Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-resistance BVDSS 40V
▼ Simple Drive Requirement RDS(ON) 11mΩ
▼ Fast Switching Characteristic ID12A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient350 ℃/W
Data and specifications subject to change without notice
200810072
1
AP9467GM
Rating
40
+20
12
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Linear Derating Factor 0.02
Storage Temperature Range
Continuous Drain Current310
Pulsed Drain Current140
RoHS-compliant Product
Thermal Data
Parameter
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
SSSG
DDDD
SO-8
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=12A - - 11 mΩ
VGS=4.5V, ID=6A - - 20 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=12A - 24 - S
IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=+20V - - +100 nA
QgTotal Gate Charge2ID=12A - 10 16 nC
Qgs Gate-Source Charge VDS=20V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5 - nC
td(on) Turn-on Delay Time2VDS=20V - 7 - ns
trRise Time ID=1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns
tfFall Time RD=20Ω-10-ns
Ciss Input Capacitance VGS=0V - 970 1660 pF
Coss Output Capacitance VDS=25V - 185 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF
RgGate Resistance f=1.0MHz - 1.8 3 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=2.1A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=12A, VGS=0V, - 25 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 21 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9467GM
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
AP9467GM
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
8
10
12
14
16
18
20
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=6A
TA=25
℃
0
10
20
30
40
50
01234
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC 10V
7.0V
6.0V
5.0V
VG=4.0V
0
10
20
30
40
50
01234
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC 10V
7.0V
6.0V
5.0V
VG=4.0V
0.4
0.9
1.4
1.9
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=12A
VG=10V
0.0
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
2
4
6
8
10
12
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP9467GM
Q
VG
4.5V
QGS QGD
QG
Charge
0
2
4
6
8
048121620
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =20V
VDS =24V
VDS =32V
ID=12A
0
400
800
1200
1600
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) trtd(off) tf
VDS
VGS
10%
90%
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
c 0.19 0.22 0.25
D 4.80 4.90 5.00
E 5.80 6.15 6.50
E1 3.80 3.90 4.00
e
G
L 0.38 －0.90
α0.00 4.00 8.00
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
1.27 TYP
0.254 TYP
Package Outline : SO-8
ADVANCED POWER ELECTRONICS CORP.
e
B
134
5678
2
D
E1
A1
A
G
Part Number
9467G
M
YWWSSS
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
E
5
meet Rohs requirement
for low voltage MOSFET only
