EL2125 (R) Data Sheet Ultra-Low Noise, Low Power, Wideband Amplifier The EL2125 is an ultra-low noise, wideband amplifier that runs on half the supply current of competitive parts. It is intended for use in systems such as ultrasound imaging where a very small signal needs to be amplified by a large amount without adding significant noise. Its low power dissipation enables it to be packaged in the tiny SOT-23 package, which further helps systems where many input channels create both space and power dissipation problems. The EL2125 is stable for gains of 10 and greater and uses traditional voltage feedback. This allows the use of reactive elements in the feedback loop, a common requirement for many filter topologies. It operates from 2.5V to 15V supplies and is available in the 5-pin SOT-23 and 8-pin SO packages. The EL2125 is fabricated using Elantec's proprietary complementary bipolar process, and is specified for operation from -45C to +85C. November 14, 2002 FN7045 Features * Voltage noise of only 0.83nV/Hz * Current noise of only 2.4pA/Hz * 200V offset voltage * 175MHz -3dB BW for AV=10 * Low supply current - 10mA * SOT-23 package available * 2.5V to 15V operation Applications * Ultrasound input amplifiers * Wideband instrumentation * Communication equipment * AGC & PLL active filters * Wideband sensors Ordering Information PACKAGE TAPE & REEL PKG. NO. EL2125CW-T7 5-Pin SOT-23* 7" MDP0038 EL2125CW-T13 5-Pin SOT-23* 13" MDP0038 EL2125CS 8-Pin SO - MDP0027 EL2125CS-T7 8-Pin SO 7" MDP0027 EL2125CS-T13 8-Pin SO 13" MDP0027 PART NUMBER *EL2125CW symbol is .Fxxx where xxx represents date code Pinouts EL2125 (5-PIN SOT-23) TOP VIEW OUT 1 EL2125 (8-PIN SO) TOP VIEW NC 1 IN- 2 IN+ 3 VS- 4 8 NC 7 VS+ 6 OUT 5 NC 5 VS+ VS- 2 + IN+ 3 - + 4 IN- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright (c) Intersil Americas Inc. 2003. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc. All other trademarks mentioned are the property of their respective owners. EL2125 Absolute Maximum Ratings (TA = 25C) Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-45C to +85C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . -60C to +150C Maximum Die Junction Temperature . . . . . . . . . . . . . . . . . . . +150C 33V VS+ to VS- . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA Any Input . . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.3V to VS+ + 0.3V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA VS = 5V, TA = 25C, RF = 180, RG = 20, RL = 500 unless otherwise specified. Electrical Specifications PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT 0.2 2 mV 3 mV DC PERFORMANCE VOS Input Offset Voltage (SO8) Input Offset Voltage (SOT23-5) TCVOS Offset Voltage Temperature Coefficient IB Input Bias Current IOS Input Bias Current Offset 0.4 TCIB Input Bias Current Temperature Coefficient 0.09 A/C CIN Input Capacitance 2.2 pF AVOL Open Loop Gain 80 87 dB PSRR Power Supply Rejection Ratio (Note 1) 80 97 dB CMRR Common Mode Rejection Ratio 80 106 dB CMIR Common Mode Input Range VOUTH Output Voltage Swing High No load, RF = 1k VOUTL Output Voltage Swing Low No load, RF = 1k VOUTH2 Output Voltage Swing High RL = 100 VOUTL2 Output Voltage Swing Low RL = 100 IOUT Output Short Circuit Current (Note 2) IS Supply Current -30 at CMIR 1.8 V/C -22 A -4.6 3.5 3.8 3.65 -3.87 3 -3.7 