500V / 600V High Voltage 3-phase Motor Driver ICs SIM6800M Series Data Sheet Description Package The SIM6800M series are high voltage 3-phase motor driver ICs in which transistors, a pre-driver IC (MIC), and bootstrap circuits (diodes and resistors) are highly integrated. These products can run on a 3-shunt current detection system and optimally control the inverter systems of small- to medium-capacity motors that require universal input standards. DIP40 Mold Dimensions: 36.0 mm x 14.8 mm x 4.0 mm 40 ns : 21 1 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Features Built-in Bootstrap Diodes with Current Limiting Resistors (60 ) CMOS-compatible Input (3.3 V or 5 V) Bare Lead Frame: Pb-free (RoHS Compliant) Isolation Voltage: 1500 V (for 1 min) UL-recognized Component (File No.: E118037) (SIM6880M UL Recognition Pending) Fault Signal Output at Protection Activation (FO Pin) High-side Shutdown Signal Input (SD Pin) Protections Include: Overcurrent Limit (OCL): Auto-restart Overcurrent Protection (OCP): Auto-restart Undervoltage Lockout for Power Supply High-side (UVLO_VB): Auto-restart Low-side (UVLO_VCC): Auto-restart Thermal Shutdown (TSD): Auto-restart VB1A VCC1 17 21 30 VDSS/VCES IO 500 V 2.5 A 3.0 A 5.0 A 5.0 A 16 15 14 13 12 OCL LIN3 LIN2 LIN1 COM2 VCC2 FO OCP 10 9 8 7 6 5 4 3 R N LIN3 LIN2 Controller LIN1 5V RFO Fault CFO RO IGBT with FRD, low switching dissipation IGBT with FRD, low switching dissipation IGBT with FRD, low noise Part Number SIM6811M SIM6812M SIM6813M SIM6880M SIM6822M SIM6827M Applications CBOOT3 COM1 HIN3 HIN2 HIN1 SD ot HIN1 Not to scale CBOOT2 23 VB3 HIN2 Power MOSFET 3.0 A CBOOT1 HIN3 Feature 2.0 A VB1B 20 VB2 Leadform 2971 Selection Guide 600 V Typical Application (SIM681xM) VCC 20 LS1 11 LS2 2 LS3A 1 VDC 28VBB Refrigerator Compressor Motor Fan Motor and Pump Motor for Washer and Dryer Fan Motor for Air Conditioner, Air Purifier, and Electric Fan 31 U 19 V MIC 26 V1 For motor drives such as: M 35 V2 W1 24 37 W2 33 LS2 40 LS3B CS CDC RS CO GND SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 1 SIM6800M Series Contents Description ------------------------------------------------------------------------------------------------------ 1 Contents --------------------------------------------------------------------------------------------------------- 2 1. Absolute Maximum Ratings----------------------------------------------------------------------------- 4 2. Recommended Operating Conditions ----------------------------------------------------------------- 5 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g ns : 3. Electrical Characteristics -------------------------------------------------------------------------------- 6 3.1 Characteristics of Control Parts------------------------------------------------------------------ 6 3.2 Bootstrap Diode Characteristics ----------------------------------------------------------------- 7 3.3 Thermal Resistance Characteristics ------------------------------------------------------------- 7 3.4 Transistor Characteristics ------------------------------------------------------------------------- 8 3.4.1 SIM6811M -------------------------------------------------------------------------------------- 9 3.4.2 SIM6812M -------------------------------------------------------------------------------------- 9 3.4.3 SIM6813M ------------------------------------------------------------------------------------ 10 3.4.4 SIM6880M ------------------------------------------------------------------------------------ 10 3.4.5 SIM6822M ------------------------------------------------------------------------------------ 11 3.4.6 SIM6827M ------------------------------------------------------------------------------------ 11 4. Mechanical Characteristics --------------------------------------------------------------------------- 12 5. Insulation Distance -------------------------------------------------------------------------------------- 12 6. Truth Table ----------------------------------------------------------------------------------------------- 13 7. Block Diagrams ------------------------------------------------------------------------------------------ 14 8. Pin Configuration Definitions------------------------------------------------------------------------- 15 9. Typical Applications ------------------------------------------------------------------------------------ 16 10. Physical Dimensions ------------------------------------------------------------------------------------ 17 11. Marking Diagram --------------------------------------------------------------------------------------- 18 19 19 19 19 19 20 20 21 21 22 22 22 22 23 23 23 23 24 25 26 13. Design Notes ---------------------------------------------------------------------------------------------13.1 PCB Pattern Layout -----------------------------------------------------------------------------13.2 Considerations in Heatsink Mounting -------------------------------------------------------13.3 Considerations in IC Characteristics Measurement --------------------------------------- 26 26 26 27 N ot R 12. Functional Descriptions -------------------------------------------------------------------------------12.1 Turning On and Off the IC ---------------------------------------------------------------------12.2 Pin Descriptions ----------------------------------------------------------------------------------12.2.1 U, V, V1, V2, W1, and W2 ----------------------------------------------------------------12.2.2 VB1A, VB1B, VB2, and VB3 -------------------------------------------------------------12.2.3 VCC1 and VCC2 ---------------------------------------------------------------------------12.2.4 COM1 and COM2--------------------------------------------------------------------------12.2.5 HIN1, HIN2, and HIN3; LIN1, LIN2, and LIN3 -------------------------------------12.2.6 VBB -------------------------------------------------------------------------------------------12.2.7 LS1, LS2, LS3A, and LS3B ---------------------------------------------------------------12.2.8 OCP and OCL ------------------------------------------------------------------------------12.2.9 SD----------------------------------------------------------------------------------------------12.2.10 FO ---------------------------------------------------------------------------------------------12.3 Protection Functions -----------------------------------------------------------------------------12.3.1 Fault Signal Output ------------------------------------------------------------------------12.3.2 Shutdown Signal Input --------------------------------------------------------------------12.3.3 Undervoltage Lockout for Power Supply (UVLO) ----------------------------------12.3.4 Overcurrent Limit (OCL) ----------------------------------------------------------------12.3.5 Overcurrent Protection (OCP) ----------------------------------------------------------12.3.6 Thermal Shutdown (TSD) ----------------------------------------------------------------- 14. Calculating Power Losses and Estimating Junction Temperatures --------------------------- 28 14.1 IGBT ------------------------------------------------------------------------------------------------- 28 SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 2 SIM6800M Series 28 28 28 29 29 29 29 30 15. Performance Curves -----------------------------------------------------------------------------------15.1 Transient Thermal Resistance Curves -------------------------------------------------------15.2 Performance Curves of Control Parts--------------------------------------------------------15.3 Performance Curves of Output Parts --------------------------------------------------------15.3.1 Output Transistor Performance Curves -----------------------------------------------15.3.2 Switching Losses ----------------------------------------------------------------------------15.4 Allowable Effective Current Curves ----------------------------------------------------------15.4.1 SIM6811M -----------------------------------------------------------------------------------15.4.2 SIM6812M -----------------------------------------------------------------------------------15.4.3 SIM6813M -----------------------------------------------------------------------------------15.4.4 SIM6880M -----------------------------------------------------------------------------------15.4.5 SIM6822M -----------------------------------------------------------------------------------15.4.6 SIM6827M -----------------------------------------------------------------------------------15.5 Short Circuit SOAs (Safe Operating Areas) ------------------------------------------------- 31 31 32 37 37 39 42 42 43 44 45 46 47 48 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g ns : 14.1.1 IGBT Steady-state Loss, PON -------------------------------------------------------------14.1.2 IGBT Switching Loss, PSW ----------------------------------------------------------------14.1.3 Estimating Junction Temperature of IGBT -------------------------------------------14.2 Power MOSFET ----------------------------------------------------------------------------------14.2.1 Power MOSFET Steady-state Loss, PRON----------------------------------------------14.2.2 Power MOSFET Switching Loss, PSW --------------------------------------------------14.2.3 Body Diode Steady-state Loss, PSD ------------------------------------------------------14.2.4 Estimating Junction Temperature of Power MOSFET ------------------------------ 16. Pattern Layout Example ------------------------------------------------------------------------------- 49 17. Typical Motor Driver Application ------------------------------------------------------------------- 51 N ot R Important Notes ---------------------------------------------------------------------------------------------- 52 SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 3 SIM6800M Series 1. Absolute Maximum Ratings VDSS VCC = 15 V, ID = 1 A, VIN = 0 V VCC = 15 V, IC = 1 mA, VIN = 0 V 500 SIM681xM ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g IGBT / Power MOSFET Breakdown Voltage ns : Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming out of the IC (sourcing) is negative current (-). Unless specifically noted, TA = 25 C, COM1 = COM2 = COM. Parameter Symbol Conditions Rating Unit Remarks 400 SIM681xM VBB-LSx Main Supply Voltage (DC) VDC V SIM682xM 450 SIM6880M 450 SIM681xM VBB-LSx Main Power Voltage (Surge) VDC(SURGE) V SIM682xM 500 SIM6880M VCES VCC Logic Supply Voltage VBS V 600 20 VCCx-COM VB1B-U, VB2-V, VB3-W1 20 V 2 2.5 Output Current (1) IO TC = 25 C, TJ < 150 C 3 A 5 Output Current (Pulse) IOP 3 3.75 TC = 25 C, VCC = 15 V, PW 1 ms, single pulse 4.5 A 7.5 Input Voltage N ot R FO Pin Voltage OCP Pin Voltage SD Pin Voltage Operating Case Temperature(2) Junction Temperature(3) Storage Temperature Isolation Voltage( 4) HINx-COM, LINx-COM FO-COM - 0.5 to 7 V -0.5 to 7 -10 to 5 -0.5 to 7 V V V TC(OP) -30 to 100 C TJ TSTG 150 -40 to 150 C C 1500 V VIN VFO VOCP VSD VISO(RMS) OCP-COM SD-COM SIM682xM SIM6880M Between surface of the case and each pin; AC, 60 Hz, 1 min SIM6811M SIM6812M SIM6813M SIM6880M SIM6822M SIM6827M SIM6811M SIM6812M SIM6813M SIM6880M SIM6822M SIM6827M (1) Should be derated depending on an actual case temperature. See Section 15.4. Refers to a case temperature measured during IC operation. (3) Refers to the junction temperature of each chip built in the IC, including the controller IC (MIC), transistors, and fast recovery diodes. (4) Refers to voltage conditions to be applied between the case and all pins. All pins have to be shorted. (2) SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 4 SIM6800M Series 2. Recommended Operating Conditions Unless specifically noted, COM1 = COM2 = COM. Parameter Symbol Conditions Typ. Max. Unit VDC VBB-COM -- 300 400 V VCC VCCx-COM VB1B-U, VB2-V, VB3-W1 13.5 15.0 16.5 V 13.5 -- 16.5 V VIN 0 -- 5.5 V tIN(MIN)ON 0.5 -- -- s tIN(MIN)OFF 0.5 -- -- s Dead Time of Input Signal tDEAD 1.5 -- -- s FO Pin Pull-up Resistor RFO 3.3 -- 10 k FO Pin Pull-up Voltage VFO 3.0 -- 5.5 V FO Pin Noise Filter Capacitor CFO 0.001 -- 0.01 F CBOOT 1 -- 220 F IP 3 A 390 -- -- IP 3.75 A 270 -- -- Logic Supply Voltage Input Voltage (HINx, LINx, OCP, SD, FO) ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Minimum Input Pulse Width Bootstrap Capacitor Shunt Resistor VBS RC Filter Resistor RC Filter Capacitor PWM Carrier Frequency RO IP 4.5 A 270 -- -- IP 7.5 A 150 -- -- -- -- 100 1000 -- 2200 m SIM6812M SIM6813M SIM6880M SIM6822M SIM6827M pF CO SIM6811M 1000 -- 10000 fC -- -- 20 kHz TC(OP) -- -- 100 C SIM6822M SIM6827M SIM6880M SIM6811M SIM6812M SIM6813M N ot R Operating Case Temperature RS Remarks ns : Main Supply Voltage Min. