
TO-247 long leads)
(H PAK-2)
2
D(TAB)
G(1)
S(2, 3)
Contents
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
2/21
DocID022133 Rev 4
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1 H²PAK-2 package information ......................................................... 11
4.2 TO-220 type A package information ................................................ 14
4.3 TO-247 package information ........................................................... 16
4.4 TO-247 long leads package information ......................................... 18
5 Revision history ............................................................................ 20
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Electrical ratings
DocID022133 Rev 4
3/21
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 30
V
ID
Drain current at TC = 25 °C
12
A
ID
Drain current at TC = 100 °C
7.6
A
IDM (1)
Drain current (pulsed)
48
A
PTOT
Total dissipation at TC = 25 °C
250
W
IAR (2)
Max current during repetitive or single
pulse avalanche
4
A
EAS (3)
Single pulse avalanche energy
215
mJ
dv/dt (4)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt (5)
MOSFET dv/dt ruggedness
50
V/ns
Tj
Tstg
Operating junction temperature
Storage temperature
- 55 to 150
°C
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulse width limited by TJmax.
(3)Starting TJ = 25 °C, ID=IAS, VDD= 50 V
(4)ISD ≤ 12 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS
(5)VDS ≤ 960 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
H2PAK-2
TO-220
TO-247
TO-247 long leads
Rthj-case
Thermal resistance junction-case max
0.5
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
50
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
30
°C/W
Electrical characteristics
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
4/21
DocID022133 Rev 4
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4: On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
1200
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 1200 V
1
µA
VGS = 0, VDS = 1200 V,
Tc = 125 °C
50
µA
IGSS
Gate body leakage current
VDS = 0 V, VGS = ± 20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
3
4
5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID= 6 A
0.62
0.69
Ω
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VGS = 0 V, VDS = 100 V,
f = 1 MHz
-
1370
-
pF
Coss
Output capacitance
-
110
-
pF
Crss
Reverse transfer
capacitance
-
0.6
-
pF
Co(tr) (1)
Equivalent capacitance,
time-related
VGS = 0, VDS = 0 to 960 V
-
128
-
pF
Co(er) (2)
Equivalent capacitance,
energy-related
-
42
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
3
-
Ω
Qg
Total gate charge
VDD = 960 V, ID = 12 A
VGS = 10 V
(see Figure 18: "Gate
charge test circuit" )
-
44.2
-
nC
Qgs
Gate-source charge
-
7.3
-
nC
Qgd
Gate-drain charge
-
30
-
nC
Notes:
(1)Time-related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
(2)Energy-related is defined as a constant equivalent capacitance giving the same stored energy as Coss when
VDS increases from 0 to 80% VDSS
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Electrical characteristics
DocID022133 Rev 4
5/21
Table 6: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 600 V, ID = 6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20: "Unclamped
inductive load test circuit")
-
23
-
ns
tr
Rise time
-
11
-
ns
td(off)
Turn-off delay time
-
68.5
-
ns
tf
Fall time
-
18.5
-
ns
Table 7: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
12
A
ISDM
Source-drain current
(pulsed)
-
48
A
VSD(1)
Forward on voltage
ISD = 12 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery
time
ISD = 12 A, VDD = 60 V
di/dt = 100 A/µs,
(see Figure 19: "Test circuit
for inductive load switching
and diode recovery times")
-
630
ns
Qrr
Reverse recovery
charge
-
12.6
µC
IRRM
Reverse recovery
current
-
40
A
trr
Reverse recovery
time
ISD = 12 A,VDD = 60 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 19: "Test circuit
for inductive load switching
and diode recovery times")
-
892
ns
Qrr
Reverse recovery
charge
-
15.6
µC
IRRM
Reverse recovery
current
-
35
A
Notes:
(1)Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 8: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min
Typ.
Max.