V V V -3 100 10.1 A V 3.3 -3.5 80 2 V mA 11 mA AC Performance - RG = 20, CL = 5pF BW -3dB Bandwidth 175 MHz BW 0.1dB 0.1dB Bandwidth 34 MHz BW 1dB 1dB Bandwidth 150 MHz Peaking Peaking 0.4 dB SR Slew Rate VOUT = 2VPP, measured at 20% to 80% 185 V/s OS Overshoot, 4Vpk-pk Output Square Wave Positive 0.6 % Negative 2.7 % 42 ns 0.83 nV/Hz tS Settling Time to 0.1% of 1V Pulse VN Voltage Noise Spectral Density 2 150 EL2125 VS = 5V, TA = 25C, RF = 180, RG = 20, RL = 500 unless otherwise specified. (Continued) Electrical Specifications PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT IN Current Noise Spectral Density 2.4 pA/Hz HD2 2nd Harmonic Distortion (Note 3) -74 dBc HD3 3rd Harmonic Distortion -91 dBc NOTES: 1. Measured by moving the supplies from 4V to 6V 2. Pulse test only 3. Frequency = 1MHz, VOUT = 2Vpk-pk, into 500 and 5pF load Electrical Specifications PARAMETER VS = 15V, TA = 25C, RF = 180, RG = 20, RL = 500 unless otherwise specified. DESCRIPTION CONDITIONS MIN TYP MAX UNIT 0.6 3 mV 3 mV DC PERFORMANCE VOS Input Offset Voltage (SO8) Input Offset Voltage (SOT23-5) TCVOS Offset Voltage Temperature Coefficient IB Input Bias Current IOS Input Bias Current Offset 0.4 TCIB Input Bias Current Temperature Coefficient 0.08 A/C CIN Input Capacitance 2.2 pF AVOL Open Loop Gain 80 87 dB PSRR Power Supply Rejection Ratio (Note 1) 80 97 dB CMRR Common Mode Rejection Ratio 75 105 dB CMIR Common Mode Input Range VOUTH Output Voltage Swing High No load, RF = 1k VOUTL Output Voltage Swing Low No load, RF = 1k VOUTH2 Output Voltage Swing High RL = 100 VOUTL2 Output Voltage Swing Low RL = 100 IOUT Output Short Circuit Current (Note 2) IS Supply Current -30 at CMIR 4.9 V/C -24 A -14.6 13.35 13.8 13.5 -13.6 11 -13 V V V -9.8 250 10.8 A V 11.6 -10.4 120 2 V mA 12 mA AC Performance - RG = 20, CL = 5pF BW -3dB Bandwidth 220 MHz BW 0.1dB 0.1dB Bandwidth 23 MHz BW 1dB 1dB Bandwidth 63 MHz Peaking Peaking 2.5 dB SR Slew Rate 225 V/s OS Overshoot, 4Vpk-pk Output Square Wave 0.6 % tS Settling Time to 0.1% of 1V Pulse 38 ns VOUT = 2VPP, measured at 20% to 80% 3 180 EL2125 Electrical Specifications PARAMETER VS = 15V, TA = 25C, RF = 180, RG = 20, RL = 500 unless otherwise specified. (Continued) DESCRIPTION CONDITIONS MIN TYP MAX UNIT VN Voltage Noise Spectral Density 0.95 nV/Hz IN Current Noise Spectral Density 2.1 pA/Hz HD2 2nd Harmonic Distortion (Note 3) -73 dBc HD3 3rd Harmonic Distortion -96 dBc NOTES: 1. Measured by moving the supplies from 13.5V to 16.5V 2. Pulse test only 3. Frequency = 1MHz, VOUT = 2Vpk-pk, into 500 and 5pF load 4 EL2125 Typical Performance Curves Non-Inverting Frequency Response for Various RF Non-Inverting Frequency Response for Various RF 5 VS=5V AV=10 RL=500 CL=5pF RF=1k RF=499 0 RF=180 Normalized Gain (dB) Normalized Gain (dB) 5 VS=15V AV=10 RL=500 CL=5pF RF=1k 0 RF=499 RF=180 RF=100 -5 1M 10M RF=100 -5 1M 100M 200M 10M Frequency (Hz) Inverting Frequency Response for Various RF 300M Inverting Frequency Response for Various RF 6 2 RF=1k -2 RF=350 RF=499 Normalized Gain (dB) Normalized Gain (dB) 100M Frequency (Hz) 6 RF=200 -6 RF=97.6 -10 -14 1M VS=5V AV=-10 RL=560 CL=5pF 10M 100M RF=1k 2 -2 RF=200 -6 -10 -14 1M 300M RF=499 RF=350 RF=97.6 VS=15V AV=-10 RL=500 CL=5pF 10M Frequency (Hz) 100M 300M Frequency (Hz) Non-Inverting Frequency Response vs Gain Non-Inverting