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 5 SIM6800M Series 3. Electrical Characteristics Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming out of the IC (sourcing) is negative current (-). Unless specifically noted, TA = 25 C, VCC = 15 V, COM1 = COM2 = COM. 3.1 Characteristics of Control Parts Parameter Symbol Conditions Min. Typ. Max. Unit Remarks VCC(ON) VCCx-COM 10.5 11.5 12.5 V VBS(ON) VB1B-U, VB2-V, VB3-W1 9.5 10.5 11.5 V VCC(OFF) VCCx-COM 10.0 11.0 12.0 V 9.0 10.0 11.0 V -- 3.2 4.5 mA -- 140 400 A VIH -- 2.0 2.5 V VIL 1.0 1.5 -- V ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Logic Operation Start Voltage ns : Power Supply Operation Logic Operation Stop Voltage VBS(OFF) ICC Logic Supply Current IBS Input Signal High Level Input Threshold Voltage VB1B-U, VB2-V, VB3-W1 VCC1 = VCC2, VCC pin current in 3-phase operation VB1B-U or VB2-V or VB3-W1; HINx = 5 V; VBx pin current in 1-phase operation (HINx, LINx, SD, FO) Low Level Input Threshold Voltage (HINx, LINx, SD, FO) High Level Input Current (HINx, LINx) Low Level Input Current (HINx, LINx) ot R Fault Signal Output FO Pin Voltage at Fault Signal Output FO Pin Voltage in Normal Operation N Protection OCL Pin Output Voltage (L) OCL Pin Output Voltage (H) Current Limit Reference Voltage OCP Threshold Voltage OCP Hold Time OCP Blanking Time Current Limit Blanking Time IIH VIN = 5 V -- 230 500 A IIL VIN = 0 V -- -- 2 A VFOL VFO = 5 V, RFO = 10 k 0 -- 0.5 V VFOH VFO = 5 V, RFO = 10 k 4.8 -- -- V VOCL(L) 0 -- 0.5 V VOCL(H) 4.5 -- 5.5 V VLIM 0.6175 0.6500 0.6825 V VTRIP 0.9 1.0 1.1 V tP 20 25 -- s tBK(OCP) -- 2 -- s tBK(OCL) -- 2 -- s SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 6 SIM6800M Series Parameter TSD Operating Temperature TSD Releasing Temperature Min. Typ. Max. Unit TDH 135 150 -- C TDL 105 120 -- C Min. Typ. Max. Unit Remarks Bootstrap Diode Characteristics Symbol Conditions Remarks ILBD VR = 500 V -- -- 10 A VFB IFB = 0.15 A -- 1.0 1.3 V 45 60 75 Min. Typ. Max. Unit Remarks RJ-C Conditions All power MOSFETs operating -- -- 3.6 C/W SIM681xM R(J- All IGBTs operating -- -- 3.6 C/W -- -- 4.2 C/W -- -- 25 C/W ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Parameter Bootstrap Diode Leakage Current Bootstrap Diode Forward Voltage Bootstrap Diode Series Resistor 3.3 Conditions ns : 3.2 Symbol RBOOT Thermal Resistance Characteristics Parameter Junction-to-Case Thermal Resistance( 1) Symbol (2) C)Q R(J-C)F(3) RJ-A Junction-to-Ambient Thermal Resistance (1) All freewheeling diodes operating All power MOSFETs operating R(J-A)Q All IGBTs operating -- -- 25 C/W R(J-A)F All freewheeling diodes operating -- -- 29 C/W SIM682xM SIM6880M SIM682xM SIM6880M SIM681xM SIM682xM SIM6880M SIM682xM SIM6880M Refers to a case temperature at the measurement point described in Figure 3-1, below. Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient thermal characteristics, see Section 15.1. (3) Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case. N ot R (2) SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 7 SIM6800M Series Measurement point 21 ns : 40 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g 5 mm 1 20 Figure 3-1. 3.4 Case Temperature Measurement Point Transistor Characteristics Figure 3-2 provides the definitions of switching characteristics described in this and the following sections. HINx/ LINx 0 trr ton td(on) tr N ot R ID / IC toff td(off) tf 90% 0 10% VDS / VCE 0 Figure 3-2. Switching Characteristics Definitions SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 8 SIM6800M Series SIM6811M Parameter Drain-to-Source Leakage Current Drain-to-Source On Resistance Source-to-Drain Diode Forward Voltage High-side Switching Source-to-Drain Diode Reverse Recovery Time Turn-on Delay Time Fall Time Max. Unit VDS = 500 V, VIN = 0 V -- -- 100 A RDS(ON) ID = 1.0 A, VIN = 5 V -- 3.2 4.0 VSD ISD =1.0 A, VIN = 0 V -- 1.0 1.5 V -- 150 -- ns -- 770 -- ns -- 70 -- trr td(on) VDC = 300 V, IC = 1.0 A, inductive load, VIN = 05 V or 50 V, TJ = 25 C td(off) tf Low-side Switching Source-to-Drain Diode Reverse Recovery Time Turn-on Delay Time Rise Time trr td(on) tr Turn-off Delay Time Fall Time td(off) VDC = 300 V, IC = 1.0 A, inductive load, VIN = 05 V or 50 V, TJ = 25 C tf ns -- 690 -- ns -- 30 -- ns -- 150 -- ns -- 690 -- ns -- 90 -- ns -- 650 -- ns -- 50 -- ns Min. Typ. Max. Unit SIM6812M Parameter Drain-to-Source Leakage Current Drain-to-Source On Resistance Source-to-Drain Diode Forward Voltage ot R High-side Switching Source-to-Drain Diode Reverse Recovery Time Turn-on Delay Time Rise Time Typ. tr Turn-off Delay Time 3.4.2 Min. IDSS Conditions ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Rise Time Symbol ns : 3.4.1 Conditions ICES VDS = 500 V, VIN = 0 V -- -- 100 A VCE(SAT) ID = 1.25 A, VIN = 5 V -- 2.0 2.4 VF ISD =1.25 A, VIN = 0 V -- 1.0 1.5 V -- 140 -- ns -- 910 -- ns -- 100 -- ns -- 700 -- ns trr td(on) tr td(off) VDC = 300 V, IC = 1.25 A, inductive load, VIN = 05 V or 50 V, TJ = 25 C N Turn-off Delay Time Symbol Fall Time tf -- 40 -- ns Low-side Switching Source-to-Drain Diode Reverse Recovery Time Turn-on Delay Time trr -- 155 -- ns -- 875 -- ns -- 110 -- ns -- 775 -- ns -- 35 -- ns Rise Time Turn-off Delay Time Fall Time td(on) tr td(off) VDC = 300 V, IC = 1.25 A, inductive load, VIN = 05 V or 50 V, TJ = 25 C tf SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 9 SIM6800M Series SIM6813M Parameter Drain-to-Source Leakage Current Drain-to-Source On Resistance Source-to-Drain Diode Forward Voltage High-side Switching Source-to-Drain Diode Reverse Recovery Time Turn-on Delay Time Typ. Max. Unit VDS = 500 V, VIN = 0 V -- -- 100 A RDS(ON) ID = 1.5 A, VIN = 5 V -- 1.4 1.7 VSD ISD =1.5 A, VIN = 0 V -- 1.0 1.5 V -- 170 -- ns -- 820 -- ns -- 100 -- ns -- 810 -- ns tf -- 50 -- ns trr -- 180 -- ns -- 760 -- ns -- 130 -- ns -- 750 -- ns -- 50 -- ns Min. Typ. Max. Unit VCE = 600 V, VIN = 0 V -- -- 1 mA VCE(SAT) IC = 3.0 A, VIN = 5 V -- 1.85 2.30 V VF IF = 3.0 A, VIN = 0 V -- 2.0 2.4 V -- 100 -- ns -- 880 -- ns -- 120 -- ns -- 740 -- ns tf -- 210 -- ns trr -- 100 -- ns -- 820 -- ns -- 140 -- ns -- 660 -- ns -- 200 -- ns IDSS Fall Time Low-side Switching Source-to-Drain Diode Reverse Recovery Time Turn-on Delay Time Rise Time td(on) td(off) td(on) tr Turn-off Delay Time Fall Time Conditions trr tr Turn-off Delay Time 3.4.4 Symbol VDC = 300 V, IC = 1.5 A, inductive load, VIN = 05 V or 50 V, TJ = 25 C ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Rise Time Min. ns : 3.4.3 td(off) VDC = 300 V, IC = 1.5 A, inductive load, VIN = 05 V or 50 V, TJ = 25 C tf SIM6880M Parameter Collector-to-Emitter Leakage Current Collector-to-Emitter Saturation Voltage Diode Forward Voltage Symbol ICES Conditions High-side Switching R Diode Reverse Recovery Time td(on) Rise Time tr N ot Turn-on Delay Time trr td(off) Turn-off Delay Time Fall Time VDC = 300 V, IC = 3.0 A, inductive load, VIN = 05 V or 50 V, TJ = 25 C Low-side Switching Diode Reverse Recovery Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time td(on) tr td(off) VDC = 300 V, IC = 3.0 A, inductive load, VIN = 05 V or 50 V, TJ = 25 C tf SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 10 SIM6800M Series SIM6822M Parameter Collector-to-Emitter Leakage Current Collector-to-Emitter Saturation Voltage Diode Forward Voltage Min. Typ. Max. Unit VCE = 600 V, VIN = 0 V -- -- 1 mA VCE(SAT) IC = 5 A, VIN = 5 V -- 1.75 2.2 V VF IF = 5 A, VIN = 0 V -- 2.0 2.4 V -- 80 -- ns -- 740 -- ns -- ns : 3.4.5 Symbol 70 -- ns -- 570 -- ns tf -- 100 -- ns trr -- 80 -- ns -- 690 -- ns -- 100 -- ns -- 540 -- ns -- 100 -- ns Min. Typ. Max. Unit VCE = 600 V, VIN = 0 V -- -- 1 mA VCE(SAT) IC = 5 A, VIN = 5 V -- 1.75 2.2 V VF IF = 5 A, VIN = 0 V -- 2.0 2.4 V -- 100 -- ns -- 1030 -- ns -- 180 -- ns -- 590 -- ns tf -- 150 -- ns trr -- 100 -- ns -- 1030 -- ns -- 240 -- ns -- 540 -- ns -- 150 -- ns ICES Conditions High-side Switching Diode Reverse Recovery Time Turn-on Delay Time td(on) tr Turn-off Delay Time Fall Time VDC = 300 V, IC = 5 A, inductive load, VIN = 05 V or 50 V, TJ = 25 C ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Rise Time trr td(off) Low-side Switching Diode Reverse Recovery Time Turn-on Delay Time Rise Time tr Turn-off Delay Time Fall Time 3.4.6 td(on) td(off) VDC = 300 V, IC = 5 A, inductive load, VIN = 05 V or 50 V, TJ = 25 C tf SIM6827M Parameter Collector-to-Emitter Leakage Current Collector-to-Emitter Saturation Voltage Diode Forward Voltage Symbol ICES Conditions High-side Switching R Diode Reverse Recovery Time Turn-on Delay Time ot Rise Time N Turn-off Delay Time Fall Time trr td(on) tr td(off) VDC = 300 V, IC = 5 A, inductive load, VIN = 05 V or 50 V, TJ = 25 C Low-side Switching Diode Reverse Recovery Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time td(on) tr td(off) VDC = 300 V, IC = 5 A, inductive load, VIN = 05 V or 50 V, TJ = 25 C tf SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 11 SIM6800M Series 4. Mechanical Characteristics Unit Remarks Nm m g washer of 6.0 mm () ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g ns : Parameter Conditions Min. Typ. Max. Heatsink Mounting * 0.294 -- 0.441 Screw Torque Flatness of Heatsink See Figure 4-1. 0 -- 60 Attachment Area Package Weight -- 5.2 -- * When mounting a heatsink, it is recommended to use a metric screw of M2.5 and a plain together at each end of it. For more details about screw tightening, see Section 13.2. Heatsink Measurement position -+ - + Heasink Figure 4-1. 