BFP620 H7764 - Infineon Technologies

2010-09-211

BFP620

NPN Silicon Germanium RF Transistor

• Highly linear low noise RF transistor

• Provides outstanding performance

for a wide range of wireless applications

• Based on Infineon's reliable high volume

SiGe:C technology

• Ideal for CDMA and WLAN applications

• Collector design provides high linearity of

14.5 dBm OP1dB for low voltage application

• Maximum stable gain

Gms = 21.5 dB at 1.8 GHz

Gma = 11 dB at 6 GHz

• Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz

Outstanding noise figure NFmin = 1.3 dB at 6 GHz

• Accurate SPICE GP model enables effective

design in process

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFP620 R2s 1=B 2=E 3=C 4=E - - SOT343

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BFP620

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

TA > 0 °C

≤ 0 °C

VCEO

2.3

2.1

Collector-emitter voltage VCES 7.5

Collector-base voltage VCBO 7.5

Emitter-base voltage VEBO 1.2

Collector current IC80 mA

Base current IB3

Total power dissipation1)

TS ≤ 95 °C

Ptot 185 mW

Junction temperature TJ150 °C

Ambient temperature T

-65 ... 150

Storage temperature TSt

-65 ... 150

1TS is measured on the emitter lead at the soldering point to pcb

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1) RthJS ≤ 300 K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO 2.3 2.8 - V

Collector-emitter cutoff current

VCE = 7.5 V, VBE = 0

VCE = 5 V, VBE = 0

ICES

0.001

0.04

µA

Collector-base cutoff current

VCB = 5 V, IE = 0

ICBO - 1 40 nA

Emitter-base cutoff current

VEB = 0.5 V, IC = 0

IEBO - 10 900

DC current gain

IC = 50 mA, VCE = 1.5 V, pulse measured

hFE 110 180 270 -

1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance

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BFP620

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 50 mA, VCE = 1.5 V, f = 1 GHz

fT- 65 - GHz

Collector-base capacitance

VCB = 2 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb - 0.12 0.2 pF

Collector emitter capacitance

VCE = 2 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce - 0.22 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb - 0.46 -

Minimum noise figure

IC = 5 mA, VCE = 1.5 V, f=1.8GHz ZS = ZSopt

IC = 5 mA, VCE = 1.5 V, f= 6GHz ZS = ZSopt

NFmin

0.7

1.3

Power gain, maximum stable1)

IC = 50 mA, VCE = 1.5 V, f = 1.8GHz ,

ZS = ZSopt, ZL = ZLopt

Gms - 21.5 - dB

Power gain, maximum available

IC = 50 mA, VCE = 1.5 V, f = 6 GHz,

ZS = ZSopt, ZL = ZLopt

Gma - 11 - dB

Transducer gain

IC = 50 mA, VCE =1.5 V, ZS=ZL=50 Ω

f = 1.8 GHz

f = 6 GHz

|S21e|2

9.5

Third order intercept point at output2)

VCE = 2 V, IC = 50 mA, ZS=ZL=50 Ω, f=1.8GHz

IP3- 25.5 - dBm

1dB compression point at output

IC = 50 mA, VCE = 2 V, ZS =ZL=50 Ω, f=1.8 GHz

P-1dB - 14.5 -

1Gms = |S21 / S12|

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

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BFP620

Total power dissipation Ptot = ƒ(TS)

0 20 40 60 80 100 120 °C 150

100

120

140

160

200

Ptot

Permissible Pulse Load RthJS = ƒ(tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

°C

K/W

RthJS

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.005

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

°C

Ptotmax/ PtotDC

D = 0

0.005

0,01

0,02

0,05

0,1

0,2

0,5

Collector-base capacitance Ccb= ƒ(VCB)

f = 1MHz

0 1 2 3 4 5 V7

VCB

0.05

0.1

0.15

0.2

0.25

0.3

0.4

CCB

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BFP620

Third order Intercept Point IP3=ƒ(IC)