Unit
V(BR)GSO
Gate-source
breakdown voltage
IGS = ±1 mA, ID = 0 A
30
-
V
The built-in back-to-back Zener diodes have been specifically designed to enhance the
ESD capability of the device. The Zener voltage is appropriate for efficient and cost-
effective intervention to protect the device integrity. These integrated Zener diodes thus
eliminate the need for external components.
Electrical characteristics
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
6/21
DocID022133 Rev 4
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for H2PAK-2 and
TO-220
Figure 3: Thermal impedance for H2PAK-2 and
TO-220
Figure 4: Safe operating area for TO-247 and
TO-247 long leads
Figure 5: Thermal impedance for TO-247 and
TO-247 long leads
Figure 6: Output characteristics
Figure 7: Transfer characteristics
ID
10
1
0.1
0.1 1VDS(V)
10
(A)
Operation in this area is
Limited by max R DS(on)
10µs
1ms
100µs
0.01
Tj=150°C
Tc=25°C
Single pulse
10ms
100 1000
GIPD300320150945MT
K
tpƬ
Zth= K*Rthj-c
δ= tp/Ƭ
Single pulse
0.01
δ=0.5
10-1
10-2 10-4
10-5 10-3 10-2 10-1 tP(s)
0.2
0.1
0.05
0.02
ID
10
1
0.1
0.1 1VDS(V)
10
(A)
Operation in this area is
Limited by max R DS(on)
10µs
1ms
100µs
0.01
Tj=150°C
Tc=25°C
Single pulse
10ms
100 1000
GIPD300320151033MT
K
tpƬ
Zth= K*R thj-c
δ= t p/Ƭ
Single pulse
0.01
δ=0.5
10-1
10-2
10-3
10-4
10-5 10-3 10-2 10-1
0.2
0.1
0.05
0.02
tp (s)
GC18460
ID
15
5
005VDS(V)
10
(A)
15
6V
7V
VGS=9, 10V
10
20 8V
GIPD300320151056MT
ID
20
10
057VGS(V)
9
(A)
68
5
15
VDS=20V
GIPD300320151057MT
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Electrical characteristics
DocID022133 Rev 4
7/21
Figure 8: Gate charge vs gate-source voltage
Figure 9: Static drain-source on-resistance
Figure 10: Capacitance variations
Figure 11: Output capacitance stored energy
Figure 12: Normalized gate threshold voltage vs
temperature
Figure 13: Normalized on-resistance vs temperature
VGS
6
4
2
0020 Qg(nC)
(V)
8
30 40
10 VDD=960V
ID=12A
600
400
200
0
800
1000
VDS
10
VDS
(V)
GIPD300320151058MT
GIPD300320151223MT
RDS(on)
0.62
0.58
0.54010 ID(A)
(Ω)
515
0.66
VGS=10V
0.7
0.74
0.78
20
C
100
10
1
0.10.1 10 VDS(V)
(pF)
1100
Cies
Coes
Cres
1000
10000
GIPD300320151226MT
Eoss
8
4
00200 VDS(V)
(µJ)
800
400 600
12
1000
16
20
24
GIPD300320151232MT
VGS(th)
1
0.8
0.6
0.4
-75 TJ(°C)
(norm)
-25
1.2
25 75
ID=100µ A
125
GIPD300320151241MT
1.5
1
0.5
0TJ(°C)
2
2.5
RDS(on)
(norm)
VGS=10V
-75 -25 25 75 125
GIPD300320151244MT
Electrical characteristics
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
8/21
DocID022133 Rev 4
Figure 14: Normalized V(BR)DSS vs temperature
Figure 15: Source-drain diode forward
characteristics
Figure 16: Maximum avalanche energy vs starting TJ
V(BR)DSS
-75 TJ(°C)
(norm)
-25 75
25 125
0.84
0.92
1
1.08
ID=1mA
GIPD300320151249MT
VSD
4ISD(A)
(V)
210
68
0.5
0.6
0.7
0.8
TJ=-50°C
TJ=150°C
TJ=25°C
0.9
GIPD300320151251MT
EAS
-75 25 TJ(°C)
(mJ)
-25 75 125
0
50
100
150
200 ID=12 A
VDD=50 V
GIPD300320151255MT
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Test circuits
DocID022133 Rev 4
9/21
3 Test circuits
Figure 17: Switching times test circuit for resistive
load
Figure 18: Gate charge test circuit
Figure 19: Test circuit for inductive load switching
and diode recovery times
Figure 20: Unclamped inductive load test circuit
Figure 21: Unclamped inductive waveform
Figure 22: Switching time waveform
AM01469v1
VDD
47 kΩ1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
Vi ≤ VGS
2200 μ F
PW
IG= CONST 100 Ω
100 nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
SB
G
25
AA
BB
RG
G
FAST
DIODE
D
S
L=100 µH
µF
3.3 1000
µF VDD
Ω
D.U.T.
