1
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=400V
ID=2.4A
VGS=10V
IF=2.4A VGS=0V Tch=25°C
IF=2.4A VGS=0V
-di/dt=100A/µs Tch=25°C
TO-220AB
VGS=-30V
Tch 150°C
*1
*2
VDS 800V
*3
Ta=25°C
Tc=25°C
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 800
VDSX 800
Continuous drain current ID2.4
Pulsed drain current ID(puls] ±9.6
Gate-source voltage VGS ±30
Non-Repetitive IAS 2.4
Maximum avalanche current
Non-Repetitive EAS 314.7
Maximum avalanche energy
Repetitive EAR 7.5 mJ
Maximum avalanche energy
Maximum Drain-Source dV/dt dVDS/dt 40
Peak diode recovery dV/dt dV/dt 5
Max. power dissipation PD2.02
75
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3784-01
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=800V VGS=0V
VDS=640V VGS=0V
VGS=±30V
ID=1.2A VGS=10V
ID=1.2A VDS=25V
VCC=600V ID=1.2A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 1.667
62.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
V
V
A
A
V
A
mJ
kV/s
kV/µs
W
°C
°C
800
3.0 5.0
25
250
100
4.8 6.3
12
260 400
38 60
23
18 27
711
30 45
25 38
11.5 18.0
5.5 9.0
1.7 2.6
0.90 1.50
1
3.3
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
200311
<
=
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=
*1 Starting Tch=25°C,IAS=1A,L=577mH,Vcc=80V,RG=50Ω
EAS limited by maximum channel temperature and avalanche current.
See to the ‘Avalanche Energy’ graph.
*2 Repetitive ratimg : Pulse width limited maximum channel temperature.
See to the ‘Transient Thermal impedance’ graph.
*3 IF -ID, -di/dt=50A/µs, VCC BVDSS, Tch 150°C
<
=<
=
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Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
2
Characteristics
2SK3784-01 FUJI POWER MOSFET
0 255075100125150
0
10
20
30
40
50
60
70
80
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0 4 8 121620242832
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0 20V
10V
8V
6.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristi cs
ID=f(VDS):80 µs pulse test,Tch=25°C
VGS=5.5V
012345678910
0.01
0.1
1
ID[A]
VGS[V]
Typical Transfer Characteri stic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
0.01 0.1 1 10
0.1
1
10
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
10V
20V
8V
6.5V
6.0V
VGS=5.5V
-50 -25 0 25 50 75 100 125 150
0
2
4
6
8
10
12
14
16
RDS(on) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=1.2A,VGS=10V
3
2SK3784-01 FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Thr eshold V oltag e vs . Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
VGS(th) [ V]
Tch [°C]
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=2.4A,Tch=25°C
VGS [V]
640V
400V
Vcc= 160V
100101102103
100
101
102
103
C [pF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.0 0.5 1.0 1.5
0.1
1
10
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
10-1 100101
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
IAS=1.0A
IAS=1.5A
IAS=2.4A
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=80V,I(AV)<=2.4A
4
2SK3784-01 FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
Single Pu ls e
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=80V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth( ch-c) [°C/W]
t [sec]
