HSM223C Silicon Epitaxial Planar Diode for High Speed Switching Features * Low capacitance, proof against high voltage. Pin Arrangement * Fast recovery time. ne * MPAK package is suitable for high density surface mounting and high speed assembly. Lj2 ~Ld1 Ordering Information (Top View) + Nc 2 Cathode Type No. Laser Mark Package Code 3 Anode HSM223C A8 MPAK Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Peak reverse voltage Vam 85 Vv Reverse voltage Vea 80 Vv Peak forward current lem 300 mA Non-Repetitive peak forward surge current lesa * 4 A Average forward current Il, 100 mA Junction temperature Tq 125 C Storage temperature T stg _ -55 to +125 * Within 1ps forward surge current. Electrical Characteristics (Ta = 25C) item Symbol Min Typ Max Unit Test Condition Vey _ 0.76 1.0 Ip = 10 mA Forward voltage Vero _ 0.88 1.0 Vv Ip = 50 mA Veg _ 0.97 1.2 ip = 100 mA Reverse current In _ _ 0.1 pA Va =80V Capacitance Cc _ 0.5 2.0 pF Va=0V,f=1MHz Reverse recovery time trr _ 3.0 ns I= 10mA, Va=6V, R_ =50Q 133HSM223C Forward current If (A) Capacitance C (pF) 0 1.0 VL " Ao & v 4 AES 0.2 0.4 0.6 0.8 Forward voltage V- (V) Fig.1 Forward current Vs. Forward voitage 10 Reverse voltage Va (V) Fig.3 Capacitance Vs. Reverse voltage 1.0 10 Reverse current Ip (A) 20 40 60 80 100 Reverse voltage Vp (V) Fig.2 Reverse current Vs. Reverse voltage 134