
SMD Schottky Barrier DiodeSMD Schottky Barrier Diode
Page 1
QW-A1044
Symbol Typ
Parameter Conditions Min
Max
Unit
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
VR = 25V
f = 1 MHz, and 1 VDC reverse voltage
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
IR
CT
Trr
uA
pF
nS
5
10
0.5
Io = 200 mA
VR = 30 Volts
CDBF42/43 (RoHs Device)
Features
Low forward Voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Typ
IO
IFSM
VR(RMS)
VR
VRM
IFRM
Repetitive peak forward current
Average forward rectified current
Reverse voltage
Peak reverse voltage
Forward current,surge peak
Symbol
Parameter Conditions Min
Max
Unit
RMS reverse voltage
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method) A
A
mA
V
V
V
4
0.5
200
21
30
30
TSTG
Tj
Storage temperature
Junction temperature
OC
OC
+125
+125
-55
PD
Power Dissipation
Thermal resistance junction
to ambient air
mW
OC/W
200
500R JA
CDBF42/43
CDBF42
CDBF43
CDBF42
CDBF43
IF = 10mA
IF = 200mA
IF = 50mA
IF = 2mA
IF = 15mA
VFV
0.4
1
0.65
0.33
0.45
REV:A
0.102(2.60)
0.095(2.40)
0.020(0.50) Typ.
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
1005(2512)
0.012 (0.30) Typ.
0.040(1.00) Typ.
SMD Diodes Specialist