183 RadHard MSI Logic
UT54ACS264/UT54ACTS264
Radiation-Hardened
Look-Ahead Carry Generators for Counters
FEATURES
Performs look-ahead carry across n-bit counters
Accommodates active-high or active-low carry
Improves cascaded counters system performance
radiation-hardened CMOS
- Latchup immune
High speed
Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package
- 16-pin DIP
- 16-lead flatpack
DESCRIPTION
The UT54ACS264 and the UT54ACTS264 are look-ahead gen-
erators designed specifically to perform a carry-anticipate
across any number of n-bit counters, thus increasing system
clock frequency. A carry enable CE, and carry outputs RCOA
and RCOB are provided for n-bit cascading.
Use the counter with either active-high-carry or active-low-car-
ry counters. For active-high-carry counters, CE is active high,
the A set of inputs and output RCOA are used. The B set of
inputs are connected to a low logic level. For active-low-carry
counters, CE is active low, the B set of inputs and output RCOB
are used. The A set of inputs are connected to a high logic level.
The devices are characterized over full military temperature
range of -55 C to +125 C.
PINOUTS 16-Pin DIP
Top View
16-Lead Flatpack
Top View
1
2
3
4
5
7
6
16
15
14
13
12
10
11
A1
B1
A0
B0
A3
B3
RCOB
VDD
B2
A2
CE
C0
C1
RCOA
8 9
VSS C2
1
2
3
4
5
7
6
16
15
14
13
12
10
11
VDD
A1
B1
A0
B0
A3
B3
RCOB
B2
A2
CE
C0
C1
RCOA
VSS C2
8 9
RadHard MSI Logic 184
UT54ACS264/UT54ACTS264
LOGIC SYMBOL
Notes:
1. Logic symbols in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
FUNCTION TABLE FOR C0 OUTPUT
FUNCTION TABLE FOR C1 OUTPUT
FUNCTION TABLE FOR RCOB OUTPUT
FUNCTION TABLE FOR C2 OUTPUT
FUNCTION TABLE FOR RCOA OUTPUT
(12) C0
(11) C1
(9) C2
(10) RCOA
(7) RCOB
1
1
1
1
1
1,3
2,3
1,3,5
2,3,5
4,5
1,3,5,7
2,3,5,7
4,5,7
6,7
1,3,5,7,
4,5,7,9
6,7,9
8,9
1
2
4
6
8
(13)
CE
(4)
B0
(3)
A0
(2)
B1
(1)
A1
(15)
B2
(14)
A2
(6)
B3
(5)
A3 G9
Z8
G7
Z6
G5
Z4
G3
Z2
Z1
ACTIVE-HIGH INPUTS
(12) C0
(11) C1
(9) C2
(10) RCOA
(7) RCOB
1
1
1
1
1,2
3
5
3,4
1,2,4
7
5,6
3,4,6
1,2,4,6
9
7,8
5,6,8
3,4,6,8
1,2,4,6,8
(13)
CE
(4)
B0
(3)
A0
(2)
B1
(1)
A1
(15)
B2
(14)
A2
(6)
B3
(5)
A3 Z9
G8
Z7
G6
Z5
G4
Z3
G2
Z1
ACTIVE-LOW INPUTS
1,4,6,8
INPUTS OUTPUT
A0 B0 CE C0
H H XH
HXH H
LX X L
XL L L
INPUTS OUTPUT
A1 A0 B1 B0 CE C1
HXHX X H
H H XHXH
H H X X H H
LXXXX L
XL L X X L
X X L L L L
INPUTS OUTPUT
B3 B2 B1 B0 CE RCOB
HXXXX H
XHXXX H
X X HX X H
XXXHXH
XXXXH H
LLLLL L
INPUTS OUTPUT
A2 A1 A0 B2 B1 B0 CE C2
HX X HXXX H
H H X X HX X H
HHHX X HXH
HHHXXXH H
LXXXXXX L
XLXLXXX L
X X LLLX X L
XXXLLLL L
INPUTS OUTPUT
A3 A2 A1 A0 B3 B2 B1 CE RCOA
HX X X HX X X H
H H X X X HX X H
H H H XXXHXH
