PD-94323E RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) IRHSNA57064 60V, N-CHANNEL Product Summary Part Number Radiation Level RDS(on) Q G IRHSNA57064 100K Rads (Si) 6.5m 160nC IRHSNA53064 300K Rads (Si) 6.5m 160nC IRHSNA54064 600K Rads (Si) 6.5m 160nC IRHSNA58064 1000K Rads (Si) 6.5m 160nC SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications. Features: n Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode n Ideal for Synchronous Rectifiers in DC-DC n n n n Converters up to 56A Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier Refer to IRHSLNA57064 for Lower Inductance Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR IF (AV)@ TC = 25C IF (AV)@ TC =100C TJ, TSTG Units Continuous Drain or Source Current Continuous Drain or Source Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Schottky and Body Diode Avg. Forward Current Schottky and Body Diode Avg. Forward Current Opeating and Storage Temperature Range 56* 56* 224 250 2.0 20 309 56 25 56* 56* -55 to 125 Pckg. Mounting Surface Temp. Weight 300 (for 5s) 3.3 (Typical) A W W/C V mJ A mJ A C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 10/26/15 IRHSNA57064 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS RDS(on) Min VGS(th) g fs IDSS Drain-to-Source Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units 60 -- -- -- -- 2.0 45 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Test Conditions 6.5 V m VGS = 0V, ID = 1.0mA VGS = 12V, ID = 45A 4.0 -- 90 50 V S A mA nC VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 45A VDS = 48V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 45A, VDS = 30V ns VDD = 30V, ID = 45A, VGS =12V, RG = 2.35 -- 100 -- -100 -- 160 -- 55 -- 65 -- 35 -- 125 -- 75 -- 50 7.03 -- nA nH Measured from center of drain pad to center of source pad Schottky Diode & Body Diode Ratings and Characteristics Parameter VSD Min Typ Max Units Diode Forward Voltage -- -- -- -- -- -- trr Reverse Recovery Time QRR Reverse Recovery Charge LS + LD Total Inductance ton Forward Turn-On Time -- 0.93 -- 0.90 -- 0.82 -- 100 -- 210 8.09 -- V ns nC nH Test Conditions TJ = -55C, ID= 45A, VGS = 0V TJ = 25C, ID= 45A, VGS = 0V T J = 125C, ID= 45A, VGS = 0V Tj = 25C, IF = 45A, di/dt 100A/s VDS 30V Measured from center of drain pad to center of source pad (for Schottky only) Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD Thermal Resistance Parameter RthJC RthJC Junction-to-Case (MOSFET) Junction-to-Case (Schottky) Min Typ Max -- -- -- -- 0.5 0.7 Units Test Conditions C/W Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHSNA57064 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Parameter Min BVDSS V GS(th) IGSS IGSS IDSS RDS(on) VSD 1000K Rads (Si)2 Units Up to 600K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Diode Forward Voltage Max Test Conditions Min Max 60 2.0 -- -- -- -- -- 4.0 100 -100 10 6.1 60 1.5 -- -- -- -- -- 4.0 100 -100 25 7.1 A m VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS = 48V, VGS =0V VGS = 12V, ID = 45A -- 1.3 -- 1.3 V VGS = 0V, IS = 45A V nA 1. Part numbers IRHSNA57064, IRHSNA53064 and IRHSNA54064 2. Part number IRHSNA58064 International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area Ion VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 37.4 60 60 60 52 34 29.2 46 46 35 25 15 106 35 35 27 20 14 Energy (MeV) 300 300 2068 VDS Kr Xe Au LET (MeV/(mg/cm2)) 39.2 63.3 86.6 70 60 50 40 30 20 10 0 Kr Xe Au 0 -5 -10 -15 -20 VGS Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHSNA57064 Pre-Irradiation 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V 10 5.0V 1 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 BOTTOM 5.0V 10 20s PULSE WIDTH Tj = 125C 1 100 0.1 VDS , Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (A) 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics T J = 125C 100 T J = 25C 10 VDS = 25V 20s PULSE WIDTH 1 ID = 56A 1.5 1.0 0.5 VGS = 12V 0.0 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V 10 -60 -40 -20 0 20 40 60 80 100 120 140 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com IRHSNA57064 Pre-Irradiation VGS , Gate-to-Source Voltage (V) 20 ID = 45A VDS = 48V VDS = 30V VDS = 12V 16 12 8 4 0 FOR TEST CIRCUIT SEE FIGURE 5b 13 0 50 100 150 200 250 QG , Total Gate Charge (nC) Fig 5. Typical Gate Charge Vs. Gate-to-Source Voltage Current Regulator Same Type as D.U.T. 50K QG 12 V QGS 12V .2F .3F QGD D.U.T. + V - DS VGS VG 3mA Charge Fig 5a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 5b. Gate Charge Test Circuit 5 IRHSNA57064 Pre-Irradiation 140 RD VDS LIMITED BY PACKAGE V GS 120 D.U.T. RG + - VDD ID, Drain Current (A) 100 VGS 80 Pulse Width 1 s Duty Factor 0.1 % 60 Fig 7a. Switching Time Test Circuit 40 VDS 20 90% 0 25 50 75 100 125 T C , Case Temperature (C) Fig 6. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 7b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET 6 www.irf.com Pre-Irradiation IRHSNA57064 EAS , Single Pulse Avalanche Energy (mJ) 600 ID 28A 41.5A 56A TOP 500 BOTTOM 400 300 200 100 0 25 50 75 100 125 Starting T J , Junction Temperature (C) Fig 9. Maximum Avalanche Energy Vs. Drain Current V(BR)DSS 15V tp L VDS D.U.T. RG VGS 20V IAS tp DRIVER + V - DD 0.01 Fig 9a. Unclamped Inductive Test Circuit www.irf.com A I AS Fig 9b. Unclamped Inductive Waveforms 7 IRHSNA57064 Pre-Irradiation MOSFET Body Diode & Schottky Diode Characteristics Instantaneous Forward Current - I F (A) 100 10 Tj = 125C Tj = 25C Tj = -55C 1 0 0.2 0.4 0.6 0.8 1 Forward Voltage Drop - V F (V) Fig. 10 - Typical Forward Voltage Drop Characterstics Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky 8 www.irf.com Pre-Irradiation IRHSNA57064 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature Pulse width 300 s; Duty Cycle 2% 50% Duty Cycle, Rectangular VDD = 25V, starting TJ = 25C, L= 0.2 mH Peak IL = 56A, VGS = 12V Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 48 volt V DS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Specified Radiation Characteristics are for Radiation Hardened MOSFET die only. Case Outline and Dimensions -- SMD-2 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/2015 www.irf.com 9