5. Flatness Measurement Position Insulation Distance Parameter R Clearance Conditions Between heatsink* and leads. See Figure 5-1. Min. Typ. Max. Unit 1.5 -- 2.1 mm Remarks N ot Creepage 1.7 -- -- mm * Refers to when a heatsink to be mounted is flat. If your application requires a clearance exceeding the maximum distance given above, use an alternative (e.g., a convex heatsink) that will meet the target requirement. Creepage Clearance Heatsink Figure 5-1. Insulation Distance Definitions SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 12 SIM6800M Series 6. Truth Table Table 6-1. Truth Table for Operation Modes HINx L H L H L H L H L H L H L H L H L H L H L H L H L H L H LINx L L H H L L H H L L H H L L H H L L H H L L H H L L H H High-side Transistor OFF ON OFF ON OFF ON OFF ON OFF OFF OFF OFF OFF OFF OFF OFF OFF ON OFF ON OFF OFF OFF OFF OFF ON OFF ON Low-side Transistor OFF OFF ON ON OFF OFF OFF OFF OFF OFF ON ON OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF ON ON OFF OFF OFF OFF ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Mode ns : Table 6-1 is a truth table that provides the logic level definitions of operation modes. In the case where HINx and LINx signals in each phase are high at the same time, both the high- and low-side transistors become on (simultaneous on-state). Therefore, HINx and LINx signals, the input signals for the HINx and LINx pins, require dead time setting so that such a simultaneous on-state event can be avoided. After the IC recovers from a UVLO_VCC condition, the low-side transistors resume switching in accordance with the input logic levels of the LINx signals (level-triggered), whereas the high-side transistors resume switching at the next rising edge of an HINx signal (edge-triggered). After the IC recovers from a UVLO_VB condition, the high-side transistors resume switching at the next rising edge of an HINx signal (edge-triggered). Normal Operation External Shutdown Signal Input FO = Low Level Undervoltage Lockout for High-side Power Supply (UVLO_VB) Undervoltage Lockout for Low-side Power Supply (UVLO_VCC) R Overcurrent Protection (OCP) N ot Overcurrent Limit (OCL) (OCL = SD) Thermal Shutdown (TSD) SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 13 SIM6800M Series 7. Block Diagrams 30 VB1B 21 VB1A 20 VB2 23 VB3 OCL LIN3 LIN2 LIN1 15 14 13 12 16 UVLO Input Logic UVLO UVLO High Side Level Shift Driver 28 VBB ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g HIN3 HIN2 HIN1 SD COM1 UVLO ns : VCC1 17 10 9 8 7 Input Logic (OCP reset) Low Side Driver COM2 6 VCC2 5 FO 4 UVLO Thermal Shutdown Figure 7-1. UVLO UVLO Input Logic UVLO UVLO High Side Level Shift Driver ot R 15 14 13 12 16 N OCL LIN3 LIN2 LIN1 10 9 8 7 Input Logic (OCP reset) Low Side Driver COM2 6 VCC2 5 FO 4 OCP 3 11 33 2 40 1 LS1 LS2 LS2 LS3B LS3A SIM681xM 30 HIN3 HIN2 HIN1 SD COM1 V1 U V2 W2 W1 V OCP and OCL OCP 3 VCC1 17 24 19 26 31 35 37 UVLO Thermal Shutdown VB1B 21 VB1A 20 VB2 23 VB3 28 VBB 24 19 26 31 35 37 V1 U V2 W2 11 33 2 40 1 LS1 LS2 LS2 LS3B LS3A W1 V OCP and OCL Figure 7-2. SIM682xM or SIM688xM SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 14 SIM6800M Series 8. Pin Configuration Definitions Top view 40 40 21 1 20 1 21 Description W-phase IGBT emitter, or power MOSFET source V-phase IGBT emitter, or power MOSFET source Overcurrent protection signal input Fault signal output and shutdown signal input Low-side logic supply voltage input Low-side logic ground Logic input for U-phase low-side gate driver Logic input for V-phase low-side gate driver Logic input for W-phase low-side gate driver Overcurrent limit signal input U-phase IGBT emitter, or power MOSFET source High-side shutdown signal input Logic input for U-phase high-side gate driver Logic input for V-phase high-side gate driver Logic input for W-phase high-side gate driver High-side logic ground High-side logic supply voltage input (Pin removed) Bootstrap capacitor connection for V-phase V-phase high-side floating supply voltage input U-phase high-side floating supply voltage input (Pin removed) W-phase high-side floating supply voltage input W-phase output (connected to W2 externally) (No connection) V-phase output (connected to V2 externally) (Pin removed) Positive DC bus supply voltage (No connection) U-phase high-side floating supply voltage input U-phase output (Pin removed) (Pin trimmed) V-phase IGBT emitter, or power MOSFET source (Pin removed) V-phase output (connected to V1 externally) (No connection) W-phase output (connected to W1 externally) (Pin removed) (Pin removed) W-phase IGBT emitter, or power MOSFET source ns : Pin Name LS3A LS2 OCP FO VCC2 COM2 LIN1 LIN2 LIN3 OCL LS1 SD HIN1 HIN2 HIN3 COM1 VCC1 -- V VB2 VB1A -- VB3 W1 NC V1 -- VBB NC VB1B U -- LS2 -- V2 NC W2 -- -- LS3B N ot R ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g 20 Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 15 SIM6800M Series 9. Typical Applications CR filters and Zener diodes should be added to your application as needed. This is to protect each pin against surge voltages causing malfunctions, and to avoid the IC being used under the conditions exceeding the absolute maximum ratings where critical damage is inevitable. Then, check all the pins thoroughly under actual operating conditions to ensure that your application works flawlessly. VB2 20 V 19 VCC COM1 GND HIN2 Controller HIN1 LIN3 LIN2 LIN1 5V RFO Fault CBOOT3 24 W1 16 15 14 13 12 11 10 9 8 7 6 5 4 3 26 V1 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g HIN3 HIN2 HIN1 SD HIN3 21 VB1A 23 VB3 VCC1 17 LS1 OCL LIN3 LIN2 LIN1 COM2 VCC2 FO OCP CFO Figure 9-1. 33 LS2 35 V2 37 W2 CDC VB2 20 V 19 COM1 HIN3 HIN2 HIN1 SD ot Controller N LS1 OCL LIN3 LIN2 LIN1 COM2 VCC2 FO OCP LIN3 LIN2 LIN1 5V RFO Fault 21 VB1A 23 VB3 CO2 16 15 14 13 12 11 10 9 8 7 6 5 4 3 RO2 CBOOT3 24 W1 26 V1 VDC 28 VBB MIC LS2 2 LS3A 1 RO1 CO1 CFO CS 40 LS3B VCC1 17 HIN1 M CBOOT1 SIM681xM Typical Application Using a Single Shunt Resistor R HIN2 VB1B 31 U CBOOT2 HIN3 30 MIC RS CO GND VDC 28 VBB LS2 2 LS3A 1 RO VCC ns : CBOOT2 30 VB1B 31 U M CBOOT1 33 LS2 35 V2 37 W2 CS CDC 40 LS3B CO3 RO3 RS1 RS2 Figure 9-2. RS3 SIM681xM Typical Application Using Three Shunt Resistors SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 16 SIM6800M Series 10. Physical Dimensions 20 Gate burr 1.8 0.1 16.7 4 0.2 36 0.3 8.35 0.3 3.20.2 Pin 1 indicator 17.40.5 ns : ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Top view 14.0 0.2 14.8 0.3 7.4 0.15 21 0.42 1.8 0.3 2-R1.5 40 1 +0.4 -0.3 8.35 0.3 1.15 max. 7.6 +0.1 -0.05 DIP40 Package +0.1 0.52 -0.05 1.778 0.25 33.7820.3 (Ends of pins) 1.7 min . NOTES: R - Dimensions in millimeters - Bare lead frame: Pb-free (RoHS compliant) - The leads illustrated above are for reference only, and may not be actual states of being bent. - Maximum gate burr height is 0.3 mm. ot Reference Through Hole Size and Layout N 40 21 33.7 0.04 Center of screw hole 8.7 17.4 typ. 1.1 typ. 1 20 Pin pich: 1.778 33.782 Unit: mm SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 17 SIM6800M Series 11. Marking Diagram 21 SIM68xxM Part Number YMDDX 20 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g 1 ns : 40 N ot R Lot Number: Y is the last digit of the year of manufacture (0 to 9) M is the month of the year (1 to 9, O, N, or D) DD is the day of the month (01 to 31) X is the control number SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 18 SIM6800M Series 12.2.2 Unless specifically noted, this section uses the following definitions: These pins are connected to bootstrap capacitors for the high-side floating supply. In actual applications, use either of the VB1A or VB1B pin because they are internally connected. Voltages across the VBx and these output pins should be maintained within the recommended range (i.e., the Logic Supply Voltage, VBS) given in Section 2. A bootstrap capacitor, CBOOTx, should be connected in each of the traces between the VB1A (VB1B) and U pins, the VB2 and V pins, the VB3 and W1 (W2) pins. For proper startup, turn on the low-side transistor first, then fully charge the bootstrap capacitor, CBOOTx. For the capacitance of the bootstrap capacitors, CBOOTx, choose the values that satisfy Equations (1) and (2). Note that capacitance tolerance and DC bias characteristics must be taken into account when you choose appropriate values for CBOOTx. ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g All the characteristic values given in this section are typical values. All the circuit diagrams listed in this section represent the type of IC that incorporates power MOSFETs. All the functional descriptions in this section are also applicable to the type of IC that incorporates IGBTs. For pin and peripheral component descriptions, this section employs a notation system that denotes a pin name with the arbitrary letter "x", depending on context. Thus, "the VCCx pin" is used when referring to either or both of the VCC1 and VCC2 pins. The COM1 pin is always connected to the COM2 pin. 12.1 Turning On and Off the IC The procedures listed below provide recommended startup and shutdown sequences. To turn on the IC properly, do not apply any voltage on the VBB, HINx, and LINx pins until the VCCx pin voltage has reached a stable state (VCC(ON) 12.5 V). It is required to fully charge bootstrap capacitors, CBOOTx, at startup (see Section 12.2.2). To turn off the IC, set the HINx and LINx pins to logic low (or "L"), and then decrease the VCCx pin voltage. 12.2 Pin Descriptions 12.2.1 VB1A, VB1B, VB2, and VB3 ns : 12. Functional Descriptions U, V, V1, V2, W1, and W2 N ot R These pins are the outputs of the three phases, and serve as the connection terminals to the 3-phase motor. The V1 and W1 pins must be connected to the V2 and W2 pins on a PCB, respectively. The U, V (V1) and W1 pins are the grounds for the VB1A (VB1B), VB2, and VB3 pins. The U, V and W1 pins are connected to the negative nodes of bootstrap capacitors, CBOOTx. The V pin is internally connected to the V1 pin. Since high voltages are applied to these output pins (U, V, V1, V2, W1, and W2), it is required to take measures for insulating as follows: CBOOTx (F) > 800 x t L(OFF) (1) 1 F CBOOTx 220 F (2) In Equation (1), let tL(OFF) be the maximum off-time of the low-side transistor (i.e., the non-charging time of CBOOTx), measured in seconds. Even while the high-side transistor is off, voltage across the bootstrap capacitor keeps decreasing due to power dissipation in the IC. When the VBx pin voltage decreases to VBS(OFF) or less, the high-side undervoltage lockout (UVLO_VB) starts operating (see Section 12.3.3.1). Therefore, actual board checking should be done thoroughly to validate that voltage across the VBx pin maintains over 11.0 V (VBS > VBS(OFF)) during a lowfrequency operation such as a startup period. As Figure 12-1 shows, a bootstrap diode, DBOOTx, and a current-limiting resistor, RBOOTx, are internally placed in series between the VCC1 and VBx pins. Time constant for the charging time of CBOOTx, , can be computed by Equation (3): = CBOOTx x R BOOTx , (3) where CBOOTx is the optimized capacitance of the bootstrap capacitor, and RBOOTx is the resistance of the current-limiting resistor (60 25%). Keep enough distance between the output pins and low-voltage traces. Coat the output pins with insulating resin. