4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features * 4.8 Volt Operation * +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 * 70% Collector Efficiency @ 900 MHz, Typ. * 9 dB Power Gain @ 900 MHz, Typ. * -31 dBc IMD3 @ Pout of 21 dBm per Tone, 900 MHz, Typ. * 50% Smaller than SOT-223 Package Pin Configuration COLLECTOR 4 Applications * Medium Power Driver Device for Cellular/PCS, ISM 900, WLAN * Output Power Device for ISM 900, Cordless, WLAN EMITTER 1 2 3 EMITTER BASE Description Agilent's AT-31625 is a low cost, NPN medium power silicon bipolar junction transistor housed in a miniature, MSOP-3 surface mount plastic package. The AT-31625 can be used as a driver device or an output device, depending on the specific application. The AT-31625 features +28 dBm CW output power when operated at 4.8 volts. Excellent gain and superior efficiency make the AT-31625 ideal for use in battery powered systems. The AT-31625 is fabricated with Agilent's 10 GHz FT Self-AlignedTransistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. 2 AT-31625 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2] Junction Temperature Storage Temperature Units V V V mA W C C Absolute Maximum[1] 1.4 16.0 9.5 320 1.0 150 -65 to 150 Thermal Resistance[3]: jc = 65C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Derate at 15.4 mW/C for Tc > 85C. Tc is defined to be the temperature of the collector pin 4, where the lead contacts the circuit board. 3. Using the liquid crystal technique, VCE = 4.8 V, Ic =50 mA, Tj =150C, 1-2 m "hot-spot" resolution. Electrical Specifications, TC = 25C Symbol Parameters and Test Conditions Units Min. Typ. Pin = +19 dBm dBm +27.0 +28.0 Pin = +19 dBm % 55 70 F1 = 899 MHz F2 = 901 MHz dBc Max. Freq. = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A, unless otherwise specified Pout Output Power [1] C Collector IMD3 3rd Order Intermodulation Distortion, 2 Tone Test, Pout each Tone = +21 dBm [1] Efficiency [1] Mismatch Tolerance, No Damage [1] BVEBO Emitter-Base Breakdown Voltage BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage hFE Forward Current Transfer Ratio ICEO Collector Leakage Current -31 Pout = +28 dBm any phase, 2 sec duration 7:1 IE = 0.2 mA, open collector V 1.4 IC = 1.0 mA, open emitter V 16.0 IC = 5.0 mA, open base V 9.5 VCE = 3 V, IC = 180 mA -- 80 VCEO = 5 V A Note: 1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A. 150 330 15 3 AT-31625 Typical Performance, TC = 25C Frequency = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A, unless otherwise specified. 27 80 25 70 60 23 Pout 21 50 40 19 c 17 30 15 20 13 2 4 6 28 26 24 22 20 18 3.0 V 3.6 V 4.8 V 16 14 10 0 8 10 12 14 16 18 20 22 11 12 6 8 10 INPUT POWER (dBm) 18 20 24 22 20 -20 -25 -30 IMD3 -35 TC = +85C TC = +25C TC = -40C 6 8 10 12 14 16 18 50 -40 -45 20 22 INPUT POWER (dBm) -50 IMD5 8 10 12 14 16 18 20 22 24 OUTPUT POWER/TONE (dBm) Figure 4. Output Power vs. Input Power Over Temperature. 3.0 V 3.6 V 4.8 V 40 14 16 18 20 22 Figure 3. Collector Efficiency vs. Input Power Over Bias Voltage. 