Advanced Power N-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Lower Gate Charge BVDSS 150V
▼ Simple Drive Requirement RDS(ON) 150mΩ
▼ Surface Mount Package ID2.6A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient350 ℃/W
Data and specifications subject to change without notice 1
AP15T15GM-HF
-55 to 150
201105031
Halogen-Free Product
-55 to 150
Parameter Rating
Drain-Source Voltage 150
Total Power Dissipation 2.5
Gate-Source Voltage +20
Continuous Drain Current3, VGS @ 10V 2.6
Continuous Drain Current3, VGS @ 10V 2.1
Pulsed Drain Current110
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
SSSG
DDDD
SO-8
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 150 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=2A - - 150 mΩ
VGS=4.5V, ID=1A - - 250 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=2A - 4 - S
IDSS Drain-Source Leakage Current VDS=120V, VGS=0V - - 1 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge ID=2A - 22.5 36 nC
Qgs Gate-Source Charge VDS=75V - 3.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 7.5 - nC
td(on) Turn-on Delay Time VDS=75V - 8 - ns
trRise Time ID=1A - 5.5 - ns
td(off) Turn-off Delay Time RG=3.3Ω-25-ns
tfFall Time VGS=10V - 10 - ns
Ciss Input Capacitance VGS=0V - 1050 1680 pF
Coss Output Capacitance VDS=15V - 115 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF
RgGate Resistance f=1.0MHz - 1.2 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1.9A, VGS=0V - - 1.3 V
trr Reverse Recovery Time IS=8A, VGS=0V, - 55 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 140 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP15T15GM-HF
A
P15T15GM-H
F
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
10
20
30
0 4 8 12 16 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
8.0V
7.0V
6.0V
VG=5.0V
0
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj ,Junction Temperature ( oC)
Normalized VGS(th) (V)
0
4
8
12
16
20
0 4 8 12 16 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC10V
8.0V
7.0V
6.0V
VG=5.0V
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj=25oCTj=150oC
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
VG=10V
ID=2A
ID=1mA
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
ID=1mA
AP15T15GM-H
F
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0
400
800
1200
1600
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
0 5 10 15 20 25 30
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
VDS =75V
VDS =90V
V DS =120V
I
D=2A
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0.001
0.01
0.1
1
10
100
0.01 0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
tT
Rthja = 125℃/W
0.02
Operation in this area
limited by RDS(ON)