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 19 SIM6800M Series DBOOT1 RBOOT1 CBOOT1 DBOOT2 RBOOT2 VB2 VB3 VBB 0 23 28 CBOOT3 HO3 HO2 HO1 VCC2 Reset 0 VDC VCC U MIC VBx-HSx 31 V 26 V1 16 COM1 6 COM2 0 M Stays logic high Q 37 W2 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g 0 24 W1 Figure 12-1. Bootstrap Circuit Figure 12-3. 12.2.3 Waveforms at VBx-HSx Voltage Drop VCC1 and VCC2 These are the power supply pins for the built-in control IC. The VCC1 and VCC2 pins must be externally connected on a PCB because they are not internally connected. To prevent malfunction induced by supply ripples or other factors, put a 0.01 F to 0.1 F ceramic capacitor, CVCC, near these pins. To prevent damage caused by surge voltages, put an 18 V to 20 V Zener diode, DZ, between the VCCx and COMx pins. Voltages to be applied between the VCCx and COMx pins should be regulated within the recommended operational range of VCC, given in Section 2. 17 VCC1 5 VCC2 VCC ot N U1 VBx S HINx Set Pulse generator Reset Q HOx R HSx COM1 16 Figure 12-2. Internal Level-shifting Circuit MIC CVCC DZ R Figure 12-2 shows an internal level-shifting circuit. A high-side output signal, HOx, is generated according to an input signal on the HINx pin. When an input signal on the HINx pin transits from low to high (rising edge), a "Set" signal is generated. When the HINx input signal transits from high to low (falling edge), a "Reset" signal is generated. These two signals are then transmitted to the high-side by the level-shifting circuit and are input to the SR flip-flop circuit. Finally, the SR flip-flop circuit feeds an output signal, Q (i.e., HOx). Figure 12-3 is a timing diagram describing how noise or other detrimental effects will improperly influence the level-shifting process. When a noise-induced rapid voltage drop between the VBx and output pins (U, V, or W1; hereafter "VBx-HSx") occurs after the Set signal generation, the next Reset signal cannot be sent to the SR flip-flop circuit. And the state of an HOx signal stays logic high (or "H") because the SR flip-flop does not respond. With the HOx state being held high (i.e., the high-side transistor is in an on-state), the next LINx signal turns on the low-side transistor and causes a simultaneously-on condition, which may result in critical damage to the IC. To protect the VBx pin against such a noise effect, add a bootstrap capacitor, CBOOTx, in each phase. CBOOTx must be placed near the IC, and be connected between the VBx and HSx pins with a minimal length of traces. To use an electrolytic capacitor, add a 0.01 F to 0.1 F bypass capacitor, CPx, in parallel near these pins used for the same phase. Input logic VBS(OFF) VBS(ON) 19 ns : 5 0 Set 20 CBOOT2 DBOOT3 RBOOT3 17 VCC1 HINx VB1B 30 Figure 12-4. 12.2.4 16 COM1 6 COM2 VCCx Pin Peripheral Circuit COM1 and COM2 These are the logic ground pins for the built-in control IC. The COM1 and COM2 pins should be connected externally on a PCB because they are not internally connected. Varying electric potential of the logic ground can be a cause of improper operations. Therefore, connect the logic ground as close and short as possible to shunt resistors, RSx, at a single-point ground (or star ground) which is separated from the power ground (see Figure 12-5). SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 20 SIM6800M Series U1 VDC slightly lower than microcontroller. the output voltage of the VBB 28 CS Table 12-1. Input Signals for HINx and LINx Pins 16 COM1 LS1 11 LS2 2 6 COM2 LS3A 1 RS2 RS3 Create a single-point ground (a star ground) near RSx, but keep it separated from the power ground. Parameter Input Voltage Input Pulse Width PWM Carrier Frequency Dead Time High Level Signal Low Level Signal 3 V < VIN < 5.5 V 0 V < VIN < 0.5 V 0.5 s 0.5 s 20 kHz ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g OCP Connect the COM1 and COM2 pins on a PCB. RS1 ns : CDC Figure 12-5. 1.5 s Connections to Logic Ground U1 12.2.5 HIN1, HIN2, and HIN3; LIN1, LIN2, and LIN3 N ot R These are the input pins of the internal motor drivers for each phase. The HINx pin acts as a high-side controller; the LINx pin acts as a low-side controller. Figure 12-6 shows an internal circuit diagram of the HINx or LINx pin. This is a CMOS Schmitt trigger circuit with a built-in 20 k pull-down resistor, and its input logic is active high. Input signals across the HINx-COMx and the LINx- COMx pins in each phase should be set within the ranges provided in Table 12-1, below. Note that dead time setting must be done for HINx and LINx signals because the IC does not have a dead time generator. The higher PWM carrier frequency rises, the more switching loss increases. Hence, the PWM carrier frequency must be set so that operational case temperatures and junction temperatures have sufficient margins against the absolute maximum ranges, specified in Section 1. If the signals from the microcontroller become unstable, the IC may result in malfunctions. To avoid this event, the outputs from the microcontroller output line should not be high impedance. Also, if the traces from the microcontroller to the HINx or LINx pin (or both) are too long, the traces may be interfered by noise. Therefore, it is recommended to add an additional filter or a pull-down resistor near the HINx or LINx pin as needed (see Figure 12-7). Here are filter circuit constants for reference: - RIN1x: 33 to 100 - RINx: 1 k to 10 k - CINx: 100 pF to 1000 pF HINx (LINx) 2 k 5V 2 k 20 k COM1 (COM2) Figure 12-6. Internal Circuit Diagram of HINx or LINx Pin Input signal RIN2x Controller Figure 12-7. 12.2.6 U1 RIN1x HINx/ LINx CINx SIM68xxM Filter Circuit for HINx or LINx Pin VBB This is the input pin for the main supply voltage, i.e., the positive DC bus. All of the IGBT collectors (power MOSFET drains) of the high-side are connected to this pin. Voltages between the VBB and COMx pins should be set within the recommended range of the main supply voltage, VDC, given in Section 2. To suppress surge voltages, put a 0.01 F to 0.1 F bypass capacitor, CS, near the VBB pin and an electrolytic capacitor, CDC, with a minimal length of PCB traces to the VBB pin. Care should be taken when adding RIN1x and RIN2x to the traces. When they are connected to each other, the input voltage of the HINx and LINx pins becomes SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 21 SIM6800M Series LS1, LS2, LS3A, and LS3B U1 VBB 28 VDC CS DRS1 LS1 11 16 COM1 6 COM2 12.2.9 SD When a 5 V or 3.3 V signal is input to the SD pin, the high-side transistors turn off independently of any HINx signals. This is because the SD pin does not respond to a pulse shorter than an internal filter of 3.3 s (typ.). The SD-OCL pin connection, as described in Section 12.2.8, allows the IC to turn off the high-side transistors at OCL or OCP activation. Also, inputting the inverted signal of the FO pin to the SD pin permits all the highand low-side transistors to turn off, when the IC detects an abnormal condition (i.e., some or all of the protections such as TSD, OCP, and UVLO are activated). ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g These are the emitter (source) pins of the low-side IGBTs (power MOSFETs). For current detection, the LS1, LS2, and LS3 (LS3B) pins should be connected externally on a PCB via shunt resistors, RSx, to the COMx pin. In actual applications, use either of the LS3A or LS3B pin because they are internally connected. When connecting a shunt resistor, place it as near as possible to the IC with a minimum length of traces to the LSx and COMx pins. Otherwise, malfunction may occur because a longer circuit trace increases its inductance and thus increases its susceptibility to improper operations. In applications where long PCB traces are required, add a fast recovery diode, DRSx, between the LSx and COMx pins in order to prevent the IC from malfunctioning. Overcurrent Pprotection (OCP) This function detects inrush currents larger than those detected by the OCL. When the OCP pin voltage exceeds the OCP Threshold Voltage, VTRIP, the IC operates as follows: the OCL pin = logic high, the lowside transistors = off, the FO pin = logic low. In addition, if the OCL pin is connected to the SD pin, the high-side transistors can be turned off. For a more detailed OCP description, see Section 12.3.5. ns : 12.2.7 RS1 CDC DRS2 RS2 LS2 2 DRS3 RS3 LS3A 1 Add a fast recovery diode to a long trace. Figure 12-8. Put a shunt resistor near the IC with a minimum length to the LSx pin. 12.2.10 FO This pin operates as the fault signal output and the low-side shutdown signal input. Sections 12.3.1 and 12.3.2 explain the two functions in detail, respectively. Figure 12-9 illustrates an internal circuit diagram of the FO pin and its peripheral circuit. VFO Connections to LSx Pin U1 5V RFO FO 12.2.8 OCP and OCL INT ot N Overcurrent Limit (OCL) When the OCP pin voltage exceeds the Current Limit Reference Voltage, VLIM, the OCL pin logic level becomes high. While the OCL is in working, the output transistors operate according to an input signal (HINx or LINx). If the OCL pin is connected to the SD pin, the high-side transistors can be turned off. For a more detailed OCL description, see Section 12.3.4. 1 M 3.0 s (typ.) Blanking filter 50 CFO R The OCP pin serves as the input for the overcurrent protections which monitor the currents going through the output transistors. In normal operation, the OCL pin logic level is low. In case one or more of the protections listed below are activated by an OCP input signal, the OCL pin logic level becomes high. If the OCL pin is connected to the SD pin so that the SD pin will respond to the OCL input signal, the high-side transistors can be turned off when the protections (OCP and OCL) are activated. 2 k QFO Output SW turn-off and QFO turn-on COM Figure 12-9. Internal Circuit Diagram of FO Pin and Its Peripheral Circuit Because of its open-collector nature, the FO pin should be tied by a pull-up resistor, RFO, to the external power supply. The external power supply voltage (i.e., the FO Pin Pull-up Voltage, VFO) should range from 3.0 V to 5.5 V. When the pull-up resistor, RFO, has a too small resistance, the FO pin voltage at fault signal output becomes high due to the saturation voltage drop of a built-in transistor, QFO. Therefore, it is recommended to use a 3.3 k to 10 k pull-up resistor. To suppress noise, add a filter capacitor, CFO, near the IC with minimizing a trace length between the FO and COMx pins. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 22 SIM6800M Series To avoid the repetition of OCP activations, the external microcontroller must shut off any input signals to the IC within an OCP hold time, tP, which occurs after the internal transistor (QFO) turn-on. tP is 15 s where minimum values of thermal characteristics are taken into account. (For more details, see Section 12.3.5.) Our recommendation is to use a 0.001 F to 0.01 F filter capacitor. Table 12-2. Shutdown Signals Parameter High Level Signal Low Level Signal Input Voltage Input Pulse Width 3 V < VIN < 5.5 V 0 V < VIN < 0.5 V -- 6 s 12.3.3 Undervoltage Lockout for Power Supply (UVLO) 12.3.1 In case the gate-driving voltages of the output transistors decrease, their steady-state power dissipations increase. This overheating condition may cause permanent damage to the IC in the worst case. To prevent this event, the SIM6800M series has the undervoltage lockout (UVLO) circuits for both of the high- and low-side power supplies in the monolithic IC (MIC). ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g This section describes the various protection circuits provided in the SIM6800M series. The protection circuits include the undervoltage lockout for power supplies (UVLO), the overcurrent protection (OCP), and the thermal shutdown (TSD). In case one or more of these protection circuits are activated, the FO pin outputs a fault signal; as a result, the external microcontroller can stop the operations of the three phases by receiving the fault signal. The external microcontroller can also shut down IC operations by inputting a fault signal to the FO pin. In the following functional descriptions, "HOx" denotes a gate input signal on the high-side transistor, whereas "LOx" denotes a gate input signal on the lowside transistor.. ns : 12.3 Protection Functions 12.3.3.1. Undervoltage Lockout for High-side Power Supply (UVLO_VB) Figure 12-10 shows operational waveforms of the undervoltage lockout for high-side power supply (i.e., UVLO_VB). Fault Signal Output In case one or more of the following protections are actuated, an internal transistor, QFO, turns on, then the FO pin becomes logic low (0.5 V). 1) Low-side undervoltage lockout (UVLO_VCC) 2) Overcurrent protection (OCP) 3) Thermal shutdown (TSD) N ot R While the FO pin is in the low state, all the low-side transistors turn off. In normal operation, the FO pin outputs a high signal of 5 V. The fault signal output time of the FO pin at OCP activation is the OCP hold time (tP) of 25 s (typ.), fixed by a built-in feature of the IC itself (see Section 12.3.5). The external microcontroller receives the fault signals with its interrupt pin (INT), and must be programmed to put the HINx and LINx pins to logic low within the predetermined OCP hold time, tP. HINx 0 LINx 0 UVLO_VB operation VBx-HSx VBS(OFF) UVLO release 0 HOx Shutdown Signal Input The FO pin also acts as the input pin of shutdown signals. When the FO pin becomes logic low, all the low-side transistors turn off. The voltages and pulse widths of the shutdown signals to be applied between the FO and COMx pins are listed in Table 12-2. About 3 s HOx restarts at positive edge after UVLO_VB release. 0 LOx 0 FO 12.3.2 VBS(ON) No FO output at UVLO_VB. 0 Figure 12-10. UVLO_VB Operational Waveforms When the voltage between the VBx and output pins (VBx-HSx shown in Figure 12-10) decreases to the Logic Operation Stop Voltage (VBS(OFF), 10.0 V) or less, the UVLO_VB circuit in the corresponding phase gets SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 23 SIM6800M Series Overcurrent Limit (OCL) The overcurrent limit (OCL) is a protection against relatively low overcurrent conditions. Figure 12-12 shows an internal circuit of the OCP and OCL pins; Figure 12-13 shows OCL operational waveforms. When the OCP pin voltage increases to the Current Limit Reference Voltage (VLIM, 0.6500 V) or more, and remains in this condition for a period of the Current Limit Blanking Time (tBK(OCP), 2 s) or longer, the OCL circuit is activated. Then, the OCL pin goes logic high. During the OCL operation, the gate logic levels of the low-side transistors respond to an input command on the LINx pin. To turn off the high-side transistors during the OCL operation, connect the OCL and SD pins on a PCB. The SD pin has an internal filter of about 3.3 s (typ.). When the OCP pin voltage falls below VLIM (0.6500 V), the OCL pin logic level becomes low. After the OCL pin logic has become low, the high-side transistors remain turned off until the first low-to-high transition on an HINx input signal occurs (i.e., edge-triggered). ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g 12.3.3.2. Undervoltage Lockout for Low-side Power Supply (UVLO_VCC) 12.3.4 ns : activated and sets an HOx signal to logic low. When the voltage between the VBx and HSx pins increases to the Logic Operation Start Voltage (VBS(ON), 10.5 V) or more, the IC releases the UVLO_VB operation. Then, the HOx signal becomes logic high at the rising edge of the first input command after the UVLO_VB release. Any fault signals are not output from the FO pin during the UVLO_VB operation. In addition, the VBx pin has an internal UVLO_VB filter of about 3 s, in order to prevent noise-induced malfunctions. Figure 12-11 shows operational waveforms of the undervoltage lockout for low-side power supply (i.e., UVLO_VCC). When the VCC2 pin voltage decreases to the Logic Operation Stop Voltage (VCC(OFF), 11.0 V) or less, the UVLO_VCC circuit in the corresponding phase gets activated and sets both of HOx and LOx signals to logic low. When the VCC2 pin voltage increases to the Logic Operation Start Voltage (VCC(ON), 11.5 V) or more, the IC releases the UVLO_VCC operation. Then, the IC resumes the following transmissions: an LOx signal according to an LINx pin input command; an HOx signal according to the rising edge of the first HINx pin input command after the UVLO_VCC release. During the UVLO_VCC operation, the FO pin becomes logic low and sends fault signals. In addition, the VCC2 pin has an internal UVLO_VCC filter of about 3 s, in order to prevent noise-induced malfunctions. U1 0.65 V 3 2 k 10 OCL Filter 2 k OCP 200 k 200 k COM2 6 Figure 12-12. Internal Circuit of OCP and OCL Pins HINx HINx 0 LINx 0 0 ot 0 R LINx N VCC2 VCC(OFF) OCP VLIM UVLO_VCC operation VCC(ON) 0 0 OCL (SD) HOx 0 tBK(OCP) 3.3 s (typ.) 0 HOx About 3 s LOx responds to input signal. LOx 0 0 LOx 0 FO 0 Figure 12-11. HOx restarts at positive edge after OCL release. Figure 12-13. OCL Operational Waveforms (OCL = SD) UVLO_VCC Operational Waveforms SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 24 SIM6800M Series Overcurrent Protection (OCP) U1 VTRIP OCP 2 k VBB 28 + 3 200 k CO Blanking filter 1.65 s (typ.) Output SW turn-off and QFO turn-on COM2 6 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g The overcurrent protection (OCP) is a protection against large inrush currents (i.e., high di/dt). Figure 12-14 is an internal circuit diagram describing the OCP pin and its peripheral circuit. The OCP pin detects overcurrents with voltage across external shunt resistors, RSx. Because the OCP pin is internally pulled down, the OCP pin voltage increases proportionally to a rise in the currents running through the shunt resistors, RSx. Figure 12-15 is a timing chart that represents operation waveforms during OCP operation. When the OCP pin voltage increases to the OCP Threshold Voltage (VTRIP, 1.0 V) or more, and remains in this condition for a period of the OCP Blanking Time (tBK, 2 s) or longer, the OCP circuit is activated. The enabled OCP circuit shuts off the low-side transistors and puts the FO pin into a low state. Then, output current decreases as a result of the output transistors turn-off. Even if the OCP pin voltage falls below VTRIP, the IC holds the FO pin in the low state for a fixed OCP hold time (tP) of 25 s (typ.). Then, the output transistors operate according to input signals. The OCP is used for detecting abnormal conditions, such as an output transistor shorted. In case short-circuit conditions occur repeatedly, the output transistors can be destroyed. To prevent such event, motor operation must be controlled by the external microcontroller so that it can immediately stop the motor when fault signals are detected. For proper shunt resistor setting, your application must meet the following: are shorted to ground (ground fault). In case any of these pins falls into a state of ground fault, the output transistors may be destroyed. ns : 12.3.5 Use the shunt resistor that has a recommended resistance, RSx (see Section 2). Set the OCP pin input voltage to vary within the rated OCP pin voltages, VOCP (see Section 1). Keep the current through the output transistors below the rated output current (pulse), IOP (see Section 1). ROx ot N DRSx RSx COM Figure 12-14. Internal Circuit Diagram of OCP Pin and Its Peripheral Circuit HINx 0 LINx 0 OCP tBK tBK tBK VTRIP VLIM 0 HOx HOx responds to input signal. 0 LOx 0 FO R It is required to use a resistor with low internal inductance because high-frequency switching current will flow through the shunt resistors, RSx. In addition, choose a resistor with allowable power dissipation according to your application. When you connect a CR filter (i.e., a pair of a filter resistor, RO, and a filter capacitor, CO) to the OCP pin, care should be taken in setting the time constants of RO and CO. The larger the time constant, the longer the time that the OCP pin voltage rises to VTRIP. And this may cause permanent damage to the transistors. Consequently, a propagation delay of the IC must be taken into account when you determine the time constants. For RO and CO, their time constants must be set to the values listed in Table 12-3. And place CO as close as possible to the IC with minimizing a trace length between the OCP and COMx pins. Note that overcurrents are undetectable when one or more of the U, V/V1/V2, and W1/W2 pins or their traces LSx A/D FO restarts automatically after tP. tP 0 Figure 12-15. OCP Operational Waveforms Table 12-3. Reference Time Constants for CR Filter Part Number SIM681x SIM682x SIM688x SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 Time Constant (s) 2 0.2 25 SIM6800M Series Thermal Shutdown (TSD) HINx 13.1 PCB Pattern Layout Figure 13-1 shows a schematic diagram of a motor driver circuit. The motor driver circuit consists of current paths having high frequencies and high voltages, which also bring about negative influences on IC operation, noise interference, and power dissipation. Therefore, PCB trace layouts and component placements play an important role in circuit designing. Current loops, which have high frequencies and high voltages, should be as small and wide as possible, in order to maintain a low-impedance state. In addition, ground traces should be as wide and short as possible so that radiated EMI levels can be reduced. ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g The SIM6800M series incorporates a thermal shutdown (TSD) circuit. Figure 12-16 shows TSD operational waveforms. In case of overheating (e.g., increased power dissipation due to overload, a rise in ambient temperature at the device, etc.), the IC shuts down the low-side output transistors. The TSD circuit in the monolithic IC (MIC) monitors temperatures (see Section 7). When the temperature of the monolithic IC (MIC) exceeds the TSD Operating Temperature (TDH, 150 C), the TSD circuit is activated. When the temperature of the monolithic IC (MIC) decreases to the TSD Releasing Temperature (TDL, 120 C) or less, the shutdown condition is released. The output transistors then resume operating according to input signals. During the TSD operation, the FO pin becomes logic low and transmits fault signals. Note that junction temperatures of the output transistors themselves are not monitored; therefore, do not use the TSD function as an overtemperature prevention for the output transistors. 