30.5 -15 26 16 60 INPUT POWER (dBm) -10 18 70 30 12 22 source = 0.73 -156 load = 0.42 -179 -5 IMD (dBc) OUTPUT POWER (dBm) 16 source = 0.73 -156 load = 0.42 -179 80 31.0 0 28 14 14 Figure 2. Output Power vs. Input Power Over Bias Voltage. source = 0.73 -156 load = 0.42 -179 30 12 90 INPUT POWER (dBm) Figure 1. Output Power and Collector Efficiency vs. Input Power. 32 100 source = 0.73 -156 load = 0.42 -179 Figure 5. IMD3, IMD5 vs. Output Power Per Tone. 30.0 Pin = +19 dBm 100 source = 0.73 -156 load = 0.42 -179 c 90 80 29.5 70 29.0 60 28.5 50 Pout 28.0 40 27.5 30 27.0 20 26.5 10 0 1000 26.0 800 840 880 920 960 FREQUENCY (MHz) Figure 6. Output Power and Collector Efficiency vs. Frequency. Note: Tuned at 900 MHz, then Swept over Frequency. 0 RETURN LOSS (dB) -2 source = 0.73 -156 load = 0.42 -179 -4 -6 Output R.L. -8 -10 -12 Input R.L. -14 -16 -18 800 850 900 950 1000 FREQUENCY (MHz) Figure 7. Input and Output Return Loss vs. Frequency. COLLECTOR EFFICIENCY (%) 30 COLLECTOR EFFICIENCY (%) 32 90 OUTPUT POWER (dBm) OUTPUT POWER (dBm) 100 OUTPUT POWER (dBm) source = 0.73 -156 load = 0.42 -179 29 COLLECTOR EFFICIENCY (%) 31 4 AT-31625 Typical Large Signal Impedances VCE = 4.8 V, ICQ = 5 mA, Pout = +28.0 dBm source Freq. MHz Mag. Ang. 800 0.661 -149.0 825 0.679 -150.6 850 0.697 -152.4 875 0.712 -154.2 900 0.727 -155.8 925 0.740 -157.5 950 0.754 -159.0 975 0.767 -160.4 1000 0.777 -162.1 5.5 5.0 load 4.5 Ang. -171.3 -172.8 -174.6 -176.5 -179.0 179.3 177.2 174.9 172.5 Ccb (pF) Mag. 0.382 0.394 0.403 0.412 0.422 0.426 0.432 0.437 0.438 4.0 3.5 3.0 2.5 2.0 0 2 4 6 8 10 Vcb (V) Figure 8. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test). SPICE Model Parameters Die Model Packaged Model CPad Cbc C CPad CPad B Lb1 B 0.2 Lb2 Rb2 B E1 Die Area = 1.2 CPad = 0.43 pF Label BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR NR Value 150 299.9 9.9E-11 2.399 33.16 0.9935 1.6E-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7E-13 1.587 1.511 0.9886 Label TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE RB IRB RBM RE RC 0.2 Label Cbc Cbe Cce Lb1 Lb2 Rb2 Le1 Lc1 Value 0.009 pF 1.20 pF 0.48 pF 1.53 nH 0.045 nH 0.1 0.38 nH 0.47 nH C Cce E2 Value 1E-9 1.11 3.598E-15 3 1.4E-12 0.4776 0.2508 0.001 0.999 5.06E-12 1.148 0.5965 0.752 0 0.01 2.488 1.288 Lc1 E2 Cbe E1 C Die Le1 E 5 AT-31625 Typical Scattering Parameters, Common Emitter, ZO = 50 VCE = 3.0 V, Ic = 200 mA, Tc = 25C Freq. S11 GHz Mag. Ang. dB 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.72 0.77 0.79 0.79 0.79 0.79 0.79 0.79 0.79 0.79 0.79 0.79 0.79 -150 -166 179 169 161 156 153 146 140 133 126 120 114 30.7 25.3 17.5 11.6 8.2 6.7 5.9 4.1 2.7 1.7 0.7 0.0 -0.6 S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. 