November 2011 Doc ID 4171 Rev 6 1/8
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MJE340
MJE350
Complementary silicon power transistors
Features
■STMicroelectronics preferred salestypes
■Complementary NPN - PNP devices
Applications
■Linear and switching industrial equipment
Description
The MJE340 is a silicon planar NPN transistor
intended for use in medium power linear and
switching applications. It is mounted in SOT-32.
The complementary PNP type is MJE350.
Figure 1. Internal schematic diagram
SOT-32
#
"
%
3#
Table 1. Device summary
Order code Marking Polarity Package Packaging
MJE340 MJE340 NPN SOT-32 Tube
MJE350 MJE350 PNP SOT-32 Tube
www.st.com
Electrical ratings MJE340, MJE350
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1 Electrical ratings
Note: for PNP type voltage and current values are negative.
Table 2. Absolute maximum ratings
Symbol Parameter
Value
UnitMJE340 (NPN)
MJE350 (PNP)
VCBO Collector-base voltage (IE = 0) 300 V
VCEO Collector-emitter voltage (IB = 0) 300 V
VEBO Base-emitter voltage (IC = 0) 3 V
ICCollector current 0.5 A
PTOT Total dissipation at Tc ≤ 25 °C 20.8 W
Tstg Storage temperature -65 to 150 °C
TJMax operating junction temperature 150
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case_max 6.0 °C/W
MJE340, MJE350 Electrical characteristics
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2 Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Note: for PNP type voltage and current values are negative.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
VCB= 300 V 100 µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 3 V 100 µA
VCEO(sus)(1)
1. Pulse test: pulse duration = 300 µs, duty cycle ≤ 2 %.
Collector-emitter
sustaining voltage (IB = 0) IC = 1 mA 300 V
VBE(on)
Emitter-base on voltage
(IC = 0) IC = 50 mA VCE=10 V 1 V
VCE(sat) (1) Collector-emitter
saturation voltage IC = 100 mA _ IB = 10 mA 0.5 V
hFE DC current gain IC = 50 mA VCE = 10 V 30 240
Electrical characteristics MJE340, MJE350
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2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. DC current gain (NPN type) Figure 5. DC current gain (PNP type)
Figure 6. Collector-emitter saturation
voltage (NPN type)
Figure 7. Base-emitter saturation
voltage (PNP type)
MJE340, MJE350 Package mechanical data
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3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Package mechanical data MJE340, MJE350
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Figure 8. SOT-32 (TO-126) drawing
Table 5. SOT-32 (TO-126) mechanical data
Dim.
mm.
Min. Typ. Max.
A 2.40 2.90
B 0.64 0.88
B1 0.39 0.63
D 10.50 11.05
E 7.40 7.80
e 2.04 2.29 2.54
e1 4.07 4.58 5.08
L 15.30 16
ØP 2.90 3.20
Q3.80
Q1 1 1.52
H2 2.15
I1.27
?2%6?%
MJE340, MJE350
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