Frequency Response for Various Gain 5 5 VS=5V RL=500 CL=5pF RG=20 Normalized Gain (dB) Normalized Gain (dB) RF=700 AV=10 0 AV=50 -5 1M 10M Frequency (Hz) 5 AV=20 100M 200M VS=15V RL=500 CL=5pF RF=700 AV=10 0 AV=20 AV=50 -5 1M 10M Frequency (Hz) 100M 200M EL2125 Typical Performance Curves (Continued) Inverting Frequency Response vs Gain Inverting Frequency Response vs Gain 6 2 AV=-10 Normalized Gain (dB) Normalized Gain (dB) 6 -2 AV=-50 -6 -10 -14 1M VS=5V RL=500 CL=5pF RG=35 AV=-20 10M 100M AV=-10 0 AV=-50 -14 1M 300M VS=15V RL=500 CL=5pF RG=50 Frequency (Hz) Non-Inverting Frequency Response for Various Output Signal Levels 100M 300M Inverting Frequency Response for Various Output Signal Levels 6 VS=5V AV=10 RF=180 RL= 500 CL=5pF 3mVPP 30mVPP 500mVPP 0 4VPP 2VPP Normalized Gain (dB) Normalized Gain (dB) 10M Frequency (Hz) 5 -5 1M 10M 0 3.3VPP -14 1M 100M 200M VS=5V AV=-10 RF=350 RL= 500 CL=5pF 2.5VPP 1VPP 10M Frequency (Hz) 100M 300M Frequency (Hz) Non-Inverting Frequency Response for Various CL Non-Inverting Frequency Response for Various CL 5 5 VS=5V AV=10 RF=180 RL=500 VS=5V AV=10 RF=700 RL=500 CL=28.5pF Normalized Gain (dB) 3 500mVPP 250mVPP 1VPP Normalized Gain (dB) AV=-20 CL=16pF 1 -1 CL=5pF CL=1pF -3 -5 1M 10M Frequency (Hz) 6 100M 200M CL=17pF CL=11pF 0 CL=5pF CL=1.2pF -5 1M 10M Frequency (Hz) 100M 200M EL2125 Typical Performance Curves (Continued) Inverting Frequency Response for Various CL Inverting Frequency Response for Various CL 6 6 CL=29.4pF Normalized Gain (dB) Normalized Gain (dB) CL=29.4pF CL=16.4pF 0 CL=11.4pF CL=5.1pF -14 1M CL=1.2pF VS=5V AV=10 RF=350 RL=500 10M 100M 2 CL=16.4pF -2 CL=11.4pF CL=5.1pF -6 CL=1.2pF -10 -14 1M 300M VS=15V AV=10 RF=500 RL=500 10M Frequency (Hz) 100M 300M Frequency (Hz) Open Loop Gain and Phase Supply Current vs Supply Voltage 100 250 Phase Supply Current (mA) 150 9.6 60 50 40 -50 20 -150 2.4 -250 400M 0 VS=5V 0 10k 100k 10M 1M 100M Phase () Open Loop Gain (dB) 12 Gain 80 7.2 4.8 0 3 6 Frequency (Hz) 3dB Bandwidth vs Supply Voltage 12 15 Peaking vs Supply Voltage 250 3 2.5 Peaking (dB) AV=10 200 Bandwidth (MHz) 9 Supply Voltage (V) AV=-10 150 100 AV=-20 AV=20 AV=50 AV=-50 2 AV=10 AV=-10 1.5 1 50 0.5 AV=-20 AV=-50 0 2 4 6 8 10 VS (V) 7 12 14 16 AV=20 AV=50 0 2 4 6 8 10 VS (V) 12 14 16 EL2125 Typical Performance Curves (Continued) Small Signal Step Response Small Signal Step Response 20mV/div VS=15V RL=500 RF=180 AV=10 CL=5pF 20mV/div VS=5V RL=500 RF=180 AV=10 CL=5pF VINx2 VINx2 VO VO 10ns/div 10ns/div Large-Signal Step Response Large-Signal Step Response VS=15V RL=500 RF=180 AV=10 CL=5pF Output Voltage (0.5V/div) Output Voltage (0.5V/div) VS=5V RL=500 RF=180 AV=10 CL=5pF Time (20ns/div) Time (20ns/div) 1MHz Harmonic Distortion vs Output Swing 1MHz Harmonic Distortion vs Output Swing -40 -30 VS=5V RF=180 AV=10 RL=500 -60 VS=15V RF=180 AV=10 RL=500 -40 -50 Distortion (dBc) Distortion (dBc) -50 2nd HD -70 -80 3rd HD -90 2nd HD -60 -70 -80 3rd HD -90 -100 -100 -110 -110 0 1 2 3 4 VOUT (VPP) 8 5 6 7 0 5 10 15 VOUT (VPP) 20 25 EL2125 Typical Performance Curves (Continued) Total Harmonic Distortion vs Frequency Voltage and Current Noise vs Frequency VS=5V VO=2VPP AV=10 RF=180 RL=500 -40 -50 THD (dBc) Voltage Noise (nV/Hz), Current Noise -30 -60 -70 -80 -90 1k 10k 100k 1M 10M 100M 100 10 IN, VS=5V VN, VS=15V 1 IN, VS=15V VN, VS=5V 0.1 