34.19 18.43 7.54 3.81 2.58 2.17 1.97 1.61 1.37 1.21 1.09 1.00 0.93 113 99 86 74 65 59 56 48 40 32 26 19 13 -34.0 -34.0 -28.0 -23.1 -20.9 -19.2 -18.4 -16.5 -14.9 -13.6 -12.8 -11.7 -11.1 0.02 0.02 0.04 0.07 0.09 0.11 0.12 0.15 0.18 0.21 0.23 0.26 0.28 40 42 57 64 63 62 61 58 54 49 45 41 36 0.56 0.52 0.51 0.51 0.52 0.52 0.52 0.53 0.54 0.54 0.55 0.55 0.56 -120 -148 -169 -178 177 175 174 170 167 164 160 156 152 36.39 19.69 8.06 4.07 2.75 2.31 2.10 1.71 1.46 1.28 1.16 1.05 0.98 114 100 86 75 65 60 56 48 40 33 26 19 13 -34.0 -34.0 -28.0 -24.4 -20.9 -19.2 -18.4 -16.5 -14.9 -14.0 -12.8 -11.7 -11.1 0.02 0.02 0.04 0.06 0.09 0.11 0.12 0.15 0.18 0.20 0.23 0.26 0.28 41 43 57 64 64 62 61 58 54 50 46 41 37 0.56 0.51 0.50 0.50 0.51 0.51 0.51 0.52 0.53 0.54 0.54 0.55 0.55 -117 -146 -168 -177 178 176 174 171 168 164 161 157 153 38.47 20.90 8.57 4.33 2.92 2.45 2.23 1.81 1.54 1.35 1.22 1.11 1.03 115 100 87 75 66 60 57 48 41 33 27 20 13 -34.0 -34.0 -28.0 -24.4 -20.9 -19.2 -18.4 -16.5 -14.9 -14.0 -12.8 -12.0 -11.1 0.02 0.02 0.04 0.06 0.09 0.11 0.12 0.15 0.18 0.20 0.23 0.25 0.28 41 43 57 64 64 62 61 58 54 50 46 41 37 0.56 0.50 0.49 0.49 0.49 0.50 0.50 0.51 0.51 0.52 0.53 0.54 0.54 -114 -144 -167 -176 179 176 175 172 168 165 162 158 154 VCE = 3.6 V, Ic = 200 mA, Tc = 25C 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.71 0.76 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 -148 -165 180 169 161 156 153 146 140 133 127 121 115 31.2 25.9 18.1 12.2 8.8 7.3 6.4 4.7 3.3 2.1 1.3 0.4 -0.2 VCE = 4.8 V, Ic = 200 mA, Tc = 25C 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.70 0.75 0.77 0.77 0.77 0.77 0.77 0.77 0.77 0.77 0.77 0.77 0.77 -145 -164 -180 169 161 157 154 147 140 134 127 121 115 31.7 26.4 18.7 12.7 9.3 7.8 7.0 5.2 3.8 2.6 1.7 0.9 0.3 Typical Performance 35 35 30 30 25 20 MAG 15 10 MSG |S21|2 GAIN (dB) GAIN (dB) 25 10 0 0 1.00 1.50 2.00 2.50 FREQUENCY (GHz) Figure 9. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 3.0 V, Ic = 200 mA. 25 15 5 0.25 0.75 MAG 20 5 -5 0.05 MSG 30 GAIN (dB) MSG 35 MSG -5 0.05 MSG |S21|2 MAG 20 15 10 MSG |S21|2 5 0.25 0.75 1.00 1.50 2.00 2.50 FREQUENCY (GHz) Figure 10. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 3.6 V, Ic = 200 mA. 0 0.05 0.25 0.75 1.00 1.50 2.00 2.50 FREQUENCY (GHz) Figure 11. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 4.8 V, Ic = 200 mA. 6 AT-31625 Typical Performance, TC = 25C Frequency = 1800 MHz, VCE = 4.8 V, ICQ = 15 mA, CW operation, Test Circuit B, unless otherwise specified. 60 25 50 20 40 Pout 15 30 c 10 20 5 10 0 0 4 8 12 16 20 -5 RETURN LOSS (dB) OUTPUT POWER (dBm) 30 0 70 source = 0.75 -135 load = 0.39 -179 COLLECTOR EFFICIENCY (%) 35 source = 0.75 -135 load = 0.39 -179 Output R.L. -10 -15 Input R.L. -20 0 24 -25 1700 INPUT POWER (dBm) 1750 1800 1850 Figure 12. Output Power and Collector Efficiency vs. Input Power. Figure 13. Input and Output Return Loss vs. Frequency. AT-31625 Typical Large Signal Impedances VCE = 4.8 V, ICQ = 15 mA, Pout = +25.0 dBm source Freq. MHz Mag. Ang. 1700 1725 1750 1775 1800 1825 1850 1875 1900 0.717 0.724 0.732 0.743 0.752 0.763 0.773 0.780 0.788 1900 FREQUENCY (MHz) -131.8 -132.6 -133.4 -134.3 -135.4 -136.3 -137.0 -137.8 -138.7 load Mag. Ang. 0.373 0.378 0.381 0.386 0.390 0.394 0.397 