13. Design Notes ns : 12.3.6 28VBB VDC 31 U 0 LINx MIC 0 TSD operation TDH Tj(MIC) 26 V1 V2 35 W1 24 W2 37 Ground traces should be wide and short. M TDL 0 HOx 11 0 LOx responds to input signals. 0 Figure 13-1. ot FO High-frequency, high-voltage current loops should be as small and wide as possible. R LOx N 0 Figure 12-16. LS1 LS2 2 LS3A 1 High-frequency, High-voltage Current Paths TSD Operational Waveforms 13.2 Considerations in Heatsink Mounting The following are the key considerations and the guidelines for mounting a heatsink: It is recommended to use a pair of a metric screw of M2.5 and a plain washer of 6.0 mm (). To tighten the screws, use a torque screwdriver. Tighten the two screws firstly up to about 30% of the maximum screw torque, then finally up to 100% of the prescribed maximum screw torque. Perform appropriate tightening within the range of screw torque defined in Section 4. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 26 SIM6800M Series Screw hole ns : typical measurement circuits for breakdown voltage: Figure 13-3 shows the high-side transistor (Q1H) in the U-phase; Figure 13-4 shows the low-side transistor (Q1L) in the U-phase. And all the pins that are not represented in these figures are open. When measuring the high-side transistors, leave all the pins not be measured open. When measuring the low-side transistors, connect the LSx pin to be measured to the COMx pin, then leave other unused pins open. 28VBB ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g When mounting a heatsink, it is recommended to use silicone greases. If a thermally conductive sheet or an electrically insulating sheet is used, package cracks may be occurred due to creases at screw tightening. Therefore, you should conduct thorough evaluations before using these materials. When applying a silicone grease, make sure that there must be no foreign substances between the IC and a heatsink. Extreme care should be taken not to apply a silicone grease onto any device pins as much as possible. The following requirements must be met for proper grease application: - Grease thickness: 100 m - Heatsink flatness: 100 m - Apply silicone grease within the area indicated in Figure 13-2, below. Q1H Q2H 19 V Screw hole COM116 7.4 M2.5 7.4 1.25 Figure 13-2. Thermal silicone grease application area Heatsink 31.3 MIC 26 V1 W1 24 COM2 6 35 V2 Q1L M2.5 1.25 V Q3H U 31 Q2L Q3L 37 W2 LS1 Unit: mm 11 LS2 2 LS3A 1 33 LS2 40 LS3B Reference Application Area for Thermal Silicone Grease 13.3 Considerations in IC Characteristics Measurement Figure 13-3. Typical Measurement Circuit for Highside Transistor (Q1H) in U-phase When measuring the breakdown voltage or leakage current of the transistors incorporated in the IC, note that the gate and emitter (source) of each transistor should have the same potential. Moreover, care should be taken when performing the measurements, because each transistor is connected as follows: 28VBB R Q1H N ot All the high-side collectors (drains) are internally connected to the VBB pin. In the U-phase, the high-side emitter (source) and the low-side collector (drain) are internally connected, and are also connected to the U pin. (In the V- and W-phases, the high- and low-side transistors are unconnected inside the IC.) The gates of the high-side transistors are pulled down to the corresponding output (U, V/V1, and W1) pins; similarly, the gates of the low-side transistors are pulled down to the COM2 pin. When measuring the breakdown voltage or leakage current of the transistors, note that all of the output (U, V/V1, and W1), LSx, and COMx pins must be appropriately connected. Otherwise the switching transistors may result in permanent damage. The following are circuit diagrams representing Q2H Q3H U 31 19 V MIC 26 V1 W1 24 COM116 COM2 6 V 35 V2 Q1L Q2L Q3L 37 W2 LS1 11 LS2 2 LS3A 1 33 LS2 40 LS3B Figure 13-4. Typical Measurement Circuit for Lowside Transistor (Q1L) in U-phase SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 27 SIM6800M Series This section describes the procedures to calculate power losses in switching transistors, and to estimate a junction temperature. Note that the descriptions listed here are applicable to the SIM6800M series, which is controlled by a 3-phase sine-wave PWM driving strategy. For quick and easy references, we offer calculation support tools online. Please visit our website to find out more. DT0026: SIM681xM Calculation Tool http://www.semicon.sanken-ele.co.jp/en/calctool/sim681xm_caltool_en.html 1 + M x sin( + ) , 2 DT = M is the modulation index (0 to 1), cos is the motor power factor (0 to 1), IM is the effective motor current (A), is the slope of the linear approximation in the VCE(SAT) vs. IC curve, and is the intercept of the linear approximation in the VCE(SAT) vs. IC curve. ns : 14. Calculating Power Losses and Estimating Junction Temperatures VCC = 15 V ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g 2.0 1.8 y = 0.19x + 0.92 1.6 VCE(SAT) (V) DT0027: SIM682xM and SIM6880M Calculation Tool http://www.semicon.sanken-ele.co.jp/en/calctool/sim682xm_caltool_en.html 125C 75C 1.4 25C 1.2 1.0 0.8 14.1 IGBT 0.0 1.0 2.0 3.0 4.0 5.0 IC (A) Total power loss in an IGBT can be obtained by taking the sum of steady-state loss, PON, and switching loss, PSW. The following subsections contain the mathematical procedures to calculate these losses (PON and PSW) and the junction temperature of all IGBTs operating. 14.1.2 14.1.1 Switching loss in an IGBT can be calculated by Equation (5), letting IM be the effective current value of the motor: IGBT Steady-state Loss, PON ot R Steady-state loss in an IGBT can be computed by using the VCE(SAT) vs. IC curves, listed in Section 15.3.1. As expressed by the curves in Figure 14-1, linear approximations at a range the IC is actually used are obtained by: VCE(SAT) = x IC + . The values gained by the above calculation are then applied as parameters in Equation (4), below. Hence, the equation to obtain the IGBT steady-state loss, PON, is: 1 () x IC () x DT x d V 2 0 CE(SAT) N PON = 1 1 4 = + M x cos IM 2 2 2 3 2 1 + + M x cos IM . 2 8 Figure 14-1. PSW = Where: VCE(SAT) is the collector-to-emitter saturation voltage of the IGBT (V), IC is the collector current of the IGBT (A), DT is the duty cycle, which is given by IGBT Switching Loss, PSW VDC 2 x fC x E x IM x . 300 (5) Where: fC is the PWM carrier frequency (Hz), VDC is the main power supply voltage (V), i.e., the VBB pin input voltage, and E is the slope of the switching loss curve (see Section 15.3.2). 14.1.3 (4) Linear Approximate Equation of VCE(SAT) vs. IC Curve Estimating Junction Temperature of IGBT The junction temperature of all IGBTs operating, TJ, can be estimated with Equation (6): TJ = R (J-C)Q x {(PON + PSW ) x 6} + TC . (6) Where: R(J-C)Q is the junction-to-case thermal resistance (C/W) of all the IGBTs operating, and TC is the case temperature (C), measured at the point defined in Figure 3-1. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 28 SIM6800M Series 14.2 Power MOSFET VCC = 15 V 8 y = 0.53x + 5.64 7 125C 6 RDS(ON) () 5 75C 4 3 25C 2 1 0 0.0 0.5 Steady-state loss in a power MOSFET can be computed by using the RDS(ON) vs. ID curves, listed in Section 15.3.1. As expressed by the curves in Figure 14-2, linear approximations at a range the ID is actually used are obtained by: RDS(ON) = x ID + . The values gained by the above calculation are then applied as parameters in Equation (7), below. Hence, the equation to obtain the power MOSFET steady-state loss, PRON, is: 1 I ()2 x R DS(ON) () x DT x d 2 0 D = 22 1 3 + M x cos IM 3 3 32 1 1 +2 + M x cos IM 2 . 8 3 (7) R Where: ID is the drain current of the power MOSFET (A), RDS(ON) is the drain-to-source on-resistance of the power MOSFET (), DT is the duty cycle, which is given by 1 + M x sin( + ) , 2 N ot DT = M is the modulation index (0 to 1), cos is the motor power factor (0 to 1), IM is the effective motor current (A), is the slope of the linear approximation in the RDS(ON) vs. ID curve, and is the intercept of the linear approximation in the RDS(ON) vs. ID curve. 2.0 Linear Approximate Equation of RDS(ON) vs. ID Curve ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Power MOSFET Steady-state Loss, PRON PRON = 1.5 ID (A) Figure 14-2. 14.2.1 1.0 ns : Total power loss in a power MOSFET can be obtained by taking the sum of the following losses: steady-state loss, PRON; switching loss, PSW; the steadystate loss of a body diode, PSD. In the calculation procedure we offer, the recovery loss of a body diode, PRR, is considered negligibly small compared with the ratios of other losses. The following subsections contain the mathematical procedures to calculate these losses (PRON, PSW, and PSD) and the junction temperature of all power MOSFETs operating. 14.2.2 Power MOSFET Switching Loss, PSW Switching loss in a power MOSFET can be calculated by Equation (8), letting IM be the effective current value of the motor: PSW = VDC 2 x fC x E x IM x . 300 (8) Where: fC is the PWM carrier frequency (Hz), VDC is the main power supply voltage (V), i.e., the VBB pin input voltage, and E is the slope of the switching loss curve (see Section 15.3.2). 14.2.3 Body Diode Steady-state Loss, PSD Steady-state loss in the body diode of a power MOSFET can be computed by using the VSD vs. ISD curves, listed in Section 15.3.1. As expressed by the curves in Figure 14-3, linear approximations at a range the ISD is actually used are obtained by: VSD = x ISD + . The values gained by the above calculation are then applied as parameters in Equation (9), below. Hence, the equation to obtain the body diode steady-state loss, PSD, is: PSD = 1 V () x ISD () x (1 - DT) x d 2 0 SD 1 1 4 = - M x cos IM 2 2 2 3 (9) 2 1 + - M x cos IM . 2 8 SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 29 SIM6800M Series Where: VSD is the source-to-drain diode forward voltage of the power MOSFET (V), ISD is the source-to-drain diode forward current of the power MOSFET (A), DT is the duty cycle, which is given by 1 + M x sin( + ) , 2 1.2 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g M is the modulation index (0 to 1), cos is the motor power factor (0 to 1), IM is the effective motor current (A), is the slope of the linear approximation in the VSD vs. ISD curve, and is the intercept of the linear approximation in the VSD vs. ISD curve. 25C VSD (V) 1.0 0.8 ns : DT = 75C y = 0.24x + 0.55 0.6 125C 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 ISD (A) Figure 14-3. 14.2.4 Linear Approximate Equation of VSD vs. ISD Curve Estimating Junction Temperature of Power MOSFET R The junction temperature of all power MOSFETs operating, TJ, can be estimated with Equation (10): (10) N ot TJ = R J-C x {(PON + PSW + PSD ) x 6} + TC . Where: RJ-C is the junction-to-case thermal resistance (C/W) of all the power MOSFETs operating, and TC is the case temperature (C), measured at the point defined in Figure 3-1. