CDBER0130L-HF
SMD Schottky Barrier Diode
Page 1
REV:B
0.053(1.35)
0.045(1.15)
0.034(0.85)
0.026(0.65)
0.030(0.75)
0.024(0.60)
Dimensions in inches and (millimeter)
0.022(0.55) Typ.
0.016(0.40) Typ.
Comchip Technology CO., LTD.
A
mA
V
V
1
100
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
OC
OC
+125
+125
-40
TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter Conditions Symbol Min Typ
Max
Unit
uA
V
10
0.35
IR
VF
Reverse current
Forward voltage
Parameter Conditions Symbol Min Typ
Max
Unit
VR = 10 V
IF = 10 mA
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
QW-G1041
0503/SOD-723F
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin/leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0503/SOD-723F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BP
-Mounting position: Any
-Weight: 0.002 gram(approx.).
Io = 100 mA
VR = 30 Volts
RoHS Device
Halogen Free