0.401 0.403 -174.3 -175.6 -176.7 -177.9 -179.1 179.5 178.4 177.1 175.7 7 Test Circuit A: Test Circuit Board Layout @ 900 MHz VBB VBB VCC R2 R1 T1 C8 C9 L2 L1 R4 R3 C2 VCC C5 C3 R5 9/96 C6 38.1 (1.5) C1 C7 C4 INPUT PA3 DEMO B-MFG0141 C10 OUTPUT C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 pF 100.0 nF 6.8 pF 100.0 nF 100.0 pF 2.7 pF 1.5 F 10.0 F 100.0 pF 2.2 750.0 2.2 10.0 10.0 MBT 2222A 18.0 H 18.0 H 76.2 (3.0) Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) CW Test VCE = 4.8 V ICQ = 5.0 mA Freq. = 900 MHz NOTE: Dimensions are shown in millimeters (inches). Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz VBB 2.2 750 B DC C E Transistor 2.2 10 18 H VCC CW Test VCE = 4.8 V ICQ = 5.0 mA Freq. = 900 MHz 100 nF 10 100 pF 100 pF 80 /4 @ 900 MHz 80 18 H 100 nF 100 pF 100 pF RF OUT 50 = 19.91 (.784) 6.8 pF = 5.38 (.212) 10 F /4 @ 900 MHz 50 RF IN 1.5 F 2.7 pF 8 Test Circuit B: Test Circuit Board Layout @ 1800 MHz VBB VBB VCC R2 R1 C8 C9 L2 L1 R4 R3 VCC C5 C3 R5 9/96 T1 38.1 (1.5) C2 C7 C1 C4 INPUT C10 C6 PA3 DEMO B-MFG0141 OUTPUT C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 pF 100.0 nF 3.0 pF 100.0 nF 1.4 pF 100.0 pF 1.5 F 10.0 F 100.0 pF 2.2 350.0 2.2 10.0 10.0 MBT 2222A 18.0 H 18.0 H 76.2 (3.0) Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) CW Test VCE = 4.8 V ICQ = 15.0 mA Freq. = 1800 MHz NOTE: Dimensions are shown in millimeters (inches). Test Circuit B: Test Circuit Schematic Diagram @ 1800 MHz VBB 2.2 350 B DC C E Transistor 2.2 10 18 H VCC CW Test VCE = 4.8 V ICQ = 15.0 mA Freq. = 1800 MHz 100 nF 10 100 pF 100 pF 80 /4 @ 1800 MHz 80 18 H 100 nF 100 pF RF OUT 50 = 10.49 (.413) RF IN 3.0 pF = 0.89 (.035) 10 F /4 @ 1800 MHz 50 100 pF 1.5 F 1.4 pF 9 Part Number Ordering Information Part Number No. of Devices Container AT-31625-TR1 1000 7" Reel AT-31625-BLK 25 Carrier Tape Package Dimensions MSOP-3 Surface Mount Plastic Package 0.18/0.25 (.007/.010) 3.12/3.23 (.123/.127) SEE DETAIL A R 0.25 (.010) MAX 4.62/5.03 (.182/.198) 0.76 REF (.030) 0.51 (.020) DIA X 0.15 (.006) DEEP REF PIN 1 0.76 REF (.030) 2.64/2.82 (.104/.111) 1.91 (.075) BASIC 4.80/5.00 (.189/.197) 1.09/1.42 (.043/.056) 1.22/1.60 (.048/.063) TOP VIEW SEATING PLANE 0.58/0.69 (.023/.027) LEAD TIP COPLANARITY SIDE VIEW R 0.20 (.008) MIN R 0.20/0.33 (.008/.013) 0.25 (.010) GAUGE PLANE 0.10/0.25 (.004/.010) 0.41/0.86 (.016/.034) SEATING PLANE 0 MIN/8 MAX DETAIL A NOTE: DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 0.10 (.004) 10 Tape Dimensions and Product Orientation for Package MSOP-3 REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE 2.00 0.05 (.079 .002) 1.75 (.069) 1.5 (.059) 0.30 0.05 (.012 .002) 4.0 (.157) 12.0 0.3 5.2 (.472 .012) (.205) 5.50 0.05 (.217 .002) R 0.5 (.020) TYP 8.0 (.315) 1.5 (.059) NOTES: 1. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 2. TOLERANCES: .X 0.1 (.XXX .004) 5.2 (.205) R 0.3 (.012) 1.75 (.069) www.semiconductor.agilent.com Data subject to change. Copyright (c) 1999 Agilent Technologies 5965-5911E (11/99)