Ordering number: EN3872 985A 1824/28C4728 PNP/NPN Epitaxial Planar Silicon Transistors 50V/5A Switching Applications Applications - Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features / : - Low collector-to-emitter saturation voltage. - High Gain-Bandwidth Product. - Excellent linearity of DC Current Gain. - Fast switching speed. ( ):28A1824 Absolute Maximum Ratings at Ta = 25C Collector-to-Base Voltage Vcso Collector-toEmitter Voltage VcEo Emitter-to-Base Voltage VEBO Collector Current Ie Collector Current (Pulse) Icp Base Current Ip Collector Dissipation Pc Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta= 25C Collector Cutoff Current Icpo Vcep=(- Emitter Cutoff Current leBo Vep=(- DC Current Gain - hpg(l) Vog=(- hpn(2) Ver=(- Gain-Bandwidth Product fp Ver =(- Output Capacitance Cob Vep=( * : The 2SA1824/2SC4728 are classified by 500mA hgg as follows 100 R 200|[140 $s 280 [200 T 400 | \ unit (-)60 OV. ()50 Vv ()6 Vv (-)5 A ()8 A (1 oA 1.5 Ww 150 C 55 to +150 C min typ max = unit }40V,Ig=0 | (-)1 pA )4V, Io=0 (-)L pA )2V, Ic=()500mA 100* 400* )2V, Ic=(-)4A 35 )5V, Ic=(-)IA (130)180 MHz )10V, f=1MHz (60)40 pF Continued on next page. Package Dimensions 2034B (unit :mm) 19 2 96 " ra 14 105 1:Emitter 2:Collector 3:Base SANYO: FLP 25 2.5 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYG, 110 JAPAN 100 9 wm 7997076 DULA7BL bYT = D151MH, (KOTO) No.3872-1/428A1824/28C4728 Continued from preceding page. / min typ max unit C-E Saturation Voltage Vcrvsat) Ic=()3A, Ip=()0.15A (280) (550) mV 220 400 mV B-E Saturation Voltage Varisat) Ic=()8A, Ip=()0.15A ()0.95 (-)1.3 Vv C-B Breakdown Voltage Vigrycsno Ic=()10vA,Ip=0 ()60 Vv C-E Breakdown Voltage Vigrceo Ic=()lmA,Rge= (~)50 Vv E-B Breakdown Voltage Vipryepo Ig=()10uA,Ic=0 ()6 Vv Turn-on Time ton See specified Test Circuit. 50 ns Storage Time tstg + (450)500 ns Fall Time te + 20 ns Switching Time Test Circuit PW = 20us Int Duty cycle %. > OUTPUT INPUT {- O25V ne 100} wp #70 -5Vv Ig=101gl= 10Ip2=2A (For PNP, the polarity is reversed). Unit (resistance : Q, capacitance : F) - V <5 5 CE 2504728 top <a <4 <i 4 | 1 2 O wT 23 J 3 g 3 <T ht a 5 m2 22 5 5 = 2 5-4 6 =0 =0 0 - 5 0.4 -0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, Vog ~ V Collector-to-Emitter Voltage, Vog:- V 5 V ic - Vee i n 6 s < 1 y 2 7-3 zs E a wT s a oO 5 a 5: 8 8 = 2 3 3 o-i gi =0 0 2 -4 -6 ~6 10 0 2 4 6 8 10 =0 Collector-to Emitter Voltage, Voz V Collector-to-Emitter Voltage, Vc, V | mm 7997076 0019782 Sab mm 10125A 1824/2SC4728 Collector-toEmitter Saturation Voltage, Voxjeat) mV 6 Ic _~ VBE 2SA1824 Vor=~-2 < /h \ pos / gS 2 a9 9 oS tee z -2 3 Oy 0 aot 0- -02 -04 -06 -08 1.0 -12 Base-to-Emitter Voltage, Var V hre Ic 1x0 B04 Vop= 2V Pa 25C a g 5 00 ~~ & 2 A 2 a 10 -0.01 -04 1.0 Collector Current, Ig - A - Ie 2SA1824/2504728 Vor=5V 8 Guain-Bandwidth Product, fp MHz (For PNP, minus sign is omitted). 10 0.4 1.0 Collector Current, Ig - A Vv - Ie g Collector-to-Emitter . Saturation Voltage, Voxisat) mV 6 Ic_. VBE : 2804728 Vop=2V 5 < l ar s mc , a E of, | Ad; Xn 5 Hels S j oO : VY 0 0.2 0.4 0.6 | 0.8 1.0 1.2 Base-toLimitter Voltage, Vaz V here | 1000 DC Current Gain, hyp Sg | 0.01 7 Od 1.0 Collector Current, Ip A Cob - Ves 8 Output Capacitance, C,, ~ pF 3 minus is 4.0 10 100 Collector-to-Base Voltage, Vcg - V Vi - Ie 8 {0 1.0 10 0.01 -0.5 1.0 -10 0.01 041 * Collector Current, Ig A ; Collector Current, Ig ~ A 102 ME 7997076 0019783 4122S8A1824/2S8C4728 Base-to-Emitter A 3 2SA1824 Io/Ip=20 Saturation Voltage, Vara) V -01 -1.0 Collector Current, I A ASO Te= 25C Single pulse ot Collector Current, Ic A oo (For PNP, minus sign is omitted). , 1.0 10 Collector to-Emitter Voltage, Vog V 3s 28C4728 I/Ip= Saturation Voltage, Varjsaty Vi - 3 Base-to-Emitter 0.01 O41 1.0 Collector Current, Ig A Pc - Ta Collector Dissipation, Pg W o 9 89 = = & oo @e Oo nv o oO ww 120 Ambient Temperature, Ta C 9 2 80 140 160 me 7997076 OOLA7a4 355 a | 103