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 30 SIM6800M Series 15. Performance Curves 15.1 Transient Thermal Resistance Curves The following graphs represent transient thermal resistance (the ratios of transient thermal resistance), with steadystate thermal resistance = 1. ns : Ratio of Transient Thermal Resistance 1.00 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g 0.10 0.01 0.001 0.01 Figure 15-1. 0.1 Time (s) 1 10 Transient Thermal Resistance Curve: SIM681xM Ratio of Transient Thermal Resistance 1.00 0.10 0.01 Figure 15-2. 0.1 Time (s) 1 10 Transient Thermal Resistance Curve: SIM682xM ot R 0.01 0.001 Ratio of Transient Thermal Resistance N 1.00 0.10 0.01 0.001 0.01 0.1 1 10 Time (s) Figure 15-3. Transient Thermal Resistance Curve: SIM6818M SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 31 SIM6800M Series 15.2 Performance Curves of Control Parts Figure 15-4 to Figure 15-28 provide performance curves of the control parts integrated in the SIM6800M series, including variety-dependent characteristics and thermal characteristics. TJ represents the junction temperature of the control parts. Table 15-1. Typical Characteristics of Control Parts ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g ns : Figure Caption Logic Supply Current, ICC vs. TC (INx = 0 V) Logic Supply Current, ICC vs. TC (INx = 5 V) VCCx Pin Voltage, VCC vs. Logic Supply Current, ICC curve Logic Supply Current (1-phase) IBS vs. TC (HINx = 0 V) Logic Supply Current (1-phase) IBS vs. TC (HINx = 5 V) VBx Pin Voltage, VB vs. Logic Supply Current, IBS (HINx = 0 V) Logic Operation Start Voltage, VBS(ON) vs. TC Logic Operation Stop Voltage, VBS(OFF) vs. TC Logic Operation Start Voltage, VCC(ON) vs. TC Logic Operation Stop Voltage, VCC(OFF) vs. TC UVLO_VB Filtering Time vs. TC UVLO_VCC Filtering Time vs. TC High Level Input Threshold Voltage, VIH vs. TC Low Level Input Threshold Voltage, VIL vs. TC Input Current at High Level (HINx or LINx), IIN vs. TC High-side Turn-on Propagation Delay vs. TC (from HINx to HOx) Low-side Turn-on Propagation Delay vs. TC (from LINx to LOx) Minimum Transmittable Pulse Width for High-side Switching, tHIN(MIN) vs. TC Minimum Transmittable Pulse Width for Low-side Switching, tLIN(MIN) vs. TC SD Pin Filtering Time vs. TC FO Pin Filtering Time vs. TC Current Limit Reference Voltage, VLIM vs. TC OCP Threshold Voltage, VTRIP vs. TC OCP Hold Time, tP vs. TC OCP Blanking Time, tBK(OCP) vs. TC; Current Limit Blanking Time, tBK(OCL) vs. TC VCCx = 15 V, HINx = 0 V, LINx = 0 V 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 R Max. Min. -30 0 30 60 90 120 150 ICC (mA) ot Typ. N ICC (mA) Figure Number Figure 15-4 Figure 15-5 Figure 15-6 Figure 15-7 Figure 15-8 Figure 15-9 Figure 15-10 Figure 15-11 Figure 15-12 Figure 15-13 Figure 15-14 Figure 15-15 Figure 15-16 Figure 15-17 Figure 15-18 Figure 15-19 Figure 15-20 Figure 15-21 Figure 15-22 Figure 15-23 Figure 15-24 Figure 15-25 Figure 15-26 Figure 15-27 Figure 15-28 VCCx = 15 V, HINx = 5 V, LINx = 5 V 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Logic Supply Current, ICC vs. TC (INx = 0 V) Typ. Min. -30 0 30 60 90 120 150 TC (C) TC (C) Figure 15-4. Max. Figure 15-5. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 Logic Supply Current, ICC vs. TC (INx = 5 V) 32 SIM6800M Series HINx = 0 V, LINx = 0 V 3.8 3.6 200 Max. 3.4 3.2 IBS (A) 125C 3.0 25C -30C 2.8 150 Typ. Min. 100 50 2.6 0 12 13 14 15 16 17 18 19 20 -30 0 ns : ICC (mA) VBx = 15 V, HINx = 0 V 250 30 60 VCC (V) ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Figure 15-7. 160 Max. Typ. 150 Min. 100 140 IBS (A) IBS (A) VBx = 15 V, HINx = 0 V 180 200 120 60 0 25C -30C 40 -30 0 30 60 90 120 150 12 13 14 15 TC (C) Figure 15-8. Logic Supply Current (1-phase) IBS vs. TC (HINx = 5 V) Figure 15-9. R Max. Min. -30 0 30 60 90 120 150 VBS(OFF) (V) Typ. ot 11.5 11.3 11.1 10.9 10.7 10.5 10.3 10.1 9.9 9.7 9.5 17 18 19 20 Logic Operation Start Voltage, VBS(ON) vs. TC VBx Pin Voltage, VB vs. Logic Supply Current, IBS (HINx = 0 V) 11.0 10.8 10.6 10.4 10.2 10.0 9.8 9.6 9.4 9.2 9.0 Max. Typ. Min. -30 0 30 60 90 120 150 TC (C) TC (C) Figure 15-10. 16 VB (V) N VBS(ON) (V) 125C 100 80 50 150 Logic Supply Current (1-phase) IBS vs. TC (HINx = 0 V) VBx = 15 V, HINx = 5 V 250 120 TC (C) Figure 15-6. VCCx Pin Voltage, VCC vs. Logic Supply Current, ICC curve 300 90 Figure 15-11. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 Logic Operation Stop Voltage, VBS(OFF) vs. TC 33 Max. Typ. Min. -30 0 30 60 90 120 12.0 11.8 11.6 11.4 11.2 11.0 10.8 10.6 10.4 10.2 10.0 150 Max. Typ. Min. -30 0 30 TC (C) Logic Operation Start Voltage, VCC(ON) vs. TC Max. Typ. Min. -30 0 30 60 90 120 Figure 15-13. UVLO_VCC Filtering Time (s) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Figure 15-14. 120 150 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 150 -30 0 30 60 90 Max. Typ. Min. 120 150 TC (C) UVLO_VB Filtering Time vs. TC Figure 15-15. UVLO_VCC Filtering Time vs. TC 2.0 1.8 R 2.2 Max. ot 2.0 Typ. 1.4 Min. 1.8 N 1.6 Max. 1.6 VIL (V) 2.4 VIH (V) 90 Logic Operation Stop Voltage, VCC(OFF) vs. TC TC (C) 2.6 60 TC (C) ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g UVLO_VB Filtering Time (s) Figure 15-12. ns : 12.5 12.3 12.1 11.9 11.7 11.5 11.3 11.1 10.9 10.7 10.5 VCC(OFF) (V) VCC(ON) (V) SIM6800M Series 1.4 Typ. 1.2 Min. 1.0 1.2 1.0 0.8 -30 0 30 60 90 120 150 -30 Figure 15-16. High Level Input Threshold Voltage, VIH vs. TC 0 30 60 90 120 150 TC (C) TC (C) Figure 15-17. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 Low Level Input Threshold Voltage, VIL vs. TC 34 SIM6800M Series INHx or INLx = 5 V 800 Max. IIN (A) 300 250 Typ. 200 Min. 150 100 50 0 30 60 90 120 Typ. 600 Min. 500 400 300 200 100 0 -30 Max. 700 0 150 -30 0 30 Input Current at High Level (HINx or LINx), IIN vs. TC Figure 15-19. 90 120 150 High-side Turn-on Propagation Delay vs. TC (from HINx to HOx) 400 700 350 600 Max. 500 Typ. 400 Min. 300 200 100 Max. 300 tHIN(MIN) (ns) Low-side Turn-on Propagation Delay (ns) Figure 15-18. Typ. 250 Min. 200 150 100 50 0 0 -30 0 30 60 90 120 150 -30 0 30 TC (C) 400 60 90 120 150 TC (C) Figure 15-20. Low-side Turn-on Propagation Delay vs. TC (from LINx to LOx) Figure 15-21. Minimum Transmittable Pulse Width for High-side Switching, tHIN(MIN) vs. TC ot 300 250 Max. 5 Typ. 4 Min. N 200 tSD (ns) R 6 350 tLIN(MIN) (ns) 60 TC (C) ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g TC (C) ns : 350 High-side Turn-on Propagation Delay (ns) 400 Max. 3 Typ. 150 2 Min. 100 1 50 0 0 -30 0 30 60 90 120 150 -30 0 TC (C) Figure 15-22. Minimum Transmittable Pulse Width for Low-side Switching, tLIN(MIN) vs. TC 30 60 90 120 150 TC (C) Figure 15-23. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 SD Pin Filtering Time vs. TC 35 SIM6800M Series 0.750 6 0.725 5 Max. 3 Typ. 2 VLIM (ns) tFO (ns) 0.700 4 Min. Max. 0.675 Typ. 0.650 Min. 0.625 0.600 1 0.550 -30 0 30 60 90 120 -30 150 0 30 FO Pin Filtering Time vs. TC Figure 15-25. Typ. Min. tP (s) Max. 0 30 60 90 120 0 150 3.0 30 60 90 Max. Typ. Min. 120 150 TC (C) Figure 15-27. OCP Hold Time, tP vs. TC Max. ot 2.5 2.0 Typ. Min. 1.5 N tBK (s) OCP Threshold Voltage, VTRIP vs. TC R 3.5 150 Current Limit Reference Voltage, VLIM vs. TC TC (C) Figure 15-26. 120 50 45 40 35 30 25 20 15 10 5 0 -30 4.0 90 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g VTRIP (ns) Figure 15-24. -30 60 TC (C) TC (C) 1.10 1.08 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 0.90 ns : 0.575 0 1.0 0.5 0.0 -30 0 30 60 90 120 150 TC (C) Figure 15-28. OCP Blanking Time, tBK(OCP) vs. TC; Current Limit Blanking Time, tBK(OCL) vs. TC SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 36 SIM6800M Series 15.3 Performance Curves of Output Parts 15.3.1 Output Transistor Performance Curves 7 25C VSD (V) 75C 4 3 25C 2 0.8 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g 5 75C 1.0 125C 6 RDS(ON) () 1.2 ns : VCC = 15 V 8 SIM6811M SIM6811M 15.3.1.1. SIM6811M 0.6 125C 0.4 0.2 1 0 0.0 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 ID (A) Figure 15-29. 1.5 2.0 ISD (A) Power MOSFET RDS(ON) vs. ID Figure 15-30. Power MOSFET VSD vs. ISD RDS(ON) () 75C 3 25C 2 SIM6812M 125C 4 1.2 VCC = 15 V 75C 25C 1 VSD (V) VCC = 15 V 5 SIM6812M 15.3.1.2. SIM6812M 0.8 0.6 125C 0.4 1 0 0.5 N ot 0.0 R 0.2 Figure 15-31. 1.0 1.5 2.0 2.5 0 0.0 0.5 ID (A) Power MOSFET RDS(ON) vs. ID 1.0 1.5 2.0 2.5 ISD (A) Figure 15-32. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 Power MOSFET VSD vs. ISD 37 SIM6800M Series 125C 3.5 VCC = 15 V 1.2 25C 1 3.0 2.0 VSD (V) 75C 2.5 25C 1.5 SIM6813M VCC = 15 V 4.0 RDS(ON) () SIM6813M 15.3.1.3. SIM6813M 75C 0.8 0.6 125C 0.4 ns : 1.0 0.2 0.5 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g 0.0 ID (A) Figure 15-33. 2.0 2.5 3.0 ISD (A) Power MOSFET RDS(ON) vs. ID Figure 15-34. Power MOSFET VSD vs. ISD 1.6 75C 1.4 25C 1.2 VCC = 15 V 2.5 25C 2.0 VF (V) 125C 1.8 VCE(SAT) (V) SIM6880M VCC = 15 V 2.0 SIM6880M 15.3.1.4. SIM6880M 75C 1.5 1.0 1.0 125C 0.5 0.8 0.6 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 IC (A) 2.5 3.0 IGBT VCE(SAT) vs. IC Figure 15-36. FRD VF vs. IF R Figure 15-35. 2.0 IF (A) VCE(SAT) (V) 1.6 75C 1.4 25C 25C 2.0 1.5 75C 125C 1.0 1.2 SIM6822M/27M N 125C 1.8 VCC = 15 V 2.5 VF (V) VCC = 15 V 2.0 SIM6822M/27M ot 15.3.1.5. SIM6822M and SIM6827M 0.5 1.0 0.8 0.0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 1.0 2.0 IC (A) Figure 15-37. IGBT VCE(SAT) vs. IC Figure 15-38. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 3.0 IF (A) 4.0 5.0 FRD VF vs. IF 38 SIM6800M Series 15.3.2 Switching Losses Conditions: VBB = 300 V, half-bridge circuit with inductive load. Switching Loss, E, is the sum of turn-on loss and turn-off loss. 200 200 TJ = 125C TJ = 125C 150 E (J) ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g E (J) 150 100 50 100 50 TJ = 25C 0 SIM6811M VCC = 15 V 250 ns : VB = 15 V 250 SIM6811M 15.3.2.1. SIM6811M TJ = 25C 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.2 0.4 0.6 ID (A) Figure 15-39. 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID (A) High-side Switching Loss Figure 15-40. Low-side Switching Loss 200 VCC = 15 V 250 200 TJ = 125C 100 0 0.2 0.4 0.6 N ot 0.0 R 50 Figure 15-41. TJ = 125C 150 E (J) 150 E (J) SIM6812M VB = 15 V 250 SIM6812M 15.3.2.2. SIM6812M 100 50 TJ = 25C TJ = 25C 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.2 0.4 0.6 ID (A) High-side Switching Loss 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID (A) Figure 15-42. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 Low-side Switching Loss 39 SIM6800M Series 250 200 E (J) TJ = 125C 150 100 TJ = 25C 50 150 100 TJ = 25C 50 0 0.0 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g 0 TJ = 125C ns : 200 E (J) VCC = 15 V 300 250 SIM6813M VB = 15 V 300 SIM6813M 15.3.2.3. SIM6813M 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 ID (A) Figure 15-43. 1.5 2.0 2.5 3.0 ID (A) High-side Switching Loss Figure 15-44. Low-side Switching Loss 250 250 150 100 TJ = 25C 50 0 TJ = 125C 200 E (J) E (J) 200 VB = 15 V 300 TJ = 125C SIM6880M VB = 15 V 300 SIM6880M 15.3.2.4. SIM6880M 150 100 TJ = 25C 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 IC (A) High-side Switching Loss 1.5 2.0 2.5 3.0 IC (A) Figure 15-46. Low-side Switching Loss N ot R Figure 15-45. 