H H H H X X X H H
LX X X X X X X L
XLX X LX X X L
X X LXL L X X L
X X X L L L L XL
X X X X L L L L L
185 RadHard MSI Logic
UT54ACS264/UT54ACTS264
LOGIC DIAGRAM
(10) RCOA
RCOB
(7)
(9) C2
(11) C1
(12) C0
(13)
(6)
(5)
(15)
(14)
(2)
(1)
(4)
(3)
CE
B3
A3
A2
B1
A1
B0
A0
B2
RadHard MSI Logic 186
UT54ACS264/UT54ACTS264
RADIATION HARDNESS SPECIFICATIONS 1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER LIMIT UNITS
Total Dose 1.0E6 rads(Si)
SEU Threshold 280 MeV-cm2/mg
SEL Threshold 120 MeV-cm2/mg
Neutron Fluence 1.0E14 n/cm2
SYMBOL PARAMETER LIMIT UNITS
VDD Supply voltage -0.3 to 7.0 V
VI/O Voltage any pin -.3 to VDD +.3 V
TSTG Storage Temperature range -65 to +150 C
TJMaximum junction temperature +175 C
TLS Lead temperature (soldering 5 seconds) +300 C
JC Thermal resistance junction to case 20 C/W
IIDC input current 10 mA
PDMaximum power dissipation 1W
SYMBOL PARAMETER LIMIT UNITS
VDD Supply voltage 4.5 to 5.5 V
VIN Input voltage any pin 0 to VDD V
TCTemperature range -55 to + 125 C
187 RadHard MSI Logic
UT54ACS264/UT54ACTS264
DC ELECTRICAL CHARACTERISTICS 7
(VDD = 5.0V 10%; VSS = 0V 6, -55 C < TC < +125 C)
SYMBOL PARAMETER CONDITION MIN MAX UNIT
VIL Low-level input voltage 1
ACTS
ACS
0.8
.3VDD
V
VIH High-level input voltage 1
ACTS
ACS
.5VDD
.7VDD
V
IIN Input leakage current
ACTS/ACS VIN = VDD or VSS -1 1A
VOL Low-level output voltage 3
ACTS
ACS IOL = 8mA
IOL = 100 A0.40
0.25 V
VOH High-level output voltage 3
ACTS
ACS IOH = -8mA
IOH = -100 A.7VDD
VDD - 0.25 V
IOS Short-circuit output current 2 ,4
ACTS/ACS VO = VDD and VSS -200 200 mA
IOL Output current10
(Sink)
VIN = VDD or VSS
VOL = 0.4V
8mA
IOH Output current10
(Source)
VIN = VDD or VSS
VOH = VDD - 0.4V
-8 mA
Ptotal Power dissipation 2, 8, 9 CL = 50pF 2.2 mW/
MHz
IDDQ Quiescent Supply Current VDD = 5.5V 10 A
IDDQ Quiescent Supply Current Delta
ACTS For input under test
VIN = VDD - 2.1V
For all other inputs
VIN = VDD or VSS
VDD = 5.5V
1.6 mA
CIN Input capacitance 5 = 1MHz @ 0V 15 pF
COUT Output capacitance 5 = 1MHz @ 0V 15 pF
RadHard MSI Logic 188
UT54ACS264/UT54ACTS264
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but
are guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
AC ELECTRICAL CHARACTERISTICS 2
(VDD = 5.0V 10%; VSS = 0V 1, -55 C < TC < +125 C)
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose 1E6 rads(Si).
SYMBOL PARAMETER MINIMUM MAXIMUM UNIT
tPLH CE to C0, C1, C2 1 17 ns
tPHL CE to C0, C1, C2 1 16 ns
tPLH An or Bn to C0, C1, C2 1 15 ns
tPHL An or Bn to C0, C1, C2 1 17 ns
tPLH An, Bn or CE to RCOA 1 15 ns
tPHL An, Bn or CE to RCOA 1 15 ns
tPLH Bn or CE to RCOB 1 12 ns
tPHL Bn or CE to RCOB 1 15 ns
