SILICON PLANAR EPITAXIAL PNP TRANSISTOR BFX87 * Hermetic TO-39 Metal package. * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC ICM IEM PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Peak Collector Current Peak Emitter Current TA = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range -50V -50V -5V -600mA -600mA -600mA 0.6W 5.9mW/C -65 to +200C -65 to +200C THERMAL PROPERTIES Symbols Parameters Max. Units RJA Thermal Resistance, Junction To Ambient 291.6 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 10300 Issue 1 Page 1 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR BFX87 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Symbols ICBO Parameters Collector Cut-off current Test Conditions Min. Typ VCB = -40V IE = 0 -50 VCB = -50V IE = 0 -500 VCB = -40V IE = 0 -2 TA= +100C IEBO hFE Emitter Cut-Off Current Forward-current transfer ratio (1) (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Max. VEB = -3.0V IC = 0 -100 VEB = -4.0V IC = 0 -500 VCE = -10V IC = -1.0mA 40 IC = -10mA 40 IC = -150mA 40 IC = -500mA 25 Units nA A nA - IC = -150mA IB = -15mA -0.4 IC = -30mA IB = -1.0mA -0.9 IC = -150mA IB = -15mA -1.3 VCB = -10V IE = 0 V DYNAMIC CHARACTERISTICS Cobo Output Capacitance 12 f = 1.0MHz Cibo Input Capacitance fT Transition Frequency VEB = -2V pF IC = 0 30 f = 1.0MHz VCE = -10V IC = -50mA f = 100MHz 100 MHz Notes (1) Pulse Width 380us, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 10300 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR BFX87 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45 TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 10300 Issue 1 Page 3 of 3