(Output, ZS = ZL=50 Ω)

VCE = parameter, f = 900MHz

0 10 20 30 40 50 60 70 80 mA 100

dBm

IP3

0.8V

1.3V

1.8V

2.3V

Third order Intercept Point IP3 = ƒ(IC)

(Output, ZS = ZL = 50 Ω )

VCE = parameter, f = parameter

Transition frequency fT= ƒ(IC)

ƒ = 1 GHz

VCE = parameter in V

0 10 20 30 40 50 60 70 80 mA 100

GHz

0.3

0.5

0.8

1.3 to 2.3

Power gain Gma, Gms = ƒ(f)

|S21|2 = ƒ (f)

VCE = 1.5 V, IC = 50 mA

01234GHz 6

|S21|²

Gms

Gma

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BFP620

Power gain Gma, Gms = ƒ(IC)

VCE = 1.5V

f = parameter in GHz

0 10 20 30 40 50 60 70 mA 90

0.9

1.8

2.4

Power gain Gma, Gms = ƒ(VCE)

IC = 50 mA

f = parameter in GHz

0.2 0.6 1 1.4 1.8 V2.6

VCE

-5

0.9

1.8

2.4

Minimum noise figure NFmin = ƒ(IC)

VCE = 2 V, ZS = ZSopt

Minimum noise figure NFmin = ƒ(f)

VCE = 2 V, ZS = ZSopt

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BFP620

Source impedance for min.

noise figure vs. frequency

VCE = 2 V, IC = 6 mA / 50 mA

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BFP620

SPICE GP (Gummel-Poon)

For the SPICE Gummel Poon (GP) model as well as for the S-parameters

(including noise parameters) please refer to our internet website

www.infineon.com/rf.models.

Please consult our website and download the latest versions before actually

starting your design. You find the BFP620 SPICE GP model in the internet

in MWO- and ADS-format, which you can import into these circuit simulation tools

very quickly and conveniently. The model already contains the package parasitics

and is ready to use for DC and high frequency simulations. The terminals of the

model circuit correspond to the pin configuration of the device. The model

parameters have been extracted and verified up to 10 GHz using typical devices.

The BFP620 SPICE GP model reflects the typical DC- and RF-performance

within the limitations which are given by the SPICE GP model itself. Besides the DC

characteristics all S-parameters in magnitude and phase, as well as noise figure

(including optimum source impedance, equivalent noise resistance and flicker noise)

and intermodulation have been extracted.

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BFP620

Package SOT343

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

2005, June

Date code (YM)

BGA420

Type code

0.2

2.15

2.3

1.1

Pin 1

0.6

0.8

1.6

1.15

0.9

1.25

±0.1

0.1 MAX.

2.1

±0.1

0.15

+0.1

-0.05

0.3

+0.1

±0.2

±0.1

0.9

+0.1

0.6

0.2

1.3

-0.05

0.15

0.1

0.1 MIN.

Pin 1

Manufacturer

2010-09-2110

BFP620

Datasheet Revision History: 21 September 2010

This datasheet replaces the revision from 20 April 2007.

The product itself has not been changed and the device characteristics remain unchanged.

Only the product description and information available in the datasheet has been expanded

and updated.

Previous Revision 20 April 2007

Page Subject (changes since last revision)

2 Typical values for leakage currents included, values for maximum leakage

currents reduced

5 @ 2400 MHz OIP3 curves added

7 charts added describing noise figure

2010-09-2111

BFP620

Edition 2009-11-16

Published by

Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG

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of conditions or characteristics. With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of

the device, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,

please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon

Technologies Office.

Infineon Technologies components may be used in life-support devices or systems

only with the express written approval of Infineon Technologies, if a failure of such

components can reasonably be expected to cause the failure of that life-support

device or system or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body or

to support and/or maintain and sustain and/or protect human life. If they fail, it is

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endangered.