SURFACE MOUNT GLASS PASSIVATED
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
FEATURES
* Fast switching
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.015 gram
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwis e specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS
(At TA = 25oC unless otherwise noted)
HSM101
THRU
HSM106
MELF
MAXIMUM RATINGS
(At TA = 25oC unless otherwise noted)
HIGH EFFICIENCY SILICON RECTIFIER
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
2001-4
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps1.0
30
15 -65 to + 175
Amps
pF
0
C
UNITS
HSM101 HSM104
HSM102 HSM105 HSM106HSM103
50 300
100 400 600200
35 210
70 280 420140
50 300100 400 600200
12
Maximum Full Load Reverse Current Average,
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
UNITS
uAmps
nSec
Maximum DC Reverse Current at Rated DC Blocking Voltage
TA = 25oC
Maximum Instantaneous Forward Voltage at 1.0A DC Volts
100
50Maximum Reverse Recovery Time (Note 1)
Full Cycle .375” (9.5mm) lead length at
TL = 55oC
HSM101 HSM104HSM102 HSM105 HSM106HSM103
5.0
uAmps
1.0 1.70
75
1.3
MECHANICAL DA TA
.095 (2.4)
.106 (2.7)
.028 (.60)
.018 (.46)
.190 (4.8)
.205 (5.2)
SOLDERABLE
ENDS
RECTRON
RATING AND CHARACTERISTIC CURVES ( HSM101 THRU HSM106 )
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1.1 .2 .4 1.0 2 4 10 20 40 100
HSM101~HSM105
HSM106
TJ = 25
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE 10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
(¡V)
(¡V)
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A 1cm
SET TIME BASE FOR
10/20 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
2.0
1.0
0 25 50 75 100125150175
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
10
1.0
.1
.01
.0010 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
Pulse Width = 300uS
1% Duty Cycle
TJ = 25
HSM106
HSM101~HSM103
HSM104~HSM105
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
70
60
50
40
30
20
10
01 2 5 10 20 50 100
8.3ms Single Half Sine-Wave
(JEDEC Method)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
TJ = 100
TJ = 150
100
10
1.0
.1
.01 400 20 60 80 100 120 140
CHARACTERISTICS
