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ZXTP25040DFH
40V SOT23 PNP medium power transistor
Summary
BVCEO > -40V
BVECO > -3V ;
IC(CONT) = -3A
RCE(sat) = 55 m ;
VCE(sat) < -85mV @ 1A ;
PD = 1.25W
Complementary part number ZXTN25040DFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
High power dissipation SOT23 package
High peak current
Low saturation voltage
3V reverse blocking voltage
Applications
MOSFET and IGBT gate driving
•DC - DC converters
Motor drive
High side driver
Ordering information
Device marking
024
Device Reel size
(inches)
Tape width Quantity per reel
ZXTP25040DFHTA 7 8mm 3000
C
E
B
C
E
B
Pinout - top view
ZXTP25040DFH
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Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5sec.
Parameter Symbol Limit Unit
Collector-base voltage VCBO -45 V
Collector-emitter voltage (forward blocking) VCEO -40 V
Emitter-collector voltage (reverse blocking) VECO -3 V
Emitter-base voltage VEBO -7 V
Continuous collector current (b) IC-3 A
Peak pulse current ICM -9 A
Power dissipation at TA =25°C (a)
linear derating factor
PD 0.73
5.84
W
mW/°C
Power dissipation at TA =25°C (b)
linear derating factor
PD1.05
8.4
W
mW/°C
Power dissipation at TA =25°C (c)
linear derating factor
PD1.25
9.6
W
mW/°C
Power dissipation at TA =25°C (d)
linear derating factor
PD1.81
14.5
W
mW/°C
Operating and storage temperature range Tj, Tstg -55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient (a) RJA 171 °C/W
Junction to ambient (b) RJA 119 °C/W
Junction to ambient (c) RJA 100 °C/W
Junction to ambient (d) RJA 69 °C/W
ZXTP25040DFH
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Characteristics
ZXTP25040DFH
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Electrical characteristics (at TAMB = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BVCBO -45 -75 V IC = -100A
Collector-emitter breakdown
voltage (base open)
BVCEO -40 -65 V IC = -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
Emitter-collector breakdown
voltage (reverse blocking)
BVECO -3 -8.7 V IE = -100uA
Emitter-base breakdown
voltage
BVEBO -7 -8.2 V IE = -100A
Collector cut-off current ICBO <-1 -50
-0.5
nA
A
VCB = -45V
VCB = -45V, Tamb= 100°C
Emitter cut-off current IEBO <-1 -50 nA VEB = -5.6V
Collector-emitter saturation
voltage
VCE(sat) -170 -260 mV IC = -1A, IB = -20mA (*)
-65 -85 mV IC = -1A, IB = -100mA (*)
-165 -220 mV IC = -3A, IB = -300mA (*)
Base-emitter saturation
voltage
VBE(sat) -930 -1000 mV IC = -3A, IB = -300mA (*)
Base-emitter turn-on voltage VBE(on) -830 -900 mV IC = -3A, VCE = -2V (*)
Static forward current
transfer ratio
hFE 300 450 900 IC = -10mA, VCE = -2V (*)
200 300 IC = -1A, VCE = -2V (*)
30 60 IC = -3A, VCE = -2V (*)
Transition frequency fT270 MHz IC = -50mA, VCE = -10V
f = 100MHz
Output capacitance COBO 17.4 pF VCB = -10V, f = 1MHz (*)
Turn-on time t(on) 75.5 ns VCC = -15V. IC = -750mA,
IB1 = IB2= -15mA.
Turn-off time t(off) 320 ns
ZXTP25040DFH
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Typical characteristics
ZXTP25040DFH
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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D-81541 München
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Zetex Semiconductors plc
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Oldham, OL9 9LL
United Kingdom
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Package outline - SOT23
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Min. Max.
A - 1.12 - 0.044 e1 1.90 NOM 0.075 NOM
A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104
b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055
c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236
D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024
e0.95 NOM0.037 NOM-----
E
e
L
e1
D
A
c
E1
L1
A1
b
3 leads