10/26/15
RAD-HARD
IRHSNA57064
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
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60V, N-CHANNEL
Features:
nCo-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
nIdeal for Synchronous Rectifiers in DC-DC
Converters up to 56A Output
nLow Conduction Losses
nLow Switching Losses
nLow Vf Schottky Rectifier
nRefer to IRHSLNA57064 for Lower Inductance
For footnotes refer to the last page
* Current is limited by package
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Product Summary
Part Number Radiation Level RDS(on) QG
IRHSNA57064 100K Rads (Si) 6.5mΩ 160nC
IRHSNA53064 300K Rads (Si) 6.5mΩ 160nC
IRHSNA54064 600K Rads (Si) 6.5mΩ 160nC
IRHSNA58064 1000K Rads (Si) 6.5mΩ 160nC
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain or Source Current 56*
ID @ VGS = 12V, TC = 100°C Continuous Drain or Source Current 56*
IDM Pulsed Drain Current 224
PD @ TC = 25°C Max. Power Dissipation 250 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 309 mJ
IAR Avalanche Current 56 A
EAR Repetitive Avalanche Energy 25 mJ
IF (AV)@ TC = 25°C Schottky and Body Diode Avg. Forward Current 56*
IF (AV)@ TC =100°C Schottky and Body Diode Avg. Forward Current 56*
TJ, TSTG Opeating and Storage Temperature Range -55 to 125
Pckg. Mounting Surface Temp. 300 (for 5s)
Weight 3.3 (Typical) g
Pre-Irradiation
A
A
°C
PD-94323E
IRHSNA57064
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Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 1.0mA
RDS(on) Static Drain-to-Source On-State — — 6.5 mΩ VGS = 12V, ID = 45A
Resistance
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 45 — — S VDS = 15V, IDS = 45A
IDSS Zero Gate Voltage Drain Current — — 90 VDS = 48V, VGS = 0V
— — 50 mA VDS = 48V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 160 VGS =12V, ID = 45A,
Qgs Gate-to-Source Charge — — 55 nC VDS = 30V
Qgd Gate-to-Drain (‘Miller’) Charge — — 65
td(on) Turn-On Delay Time — — 35 VDD = 30V, ID = 45A,
trRise Time — — 125 VGS =12V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 75
tfFall Time — — 50
LS + LDTotal Inductance — 7.03 — Measured from center of drain
pad to center of source pad
nA
nH
ns
µA
Schottky Diode & Body Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
VSD Diode Forward Voltage — — 0.93 TJ = -55°C, ID= 45A, VGS = 0V
— — 0.90 TJ = 25°C, ID= 45A, VGS = 0V
— — 0.82 TJ = 125°C, ID= 45A, VGS = 0V
t
rr Reverse Recovery Time — — 100 ns Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 210 nC VDS ≤ 30V
LS + LDTotal Inductance — 8.09 — nH Measured from center of drain pad to
center of source pad (for Schottky only)
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD
V
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case (MOSFET) — — 0.5
RthJC Junction-to-Case (Schottky) — — 0.7 °C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
IRHSNA57064
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International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-
tions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHSNA57064, IRHSNA53064 and IRHSNA54064
2. Part number IRHSNA58064
Fig a. Typical Single Event Effect, Safe Operating Area
International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Typical Single Event Effect Safe Operating Area
Ion LET Energy Range VDS (V)
(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Kr 39.2 300 37.4 60 60 60 52 34
Xe 63.3 300 29.2 46 46 35 25 15
Au 86.6 2068 106 35 35 27 20 14
0
10
20
30
40
50
60
70
0 -5 -10 -15 -20
VGS
VDS
Kr
Xe
Au
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter Up to 600K Rads(Si)1 1000K Rads (Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 60 — 60 — V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
IDSS Zero Gate Voltage Drain Current — 10 — 25 µA VDS= 48V, VGS =0V
RDS(on) Static Drain-to-Source — 6.1 — 7.1 mΩ VGS = 12V, ID = 45A
On-State Resistance (TO-3)
VSD Diode Forward Voltage — 1.3 — 1.3 V VGS = 0V, IS = 45A
IRHSNA57064
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Pre-Irradiation
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 3. Typical Transfer Characteristics
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
20µs PULSE WIDTH
Tj = 125°C
5.0V
VGS
TOP 15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
20µs PULSE WIDTH
Tj = 25°C
5.0V
VGS
TOP 15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
-60 -40 -20 020 40 60 80 100 120 140
TJ , Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VGS = 12V
ID = 56A
5678910
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VDS = 25V
20µs PULSE WIDTH
TJ = 125°C
TJ = 25°C
IRHSNA57064
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Fig 5. Typical Gate Charge Vs.
Gate-to-Source Voltage
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 5b. Gate Charge Test Circuit
QG
QGS QGD
VG
Charge
12 V
Fig 5a. Basic Gate Charge Waveform
050 100 150 200 250
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
45A
V = 12V
DS
V = 30V
DS
V = 48V
DS
Pre-Irradiation
5b
IRHSNA57064
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Pre-Irradiation
Fig 7a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 7b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET
Fig 6. Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VGS
25 50 75 100 125
TC , Case Temperature (°C)
0
20
40
60
80
100
120
140
ID, Drain Current (A)
LIMITED BY PACKAGE
IRHSNA57064
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Fig 9. Maximum Avalanche Energy
Vs. Drain Current
Fig 9b. Unclamped Inductive Waveforms
Fig 9a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
Pre-Irradiation
VGS
25 50 75 100 125
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 28A
41.5A
BOTTOM 56A
IRHSNA57064
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Pre-Irradiation
MOSFET Body Diode & Schottky Diode Characteristics
Fig. 10 - Typical Forward Voltage Drop Characterstics
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
0 0.2 0.4 0.6 0.8 1
Forward Voltage Drop - V F (V)
1
10
100
Instantaneous Forward Current - IF (A)
Tj = -55°C
Tj = 125°C
Tj = 25°C
IRHSNA57064
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Case Outline and Dimensions — SMD-2
Repetitive Rating; Pulse width limited by
maximum junction temperature
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
50% Duty Cycle, Rectangular
Footnotes:
VDD = 25V, starting TJ = 25°C, L= 0.2 mH
Peak IL = 56A, VGS = 12V
Pre-Irradiation
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Specified Radiation Characteristics are for
Radiation Hardened MOSFET die only.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2015