10 100 Frequency (Hz) 1k 10k 100k Frequency (Hz) Settling Time vs Accuracy Group Delay 60 14 VS=15V VS=15V VO=5VPP 10 Group Delay (ns) Settling Time (ns) 50 VS=5V VO=5VPP 40 30 VS=5V VO=2VPP 20 VS=15V VO=2VPP AV=20 6 2 AV=10 -2 10 0 0.1 -6 1 10 1 10 Accuracy (%) 100 400 Frequency (MHz) PSRR CMRR -10 110 -30 90 PSRR (dB) CMRR (dB) PSRR-50 -70 -99 PSRR+ 50 30 -110 10 70 100 1k 10k 100k Frequency (Hz) 9 1M 10M 100M 10 10k 100k 1M 10M Frequency (Hz) 100M 600M EL2125 Typical Performance Curves (Continued) Closed Loop Output Impedance vs Frequency Bandwidth vs Temperature 100 200 10 160 3.5 1 0.1 0.0 Bandwidth 120 2 Peaking 1.5 80 1 40 0.5 0.001 10k 100k 1M 10M 0 -40 100M 0 40 Frequency (Hz) 80 120 0 160 Temperature (C) Slew Rate vs Swing Supply Current vs Temperature 350 13 300 15VSR- 12 250 IS (mA) Slew Rate (V/s) 2.5 5VSR200 VS=15V 11 10 150 5VSR+ VS=5V 15VSR+ 100 0 5 10 15 9 -50 20 0 VOUT Swing (VPP) 50 100 150 100 150 Die Temperature (C) Offset Voltage vs Temperature Input Bias Current vs Temperature 0 -10 VS=5V -15 -1 IB+ (A) VOS (mV) VS=15V -20 -2 -25 -3 -50 0 50 Die Temperature (C) 10 100 150 -30 -50 0 50 Die Temperature (C) Peaking (dB) -3dB Bandwidth (MHz) ROUT () 3 EL2125 Typical Performance Curves (Continued) CMRR vs Temperature PSRR vs Temperature 120 110 VS=15V PSRR (dB) CMRR (dB) VS=5V 100 80 VS=5V 60 -50 0 50 100 VS=15V 90 100 80 -50 150 0 Die Temperature (C) Slew Rate vs Temperature 100 150 Positive Output Swing vs Temperature 240 3.9 VO=2VPP VS=15V 3.8 VOUTH (V) 220 SR (V/s) 50 Die Temperature (C) 200 VS=5V 180 3.7 VS=5V 3.6 160 -50 0 50 100 3.5 -50 150 0 Die Temperature (C) 50 100 150 Die Temperature (C) Negative Output Swing vs Temperature Positive Output Swing vs Temperature 13.6 -9.75 -9.8 VOUTL (V) VOUTH (V) VS=15V 13.5 VS=5V -9.85 -9.9 13.4 -50 0 50 Die Temperature (C) 11 100 150 -9.95 -50 0 50 Die Temperature (C) 100 150 EL2125 Typical Performance Curves (Continued) Loaded Negative Output Swing vs Temperature Negative Output Swing vs Temperature -13.4 -3.42 -3.44 VOUTL2 (V) VOUTL (V) -13.5 VS=15V -13.6 -3.46 VS=5V -3.48 -3.5 -13.7 -50 0 50 100 -3.52 -50 150 0 50 Die Temperature (C) 100 150 Die Temperature (C) Loaded Positive Output Swing vs Temperature Negative Output Swing vs Temperature -9.6 3.35 -10 VOUTH2 (V) VOUTL2 (V) -9.8 VS=15V -10.2 -10.4 VS=5V 3.3 -10.6 -10.8 -50 0 50 100 3.25 -50 150 0 50 12 1.2 1 Power Dissipation (W) 11.8 VS=15V 11.6 11.4 11.2 781mW 0.8 J 0.6 488mW A =1 0.4 SO 8 60 C /W SOT 235 6C /W J A =25 0.2 0 0 50 100 150 0 25 50 Package Power Dissipation vs Ambient Temperature JEDEC JESD51-7 High Effective Thermal Conductivity Test Board 1.8 1.6 1.4 1.2 1.136W J 1 SO 8 10 C /W A =1 0.8 0.6 543mW 0.4 0.2 SOT 23-5 J = A 230 C/W 0 0 25 50 75 85 100 Ambient Temperature (C) 12 75 85 100 Ambient Temperature (C) Die Temperature (C) Power Dissipation (W) VOUTH2 (V) 150 Package Power Dissipation vs Ambient Temperature JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board Loaded Positive Output Swing vs Temperature 11 -50 100 Die Temperature (C) Die Temperature (C) 125 150 125 150 EL2125 Pin Descriptions EL2125CW (5-PIN SOT-23) EL2125CS (8-PIN SO) PIN NAME PIN FUNCTION 1 6 VOUT Output EQUIVALENT CIRCUIT VS+ VOUT Circuit 1 2 4 VS- Supply 3 3 VINA+ Input VS+ VIN+ VIN- VSCircuit 2 4 2 VINA- Input 5 7 VS+ Supply Applications Information Product