JGD 3EZ3.9D5 THRU 3EZ200D5 eb 3W SILICON ZENER DIODE - VOLTAGE RANG 3.9 to 200 Volts FEATURES DO-41 * Zener voltage 3.9V to 200V (O * High surge current rating 78 = ara i * 3 Watts dissipation in a normaily 1 watt package | MECHANICAL CHARACTERISTICS paisa ost | | x CASE:Molded encapsulation, axial lead package. iyi * FINISH: Corrosion resistant.Leads are solderable. | | * THERMAL RESISTANCE: 45C/Watt junction to lead at 0.375 04.205 sya inches from body . x POLARITY: Banded end is cathode. | WEIGHT:0.4 grams(Typicai) . ht ea. Junction and Storage Temperature: 65Cto + 175C DC Power Dissipation:3 Watt . . : in inches Power Derating: 20mW/C above 25C All dimensions in me Forward Voltage @ 200mA:1.2 Volts Go x ELECTRICAL CHARCTERISTICS @ 25C MAXIMUM NOMINAL MAXIMUM MAXIMUM : ae TYPE VOLTAGE IMPEDANCE MAAIMIUM EEESE| ZENER ource NOTE 1 Suffix 1 indicates + NUMBER (Note 2} (Note 3) CURRENT (Note 4) 1% tolerance. Suffix 2 indi- lote ae iZ Zr e Zi aa OIZK Re VB ia ig IBGE cates + 2% tolerance cute 3 L mA S mA indi JEZSSDB | 3.9 192 4.5 400 7.0 5 7.0 630 44 indicates + 3% tolerance. 3EZ4.305| 4.3 174 4.5 400 1.0 30 1.0 520 at Suffix 4 indicates + 4% toler- 3 I Bi 17 $3 & 18 2 18 % 23 ance. Suffix 5 indicates + 5% 3EZ.2D5| 6.2 121 15 700 10 5.0 3.0 435 3.1 tolerance. Suffix 10 indicates SEZ5.8D5) 6.8 vio 2.0 700 1.0 3.0 40 2 2% +10% ,no suffix indicates + . . : . 5. . 3E232D5 | 83 $ 33 & b8 5:0 3:0 0 aad 20%. 3E.105| 9.1 @2 25 700 05 3.0 7.0 297 2.2 eel ele |B se lasi a | B | fg SB 3 45 8 0-2 1:0 a 24 196 NOTE? Vz measured by ap- 3EZ13) 1 4.5 700 25 0.5 : : m ms prior 3Ez1406 | 14 53 5.0 700 0.25 0.5 10.6 193 1.43 plying iz st p ml e | 8) ee | B | be | bk as] 18 | | 10 read oe oo 3EZ1706 7 44 6.0 750 0.25 0.5 13 180 1-18 tacts are located 3/8 to 1/2 3EZ18 18 42 6.0 750 0.25 05 13.7 : insi . 3g 19 40 7.0 750 0.25 05 144 442 1.05 from inside edge of mount 3EZ20I 20 3? 7.0 700 0.25 0.5 15.2 13 1.0 ing clips. Ambient tempera- 3Ez2D5 | 22 34 8.0 750 0.25 0.5 16.7 123 0.91 3Ez4p | 24 31 9.0 750 0.25 05 18.2 112 0.83 ture, Ta = 265T (+ 8C/- 3EZ7D5 | 27 2B 10 750 0.25 0.5 20.6 +00 0.74 3EZeDS | 2B 7 12 z 0.25 015 2 6 O71 2C). 3EZ005 | ww B 16 1000 0.25 0.5 2.5 90 0.67 3EZ33D5 3 23 20 1000 0.25 0.5 25.1 82 0.61 3EZ36D5 | 36 21 2 1000 0.25 0.5 274 B 0.56 NOTE 3 3EZ30D5 | 39 19 2B 1000 0.25 0.5 B71 0.51 ee eT] | BR] RET Bl] & | EB || Dynamic Impedance, 22. 3EZ51D5 51 15 45 1500 0.25 0.5 8.8 8 0.39 measured by superimposing : . 42. . SER 8 8 Ea 3003 8.38 88 | 4 4 4 83 | ac RMS at 60 He on Ipc 3EZ68I 1 70 2000 0. 0.5 81. : = 3Ez7eDe | 7 40 85 2000 0.25 05 56 % 0.27 where | ac RMS = 10% Ipc. a ee 838 3EZI0005 | 100 25 160 3000 0.25 0.5 as 27 0.20 NOTE 4 Maximum surge cur- 1 . 225 4000 . 0.5 : . . . a Big | | rents @ maximum peak nor 3EZ140D6 | 140 5.3 475 5000 0.25 0.5 106.4 19 0.14 recurrent reverse surge 3EZ150D5 150 5.0 550 6000 0.25 0.5 114 18 0.13 with a maximum pulse width 3EZ160D5 | 160 a7 625 6500 0.25 0.5 121.6 17 0.12 one 3EZ170D6 | 170 44 650 7000 0.25 0.5 130.4 16 0.12 of 8.3 milliseconds. 3EZI80D5 | 180 4:2 700 7000 0.25 0.5 136.8 15 0.11 3EZI90D5 | 190 4.0 800 8000 0.25 0.5 144.8 4 0.10 3EZ200D5 | __ 200 37 875 8000 0.25 05 152 13 0.40 x JEDEC Registered Data JINAN GUDE ELECTRONIC DEVICE CO., LTD.RATING AND CHARACTERISTIC CURVES (3EZ3.9D5 THRU 3EZ200D5 ) | 3EZ | 3. e tols| \ TOLERANCE DEVICE 3 WATT MOLDED ZENER NOMINAL DIODE ZENER VOLTAGE FIGURE 1 5000 4000 Pg.MAXIMUM POWER DISSIPATION (mW) re) @ 3 3 3 3 eS 3 = oS Q Oo LEAD TEMPERATURE -T,('C )3/8' FROM BODY FIGURE 2 POWER DERATING CURVE JINAN GUDE ELECTRONIC DEVICE CO., LTD.