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01472v1
AM01473v1
0
VGS 90%
VDS
ton
90%
10%
90%
10%
td(on) tr
t
td(off) tf
10%
0
off
Package information
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
10/21
DocID022133 Rev 4
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
DocID022133 Rev 4
11/21
4.1 H²PAK-2 package information
Figure 23: H²PAK-2 package outline
8159712_D
Package information
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
12/21
DocID022133 Rev 4
Table 9: H²PAK-2 mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.30
-
4.80
A1
0.03
0.20
C
1.17
1.37
e
4.98
5.18
E
0.50
0.90
F
0.78
0.85
H
10.00
10.40
H1
7.40
7.80
L
15.30
15.80
L1
1.27
1.40
L2
4.93
5.23
L3
6.85
7.25
L4
1.5
1.7
M
2.6
2.9
R
0.20
0.60
V
0°
8°
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
DocID022133 Rev 4
13/21
Figure 24: H²PAK-2 recommended footprint
8159712_D
Package information
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
14/21
DocID022133 Rev 4
4.2 TO-220 type A package information
Figure 25: TO-220 type A package outline
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
DocID022133 Rev 4
15/21
Table 10: TO-220 type A mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
Package information
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
16/21
DocID022133 Rev 4
4.3 TO-247 package information
Figure 26: TO-247 package outline
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
DocID022133 Rev 4
17/21
Table 11: TO-247 mechanical data
Dim.
mm.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
5.45
5.60
L
14.20
14.80
L1
3.70
4.30
L2
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
5.50
5.70
Package information
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
18/21
DocID022133 Rev 4
4.4 TO-247 long leads package information
Figure 27: TO-247 long leads package outline
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
DocID022133 Rev 4
19/21
Table 12: TO-247 long leads mechanical data
Dim.
mm.
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
4.30
P
3.50
3.60
3.70
Q
5.60
6.00
S
6.05
6.15
6.25
Revision history
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
20/21
DocID022133 Rev 4
5 Revision history
Table 13: Document revision history
Date
Revision
Changes
23-Aug-2011
1
First release.
17-Jan-2013
2
Minor text changes
Added: H2PAK package
The part number STB12N120K5 has been moved to a
separate datasheet
Updated:
Updated: mechanical data for TO-247 package
16-May-2014
3
The part numbers STFW12N120K5 has been moved to
a separate datasheet
Added: TO-247 long leads package
Modified: IAR, EAS, dv/dt values in Table 2: "Absolute
maximum ratings"
Modified: the entire typical values in Table 5: "Dynamic",
Table 6: "Switching times" and Table 7: "Source drain
diode"
Added: Section 2.1: "Electrical characteristics (curves)"
Minor text changes
08-Apr-2015
4
Updated title, silhouette and description in cover page.
Updated Table 4: "On/off states", Table 5: "Dynamic", Figure
9: "Static drain-source on-resistance" and Figure 10:
"Capacitance variations".
Minor text change.
STH12N120K5-2, STP12N120K5, STW12N120K5,
STWA12N120K5
DocID022133 Rev 4
21/21
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