FDS6574A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. * 16 A, 20 V. RDS(ON) = 6 m @ VGS = 4.5 V RDS(ON) = 7 m @ VGS = 2.5 V RDS(ON) = 9 m @ VGS = 1.8 V * Low gate charge Applications * High performance trench technology for extremely low RDS(ON) * DC/DC converter * High power and current handling capability D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage 8 V ID Drain Current 16 A - Continuous (Note 1a) - Pulsed Power Dissipation for Single Operation PD 80 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG W 1.0 -55 to +175 C (Note 1a) 50 C/W (Note 1) 25 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6574A FDS6574A 13'' 12mm 2500 units FDS6574A FDS6574A_NL (Note 3) 13'' 12mm 2500 units 2005 Fairchild Semiconductor Corporation FDS6574A Rev B1(W) FDS6574A April 2005 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 A BVDSS Drain-Source Breakdown Voltage VGS = 0 V, BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 0 V 1 IGSSF Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -8 V VDS = 0 V -100 nA ID = 250 A 1.5 V On Characteristics 20 V 10 mV/C A (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 A, Referenced to 25C 0.4 0.6 -2.7 4 4.4 5 5.3 mV/C ID(on) On-State Drain Current VGS = 4.5 V, ID = 16 A VGS = 2.5 V, ID = 15 A VGS = 1.8 V, ID = 13 A VGS = 4.5 V, ID = 16 A,TJ=125C VGS = 4.5 V, VDS = 5 V 6 7 9 9 gFS Forward Transconductance VDS = 5 V, ID = 16 A 115 S VDS = 10V, f = 1.0 MHz V GS = 0 V, 7657 pF 1432 pF 775 pF 40 m A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 19.5 35 ns 22 36 ns Turn-Off Delay Time 173 277 ns tf Turn-Off Fall Time 82 131 ns Qg Total Gate Charge 75 105 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 10 V, VGS = 4.5 V ID = 16 A, 9 nC 17 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage (Note 2) 0.56 2.1 A 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1in2 pad of 2 oz copper b) 105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. FDS6574A_NL is a lead free product. The FDS6574A_NL marking will appear on the reel label. FDS6574A Rev B1(W) FDS6574A Electrical Characteristics FDS6574A Typical Characteristics 2 VGS = 4.5V 2.5V ID, DRAIN CURRENT (A) 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 100 80 1.8V 1.5V 60 40 20 0 1.8 VGS = 1.5V 1.6 1.4 1.8V 1.2 2.5V 3.0V 0.5 1 1.5 2 0 20 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 80 100 ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.012 1.6 ID = 16A VGS = 4.5V ID = 8A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 0.8 0 1.4 1.2 1 0.8 0.6 0.01 0.008 TA = 125oC 0.006 0.004 TA = 25oC 0.002 -50 -25 0 25 50 75 100 125 150 175 1 2 o 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 90 100 25oC IS, REVERSE DRAIN CURRENT (A) TA = -55oC VDS = 5V 75 ID, DRAIN CURRENT (A) 3.5V 1 125oC 60 45 30 15 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 0.8 1.1 1.4 1.7 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6574A Rev B1(W) FDS6574A Typical Characteristics 10000 VDS = 5V ID = 16 A 10V f = 1 MHz VGS = 0 V CISS 4 8000 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 15V 3 2 6000 4000 COSS 1 2000 0 0 CRSS 0 15 30 45 60 75 90 0 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 10 20 50 P(pk), PEAK TRANSIENT POWER (W) 100 100s RDS(ON) LIMIT 10 1 DC 1ms 10ms 100ms 1s 10s VGS = 4.5V SINGLE PULSE RJA = 125oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 SINGLE PULSE RJA = 125C/W TA = 25C 40 30 20 10 0 0.001 100 0.01 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 1000 ID, DRAIN CURRENT (A) 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R JA(t) = r(t) *R JA 0.2 0.1 o R JA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 TJ - T A = P * R JA(t) Duty Cycle, D = t 1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6574A Rev B1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15