Description The EL2125 is an ultra-low noise, wideband monolithic operational amplifier built on Elantec's proprietary high speed complementary bipolar process. It features 0.83nV/Hz input voltage noise, 200V offset voltage, and 73dB THD. It is intended for use in systems such as ultrasound imaging where very small signals are needed to be amplified. The EL2125 also has excellent DC specifications: 200V VOS, 22A IB, 0.4A I OS, and 106dB CMRR. These specifications allow the EL2125 to be used in DC-sensitive applications such as difference amplifiers. Reference Circuit 2 compensation, the device can also operate at lower gain settings. The RC network shown in Figure 1 reduces the feedback gain at high frequency and thus maintains the amplifier stability. R values must be less than RF divided by 9 and 1 divided by 2RC must be less than 400MHz. RF R + C VOUT VIN FIGURE 1. Gain-Bandwidth Product Choice of Feedback Resistor, RF The EL2125 has a gain-bandwidth product of 800MHz at 5V. For gains greater than 20, its closed-loop -3dB bandwidth is approximately equal to the gain-bandwidth product divided by the small signal gain of the circuit. For gains less than 20, higher-order poles in the amplifier's transfer function contribute to even higher closed-loop bandwidths. For example, the EL2125 has a -3dB bandwidth of 175MHz at a gain of 10 and decreases to 40MHz at gain of 20. It is important to note that the extra bandwidth at lower gain does not come at the expenses of stability. Even though the EL2125 is designed for gain > 10 with external The feedback resistor forms a pole with the input capacitance. As this pole becomes larger, phase margin is reduced. This increases ringing in the time domain and peaking in the frequency domain. Therefore, RF has some maximum value which should not be exceeded for optimum performance. If a large value of RF must be used, a small capacitor in the few pF range in parallel with RF can help to reduce this ringing and peaking at the expense of reducing the bandwidth. Frequency response curves for various RF values are shown the in typical performance curves section of this data sheet. 13 EL2125 Noise Calculations The primary application for the EL2125 is to amplify very small signals. To maintain the proper signal-to-noise ratio, it is essential to minimize noise contribution from the amplifier. Figure 2 below shows all the noise sources for all the components around the amplifier. VIN R3 VR3 VN + - IN+ VR1 IN- VON R1 VR2 R2 FIGURE 2. VN is the amplifier input voltage noise IN+ is the amplifier positive input current noise IN- is the amplifier negative input current noise VRX is the thermal noise associated with each resistor: V RX = 4kTRx where: k is Boltzmann's constant = 1.380658 x 10-23 T is temperature in degrees Kelvin (273+ C) The total noise due to the amplifier seen at the output of the amplifier can be calculated by using the equation below (Figure 3). As the equation shows, to keep noise at a minimum, small resistor values should be used. At higher amplifier gain configuration where R2 is reduced, the noise due to IN-, R2, and R1 decreases and the noise caused by IN+, VN, and R3 starts to dominate. Because noise is summed in a rootmean-squares method, noise sources smaller than 25% of the largest noise source can be ignored. This can