Neu: Silizium-PIN-Fotodiode New: Silicon PIN Photodiode 1.1 0.9 6.7 6.2 0...5 0.2 0.1 0...0.1 0.3 1.2 1.1 Chip position BP 104 S 4.0 3.7 1.7 1.5 0.9 0.7 4.5 4.3 1.6 0.2 Cathode lead feo06862 Photosensitive area 2.20 mm x 2.20 mm GEO06861 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm Kurze Schaltzeit (typ. 20 ns) geeignet fur Vapor-Phase Loten und IRReflow-Loten SMT-fahig Features Especially suitable for applications from 400 nm to 1100 nm Short switching time (typ. 20 ns) Suitable for vapor-phase and IR-reflow soldering Suitable for SMT Anwendungen Lichtschranken fur Gleich- und Wechsellichtbetrieb IR-Fernsteuerungen Industrieelektronik "Messen/Steuern/Regeln" Applications Photointerrupters IR remote controls Industrial electronics For control and drive circuits Typ Type Bestellnummer Ordering Code BP 104 S Q62702-P1605 Semiconductor Group 1 1997-11-19 BP 104 S Grenzwerte Maximum Ratings Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 85 C Sperrspannung Reverse voltage VR 20 V Verlustleistung, TA = 25 C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit VR = 5 V Spectral sensitivity S 55 ( 40) nA/lx Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax 400 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 4.84 mm2 Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area LxB 2.20 x 2.20 mm x mm Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface H 0.3 mm Halbwinkel Half angle 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 ( 30) nA Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity S 0.62 A/W Quantenausbeute, = 850 nm Quantum yield 0.90 Electrons Photon Semiconductor Group 2 LxW 1997-11-19 BP 104 S Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (cont'd) Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Leerlaufspannung, EV = 1000 lx Open-circuit voltage VO 360 ( 280) mV Kurzschlustrom, EV = 1000 lx Short-circuit current ISC 50 A Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A tr, tf 20 ns Durchlaspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 48 pF Temperaturkoeffizient von VO Temperature coefficient of VO TKV - 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TKI 0.18 %/K Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm NEP 3.6 x 10- 14 W Hz Nachweisgrenze, VR = 10 V, = 850 nm Detection limit D* 6.1 x 1012 cm * Hz W Semiconductor Group 3 1997-11-19 BP 104 S Relative spectral sensitivity Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) OHF00078 100 P S rel % OHF02283 10 3 A Total power dissipation Ptot = f (TA) 10 4 mV V OHF00958 160 mW Ptot 140 80 10 2 10 3 VO 60 100 P 10 1 120 10 2 40 80 60 10 0 10 1 40 20 20 10 -1 10 0 0 400 500 600 700 800 900 nm 1100 Dark current IR = f (VR), E = 0 10 1 10 2 10 0 10 3 lx 10 4 EV Capacitance C = f (VR), f = 1 MHz, E = 0 OHF02284 10 2 C R 0 20 40 60 80 C 100 TA Dark current IR = f (TA), VR = 10 V, E = 0 OHF01778 60 nA 0 OHF00082 10 3 R nA pF 50 10 2 10 1 40 10 1 30 20 10 0 10 0 10 10 -1 0 2 4 6 0 -2 10 8 10 12 14 16 V 20 10 -1 10 0 VR 10 1 V 10 2 VR 10 -1 0 20 40 60 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 Semiconductor Group 0.4 0 20 40 60 80 4 100 120 1997-11-19