Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 9
1Publication Order Number:
MMSZ4678T1/D
MMSZ4xxxT1G Series,
SZMMSZ4xxxT1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 1.8 V to 43 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Units
Total Power Dissipation on FR−5 Board,
(Note 1) @ TL = 75C
Derated above 75C
PD500
6.7
mW
mW/C
Thermal Resistance, (Note 2)
Junction−to−Ambient
RqJA 340
C/W
Thermal Resistance, (Note 2)
Junction−to−Lead
RqJL 150
C/W
Junction and Storage Temperature Range TJ, Tstg −55 to
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint.
2. Thermal Resistance measurement obtained via infrared Scan Method.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1
Cathode
2
Anode
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
SOD−123
CASE 425
STYLE 1
Device Package Shipping†
ORDERING INFORMATION
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMSZ4xxxT1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSZ4xxxT3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel
xx = Device Code (Refer to page 3)
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
xx M G
G
1
SZMMSZ4xxxT1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
SZMMSZ4xxxT3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZ
VF
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Device*
Device
Marking
Zener Voltage (Note 3) Leakage Current
VZ (Volts) @ IZT IR @ VR
Min Nom Max mAmAVolts
MMSZ4678T1G CC 1.71 1.8 1.89 50 7.5 1
MMSZ4679T1G CD 1.90 2.0 2.10 50 5 1
MMSZ4680T1G CE 2.09 2.2 2.31 50 4 1
MMSZ4681T1G CF 2.28 2.4 2.52 50 2 1
MMSZ4682T1G CH 2.565 2.7 2.835 50 1 1
MMSZ4683T1G CJ 2.85 3.0 3.15 50 0.8 1
MMSZ4684T1G CK 3.13 3.3 3.47 50 7.5 1.5
MMSZ4685T1G CM 3.42 3.6 3.78 50 7.5 2
MMSZ4686T1G CN 3.70 3.9 4.10 50 5 2
MMSZ4687T1G CP 4.09 4.3 4.52 50 4 2
MMSZ4688T1G CT 4.47 4.7 4.94 50 10 3
MMSZ4689T1G CU 4.85 5.1 5.36 50 10 3
MMSZ4690T1G/T3G CV 5.32 5.6 5.88 50 10 4
MMSZ4691T1G CA 5.89 6.2 6.51 50 10 5
MMSZ4692T1G CX 6.46 6.8 7.14 50 10 5.1
MMSZ4693T1G CY 7.13 7.5 7.88 50 10 5.7
MMSZ4694T1G CZ 7.79 8.2 8.61 50 1 6.2
MMSZ4695T1G DC 8.27 8.7 9.14 50 1 6.6
MMSZ4696T1G DD 8.65 9.1 9.56 50 1 6.9
MMSZ4697T1G DE 9.50 10 10.50 50 1 7.6
MMSZ4698T1G DF 10.45 11 11.55 50 0.05 8.4
MMSZ4699T1G DH 11.40 12 12.60 50 0.05 9.1
MMSZ4700T1G DJ 12.35 13 13.65 50 0.05 9.8
MMSZ4701T1G DK 13.30 14 14.70 50 0.05 10.6
MMSZ4702T1G DM 14.25 15 15.75 50 0.05 11.4
MMSZ4703T1G †DN 15.20 16 16.80 50 0.05 12.1
MMSZ4704T1G DP 16.15 17 17.85 50 0.05 12.9
MMSZ4705T1G DT 17.10 18 18.90 50 0.05 13.6
MMSZ4706T1G DU 18.05 19 19.95 50 0.05 14.4
MMSZ4707T1G DV 19.00 20 21.00 50 0.01 15.2
MMSZ4708T1G DA 20.90 22 23.10 50 0.01 16.7
MMSZ4709T1G DX 22.80 24 25.20 50 0.01 18.2
MMSZ4710T1G DY 23.75 25 26.25 50 0.01 19.0
MMSZ4711T1G †EA 25.65 27 28.35 50 0.01 20.4
MMSZ4712T1G EC 26.60 28 29.40 50 0.01 21.2
MMSZ4713T1G ED 28.50 30 31.50 50 0.01 22.8
MMSZ4714T1G EE 31.35 33 34.65 50 0.01 25.0
MMSZ4715T1G EF 34.20 36 37.80 50 0.01 27.3
MMSZ4716T1G EH 37.05 39 40.95 50 0.01 29.6
MMSZ4717T1G EJ 40.85 43 45.15 50 0.01 32.6
3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.
*Include SZ-prefix devices where applicable.
†MMSZ4703 and MMSZ4711 Not Available in 10,000/Tape & Reel
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/ C)
VZ, NOMINAL ZENER VOLTAGE (V)
-3
-2
-1
0
1
2
3
4
5
6
7
8
1211
10
98765432
Figure 1. Temperature Coefficients
(Temperature Range −55C to +150C)
TYPICAL TC VALUES
VZ @ IZT
VZ, TEMPERATURE COEFFICIENT (mV/ C)
100
10
110 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55C to +150C)
VZ @ IZT
1.2
1.0
0.8
0.6
0.4
0.2
01501251007550250
T, TEMPERATURE (5C)
Figure 3. Steady State Power Derating
PD versus TA
PD versus TL
Ppk, PEAK SURGE POWER (WATTS)
0.1
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1 10 100 1000
1000
100
10
1
RECTANGULAR
WAVEFORM, TA = 25C
100
VZ, NOMINAL ZENER VOLTAGE
Figure 5. Effect of Zener Voltage on
Zener Impedance
101
ZZT, DYNAMIC IMPEDANCE ( )
1000
100
10
1
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
1.21.11.00.90.80.70.60.5
0.4
IF, FORWARD CURRENT (mA)
1000
100
10
1
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
150C75C 25C 0C
TYPICAL TC VALUES
PD, POWER DISSIPATION (WATTS)
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
TA = 25C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110 30 50 70 90
TA = 25C
IR, LEAKAGE CURRENT ( A)
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150C
+25C
-55C
IZ, ZENER CURRENT (mA)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
http://onsemi.com
6
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
ÂÂÂÂ
ÂÂÂÂ
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
ÉÉ
ÉÉ
ÉÉ
q
--- ---
q00
10 10
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MMSZ4678T1/D
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