greatly simplify the formula and make noise calculation much easier to calculate. Output Drive Capability The EL2125 is designed to drive low impedance load. It can easily drive 6VP-P signal into a 100 load. This high output drive capability makes the EL2125 an ideal choice for RF, IF, and video applications. Furthermore, the EL2125 is current- V ON = limited at the output, allowing it to withstand momentary short to ground. However, the power dissipation with outputshorted cannot exceed the power dissipation capability of the package. Driving Cables and Capacitive Loads Although the EL2125 is designed to drive low impedance load, capacitive loads will decrease the amplifier's phase margin. As shown the in the performance curves, capacitive load can result in peaking, overshoot and possible oscillation. For optimum AC performance, capacitive loads should be reduced as much as possible or isolated with a series resistor between 5 to 20. When driving coaxial cables, double termination is always recommended for reflection-free performance. When properly terminated, the capacitance of the coaxial cable will not add to the capacitive load seen by the amplifier. Power Supply Bypassing And Printed Circuit Board Layout As with any high frequency devices, good printed circuit board layout is essential for optimum performance. Ground plane construction is highly recommended. Lead lengths should be kept as short as possible. The power supply pins must be closely bypassed to reduce the risk of oscillation. The combination of a 4.7F tantalum capacitor in parallel with 0.1F ceramic capacitor has been proven to work well when placed at each supply pin. For single supply operation, where pin 4 (VS-) is connected to the ground plane, a single 4.7F tantalum capacitor in parallel with a 0.1F ceramic capacitor across pins 7 (VS+) and pin 4 (VS-) will suffice. For good AC performance, parasitic capacitance should be kept to a minimum. Ground plane construction again should be used. Small chip resistors are recommended to minimize series inductance. Use of sockets should be avoided since they add parasitic inductance and capacitance which will result in additional peaking and overshoot. Supply Voltage Range and Single Supply Operation The EL2125 has been designed to operate with supply voltage range of 2.5V to 15V. With a single supply, the EL2125 will operate from +5V to +30V. Pins 4 and 7 are the power supply pins. The positive power supply is connected to pin 7. When used in single supply mode, pin 4 is connected to ground. When used in dual supply mode, the negative power supply is connected to pin 4. As the power supply voltage decreases from +30V to +5V, it becomes necessary to pay special attention to the input R 2 R 2 R 2 R 1 2 2 2 2 2 2 BW x VN x 1 + ------1- + IN- x R 1 + IN+ x R 3 x 1 + ------1- + 4 x K x T x R 1 + 4 x K x T x R 2 x ------- + 4 x K x T x R 3 x 1 + ------1- R 2 R 2 R 2 R 2 FIGURE 3. 14 EL2125 voltage range. The EL2125 has an input voltage range of 0.4V from the negative supply to 1.2V from the positive supply. So, for example, on a single +5V supply, the EL2125 has an input voltage range which spans from 0.4V to 3.8V. The output range of the EL2125 is also quite large, on a +5V supply, it swings from 0.4V to 3.6V. All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 15