1.0 SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 40 SIM6800M Series 350 VCC = 15 V 400 350 300 250 250 E (J) TJ = 125C 200 150 100 TJ = 125C 200 150 100 50 50 TJ = 25C 0 TJ = 25C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g 0.0 ns : 300 E (J) SIM6822M VB = 15 V 400 SIM6822M 15.3.2.5. SIM6822M IC (A) Figure 15-47. 3.5 4.0 4.5 5.0 IC (A) High-side Switching Loss Figure 15-48. Low-side Switching Loss TJ = 125C TJ = 25C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 450 400 350 300 250 200 150 100 50 0 TJ = 25C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IC (A) Figure 15-50. Low-side Switching Loss N ot R High-side Switching Loss VCC = 15 V TJ = 125C IC (A) Figure 15-49. SIM6827M SIM6827M VB = 15 V 450 400 350 300 250 200 150 100 50 0 E (J) E (J) 15.3.2.6. SIM6827M SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 41 SIM6800M Series 15.4 Allowable Effective Current Curves The following curves represent allowable effective currents in 3-phase sine-wave PWM driving with parameters such as typical RDS(ON) or VCE(SAT), and typical switching losses. Operating conditions: VBB pin input voltage, VDC = 300 V; VCC pin input voltage, VCC = 15 V; modulation index, M = 0.9; motor power factor, cos = 0.8; junction temperature, TJ = 150 C. SIM6811M ns : 15.4.1 fC = 2 kHz 1.5 1.0 0.5 0.0 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Allowable Effective Current (Arms) 2.0 25 50 75 100 125 150 TC (C) Figure 15-51. R 1.5 fC = 16 kHz ot Allowable Effective Current (Arms) 2.0 Allowable Effective Current (fC = 2 kHz): SIM6811M N 1.0 0.5 0.0 25 50 75 100 125 150 TC (C) Figure 15-52. Allowable Effective Current (fC = 16 kHz): SIM6811M SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 42 SIM6800M Series 15.4.2 SIM6812M fC = 2 kHz 2.0 ns : 1.5 1.0 0.5 0.0 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Allowable Effective Current (Arms) 2.5 25 50 75 100 125 150 TC (C) Figure 15-53. 2.0 1.5 1.0 R 0.5 fC = 16 kHz ot Allowable Effective Current (Arms) 2.5 Allowable Effective Current (fC = 2 kHz): SIM6812M N 0.0 25 50 75 100 125 150 TC (C) Figure 15-54. Allowable Effective Current (fC = 16 kHz): SIM6812M SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 43 SIM6800M Series 15.4.3 SIM6813M fC = 2 kHz 2.5 2.0 1.0 0.5 0.0 ns : 1.5 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Allowable Effective Current (Arms) 3.0 25 50 75 100 125 150 TC (C) Figure 15-55. 2.5 2.0 1.5 R 1.0 fC = 16 kHz 0.5 ot Allowable Effective Current (Arms) 3.0 Allowable Effective Current (fC = 2 kHz): SIM6813M N 0.0 25 50 75 100 125 150 TC (C) Figure 15-56. Allowable Effective Current (fC = 16 kHz): SIM6813M SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 44 SIM6800M Series 15.4.4 SIM6880M fC = 2 kHz 2.0 ns : 1.5 1.0 0.5 0.0 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Allowable Effective Current (Arms) 2.5 25 50 75 100 125 150 TC (C) Figure 15-57. 2.0 1.5 1.0 R 0.5 fC = 16 kHz ot Allowable Effective Current (Arms) 2.5 Allowable Effective Current (fC = 2 kHz): SIM6880M N 0.0 25 50 75 100 125 150 TC (C) Figure 15-58. Allowable Effective Current (fC = 16 kHz): SIM6880M SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 45 SIM6800M Series 15.4.5 SIM6822M fC = 2 kHz 4.0 ns : 3.0 2.0 1.0 0.0 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Allowable Effective Current (Arms) 5.0 25 50 75 100 125 150 TC (C) Figure 15-59. 4.0 3.0 2.0 R 1.0 fC = 16 kHz ot Allowable Effective Current (Arms) 5.0 Allowable Effective Current (fC = 2 kHz): SIM6822M N 0.0 25 50 75 100 125 150 TC (C) Figure 15-60. Allowable Effective Current (fC = 16 kHz): SIM6822M SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 46 SIM6800M Series 15.4.6 SIM6827M fC = 2 kHz 4.0 ns : 3.0 2.0 1.0 0.0 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Allowable Effective Current (Arms) 5.0 25 50 75 100 125 150 TC (C) Figure 15-61. 4.0 3.0 2.0 R 1.0 fC = 16 kHz ot Allowable Effective Current (Arms) 5.0 Allowable Effective Current (fC = 2 kHz): SIM6827M N 0.0 25 50 75 100 125 150 TC (C) Figure 15-62. Allowable Effective Current (fC = 16 kHz): SIM6827M SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 47 SIM6800M Series 15.5 Short Circuit SOAs (Safe Operating Areas) This section provides the graphs illustrating the short circuit SOAs of the SIM6800M series devices whose output transistors consist of built-in IGBTs. Conditions: VDC 400 V, 13.5 V VCC 16.5 V, TJ = 125 C, 1 pulse. ns : 30 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Collector Current, IC(Peak) (A) 40 20 Short Circuit SOA 10 0 0 1 2 3 4 5 4 5 Pulse Width (s) Figure 15-63. Short Circuit SOA: SIM6880M 75 50 N ot R Collector Current, IC(Peak) (A) 100 Short Circuit SOA 25 0 0 1 2 3 Pulse Width (s) Figure 15-64. Short Circuit SOA: SIM6822M, SIM6827M SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 48 SIM6800M Series 16. Pattern Layout Example ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g ns : This section contains the schematic diagrams of a PCB pattern layout example using an SIM6800M series device. For more details on through holes, see Section 10. Top View N ot R Figure 16-1. Figure 16-2. Bottom View SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 49 SIM6800M Series 20 VB2 C2 VB1A 21 C6 19 V VB3 23 C7 17 VCC1 C3 W1 24 C8 CN3 R1 R2 R3 R4 R5 R6 1 2 3 4 5 6 ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g ns : 16 COM1 15 HIN3 V1 26 14 HIN2 13 HIN1 VBB 28 12 SD 11 LS1 10 OCL VB1B 30 9 LIN3 8 LIN2 7 LIN1 LS2 33 U 31 R17 V2 35 W2 37 CN1 CX1 1 2 C5 C1 CN2 3 2 1 6 COM2 5 VCC2 C9 4 FO CN4 3 OCP R16 10 9 LS3B 40 2 LS2 1 LS3A R10 8 7 6 5 R19 4 R18 3 N Figure 16-3. R9 R23 R8 R22 R7 R21 C12 C11 C10 C19 C20 C18 C17 C16 C15 C14 C13 ot R 1 C4 DZ1 R20 2 Circuit Diagram of PCB Pattern Layout Example SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 50 SIM6800M Series 17. Typical Motor Driver Application This section contains the information on the typical motor driver application listed in the previous section, including a circuit diagram, specifications, and the bill of the materials used. SIM6822M 300 VDC (typ.) 500 W Circuit Diagram See Figure 16-3. ns : Motor Driver Specifications IC Main Supply Voltage, VDC Rated Output Power N ot R ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g Bill of Materials Symbol Part Type Ratings Symbol Part Type Ratings C1 Electrolytic 47 F, 50 V R3 General 100 , 1/8 W C2 Electrolytic 47 F, 50 V R4 General 100 , 1/8 W C3 Electrolytic 47 F, 50 V R5 General 100 , 1/8 W C4 Electrolytic 100 F, 50 V R6 General 100 , 1/8 W C5 Ceramic 0.1 F, 50 V R7* Metal plate 0.15 , 2 W C6 Ceramic 0.1 F, 50 V R8* Metal plate 0.15 , 2 W C7 Ceramic 0.1 F, 50 V R9* Metal plate 0.15 , 2 W C8 Ceramic 0.1 F, 50 V R10 General 100 , 1/8 W C9 Ceramic 0.1 F, 50 V R16 General 3.3 k, 1/8 W C10 Ceramic 100 pF, 50 V R17 General 0 k, 1/8 W C11 Ceramic 100 pF, 50 V R18 General 100 , 1/8 W C12 Ceramic 100 pF, 50 V R19 General 100 , 1/8 W C13 Ceramic 100 pF, 50 V R20 General 100 , 1/8 W C14 Ceramic 100 pF, 50 V R21 General Open C15 Ceramic 100 pF, 50 V R22 General Open C16 Ceramic 100 pF, 50 V R23 General Open C17 Ceramic 100 pF, 50 V ZD1 Zener diode VZ = 21 V (max.) C18 Ceramic 100 pF, 50 V IPM1 IC SIM6822M C19 Ceramic 0.01 F, 50 V CN1 Pin header Equiv. to B2P3-VH C20 Ceramic 100 pF, 50 V CN2 Pin header Equiv. to B2P5-VH CX1 Film 0.033 F, 630 V CN3 Connector Equiv. to MA06-1 R1 General 100 , 1/8 W CN4 Connector Equiv. to MA10-1 R2 General 100 , 1/8 W * Refers to a part that requires adjustment based on operation performance in an actual application. SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 51 SIM6800M Series Important Notes N ot R ec o SI m M me 68 n 22 de M df , S or IM N e 68 w 27 De M si g ns : All data, illustrations, graphs, tables and any other information included in this document (the "Information") as to Sanken's products listed herein (the "Sanken Products") are current as of the date this document is issued. The Information is subject to any change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales representative that the contents set forth in this document reflect the latest revisions before use. The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products, please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportation equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan (collectively, the "Specific Applications"). Sanken assumes no liability or responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific Applications or in manner not in compliance with the instructions set forth herein. In the event of using the Sanken Products by either (i) combining other products or materials or both therewith or (ii) physically, chemically or otherwise processing or treating or both the same, you must duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the occurrence of any failure or defect or both in semiconductor products at a certain rate. You must take, at your own responsibility, preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which the Sanken Products are used, upon due consideration of a failure occurrence rate and derating, etc., in order not to cause any human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products. Please refer to the relevant specification documents and Sanken's official website in relation to derating. No anti-radioactive ray design has been adopted for the Sanken Products. The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of use of the Sanken Products. Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you, users or any third party, resulting from the Information. No information in this document can be transcribed or copied or both without Sanken's prior written consent. Regarding the Information, no license, express, implied or otherwise, is granted hereby under any intellectual property rights and any other rights of Sanken. 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You must not use the Sanken Products or the Information for the purpose of any military applications or use, including but not limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Information, or providing them for non-residents, you must comply with all applicable export control laws and regulations in each country including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan, and follow the procedures required by such applicable laws and regulations. Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including the falling thereof, out of Sanken's distribution network. Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting from any possible errors or omissions in connection with the Information. Please refer to our official website in relation to general instructions and directions for using the Sanken Products, and refer to the relevant specification documents in relation to particular precautions when using the Sanken Products. All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s). DSGN-CEZ-16003 SIM6800M-DSE Rev.1.8 SANKEN ELECTRIC CO., LTD Jan. 21, 2019 https://www.sanken-ele.co.jp/en (c) SANKEN ELECTRIC CO., LTD. 2014 52