A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 100 mA 25 V
BVCES IC = 100 mA 55 V
BVEBO IE = 5.0 mA 3.5 V
hFE VCE = 5.0 V IC = 1.0 A 20 100 ---
PG
η
ηη
ηC VCC = 25 V POUT = 25 W f = 900 MHz 9.0
50
dB
%
PG
η
ηη
ηC
Ψ
ΨΨ
Ψ
VCC = 25 V POUT = 10 W f = 900 MHz
ICQ
10
35 11
30:1
dB
%
---
NPN SILICON RF POWER TRANSISTOR
PTB20038
DESCRIPTION:
The ASI PTB20038 is Designed for
General Purpose Class AB Power
Amplif ier Applications up to 900 MHz.
FEATURES:
• 25 W, 860-900 MHz
• Silicon Nitride Passivated
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 6.7 A
VCB 50 V
PDISS 65 W @ TC = 25 °C
TJ -40 °C to +150 °C
TSTG -40 °C to +150 °C
θ
θθ
θJC 2.7 °C/W
PACKAGE STYLE .400 6L FLG
1 = COLLECTOR 2 = BASE 3,4,5,6 = EMITTER
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2
ERROR! REFERENCE SOURCE NOT FOUND.
PTB23005X
Specif i cations are subjec t to change without notice.
