A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS / EACH SIDE TC = 25 OCNONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVDSS ID = 100 mA 65 V
IDSS VDS = 28 V VGS = 0 V 5.0 mA
IGSS VDS = 0 V VGS = 20 V 1.0 µ
µµ
µA
VGS(th) ID = 100 mA VDS = 10 V 1.0 5.0 V
VDS(on) ID = 10 A VGS = 10 V 1.5 V
gfs ID = 5.0 A VDS = 10 V 5.0 mhos
Ciss
Coss
Crss
VDS = 28 V VGS = 0 V f = 1.0 MHz 350
420
40 pF
G
p
s
push-pull VDD = 28 V IDQ = 500 mA Pout = 300 W
f = 175 MHz 12 dB
η
ηη
η
push-pull VDD = 28 V ID(max) = 21.4 A Pout = 300 W
f = 175 MHz 45 %
ψ
ψψ
ψ
push-pull VDD = 28 V IDQ = 500 mA Pout = 300 W
f = 175 MHz VSWR = 5:1 AT ALL PHASE ANGLES NO DEGRADAT ION IN OUTPUT PO WER
RF FIELD-EFFECT POWER TRANSISTOR
MRF141G
DESCRIPTION:
The ASI MRF141G is a Dual
Common Source N- Channel
Enhancement-Mode MOSFET
RF Power Transistor , Designed for
175 MHz, 300 W Tr ansm it ter and
Amplif ier Applications.
MAXIMUM RATINGS
ID32 A
VDSS 65 V
VGS ±40 V
PDISS 500 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +200 OC
θ
θθ
θJC 0.35 OC/W
PACKAGE STYLE .385X.850 4LFG
1 & 2 = DRAIN 3 & 4 = GA TE
5 = SOURCE
