IPD25N06S2-40
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C, VGS=10 V 29 A
TC=100 °C,
VGS=10 V2) 21
Pulsed drain current1) ID,pulse TC=25 °C 116
Avalanche energy, single pulse EAS ID=25A 80 mJ
Gate source voltage VGS ±20 V
Power dissipation Ptot TC=25 °C 68 W
Operating and storage temperature Tj, Tstg -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
VDS 55 V
RDS(on),max (SMD version) 40 m
ID29 A
Product Summary
PG-TO252-3-11
Type Package Marking
IPD25N06S2-40 PG-TO252-3-11 2N0640
Rev. 1.0 page 1 2006-07-18
IPD25N06S2-40
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 2.2 K/W
Thermal resistance, junction -
ambient, leaded RthJA - - 100
SMD version, device on PCB RthJA minimal footprint - - 75
6 cm2 cooling area2) --50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID= 1 mA 55 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=26 µA 2.1 3.0 4.0
Zero gate voltage drain current IDSS
VDS=55 V, VGS=0 V,
Tj=25 °C - 0.01 1 µA
VDS=55 V, VGS=0 V,
Tj=125 °C1) - 1 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=13 A, - 28.6 40 m
Values
Rev. 1.0 page 2 2006-07-18
IPD25N06S2-40
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics1)
Input capacitance Ciss - 513 - pF
Output capacitance Coss - 163 -
Reverse transfer capacitance Crss -61-
Turn-on delay time td(on) -8-ns
Rise time tr-20-
Turn-off delay time td(off) -18-
Fall time tf-19-
Gate Char
g
e Characteristics1)
Gate to source charge Qgs - 2.9 4 nC
Gate to drain charge Qgd - 6.3 8
Gate charge total Qg- 14.0 18
Gate plateau voltage Vplateau - 5.7 - V
Reverse Diode
Diode continous forward current1) IS- - 29 A
Diode pulse current1) IS,pulse - - 116
Diode forward voltage VSD
VGS=0 V, IF=25 A,
Tj=25 °C - 0.9 1.3 V
Reverse recovery time1) trr
VR=30 V, IF=IS,
diF/dt=100 A/µs -31-ns
Reverse recovery charge1) Qrr
VR=30 V, IF=IS,
diF/dt=100 A/µs -40-nC
1) Defined by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
TC=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=30 V, VGS=10 V,
ID=25 A, RG=22
VDD=44 V, ID=25 A,
VGS=0 to 10 V
Rev. 1.0 page 3 2006-07-18
IPD25N06S2-40
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS 6 V ID = f(TC); VGS 10 V
3 Safe operating area 4 Max. transient thermal impedance
ID = f(VDS); TC = 25 °C; D = 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
100
10-1
10-2
10-3
10-4
10-5
10-6
10-7
100
10-1
10-2
10-3
tp [s]
ZthJC [K/W]
0
10
20
30
40
50
60
70
0 50 100 150 200
TC [°C]
Ptot [W]
0
10
20
30
0 50 100 150 200
TC [°C]
ID [A]
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
VDS [V]
ID [A]
Rev. 1.0 page 4 2006-07-18
IPD25N06S2-40
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID = f(VDS); Tj = 25 °C RDS(on) = (ID); Tj = 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. Forward transconductance
ID = f(VGS); VDS = 6V gfs = f(ID); Tj = 25°C
parameter: Tjparameter: gfs
5 V
5.5 V
6 V
6.5 V
7 V
10 V
0
10
20
30
40
50
60
01234567
VDS [V]
ID [A]
5.5 V 6 V 6.5 V
7 V
10 V
20
30
40
50
60
70
80
90
100
110
120
0 102030405060
ID [A]
RDS(on) [m]
25 °C
175 °C
-55 °C
0
10
20
30
40
50
234567
VGS [V]
ID [A]
0
4
8
12
16
20
24
28
32
0 1020304050
ID [A]
gfs [S]
Rev. 1.0 page 5 2006-07-18
IPD25N06S2-40
9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(ON) = f(Tj)VGS(th) = f(Tj); VGS = VDS
parameter: ID = 13 A; VGS = 10 V parameter: ID
11 Typ. capacitances 12 Typical forward diode characteristicis
C= f(VDS); VGS = 0 V; f = 1 MHz IF = f(VSD)
parameter: Tj
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD [V]
IF [A]
Ciss
Coss
Crss
102
103
104
0 5 10 15 20 25 30
VDS [V]
C [pF]
26 µA
130 µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
10
20
30
40
50
60
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [m]
Rev. 1.0 page 6 2006-07-18
IPD25N06S2-40
13 Typical avalanche energy 14 Typ. gate charge
EAS = f(Tj)VGS = f(Qgate); ID = 25 A pulsed
parameter: ID
15 Typ. drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS) = f(Tj); ID = 1 mA
25 A
12.5 A
6.25 A
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150 175
Tj [°C]
EAS [mJ]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
11 V
44 V
0
2
4
6
8
10
12
02468101214
Qgate [nC]
VGS [V]
50
52
54
56
58
60
62
64
66
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
Rev. 1.0 page 7 2006-07-18
IPD25N06S2-40
Published by
Infineon Technologies AG
Am Campeon 1-12
D-85579 Neubiberg
©
Infineon Technologies AG 1999
All Rights Reserved.
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a guarantee of characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For information on the types in question, please contact your nearest Infineon Technologies Office.
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Rev. 1.0 page 8 2006-07-18