FDMS86300DC POWERTRENCH) MOSFET, N-Channel, DUAL COOL) 56 80 V, 110 A, 3.1 mW General Description www.onsemi.com This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced POWERTRENCH(R) process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL(R) package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. ELECTRICAL CONNECTION Features * * * * * * DUAL COOL Top Side Cooling PQFN package Max rDS(on) = 3.1 mW at VGS = 10 V, ID = 24 A Max rDS(on) = 4.0 mW at VGS = 8 V, ID = 21 A High performance technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant S D S D S D G D N-Channel MOSFET D D D D Pin 1 G S S Top Typical Applications S Pin 1 Bottom DFN8 5.1x6.15 (Dual Cool 56) CASE 506EG * Synchronous Rectifier for DC/DC Converters * Telecom Secondary Side Rectification * High End Server/Workstation Vcore Low Side MARKING DIAGRAM XXXXXX A Y WW ZZ = Device Code = Assy Location = Year Code = Work Week Code = Assy Lot Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2013 May, 2019 - Rev. 2 1 Publication Order Number: FDMS86300DC/D FDMS86300DC PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping 86300 FDMS86300DC UDFN8 13" 12 mm 3000 Units/ Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Parameter Symbol Ratings Units VDS Drain to Source Voltage 80 V VGS Gate to Source Voltage 20 V ID Drain Current 110 A -Continuous TC = 25C -Continuous TA = 25C -Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TC = 25C Power Dissipation TA = 25C TJ, TSTG (Note 1a) 24 (Note 2) 260 (Note 3) 240 mJ 125 W 3.2 (Note 1a) -55 to +150 Operating and Storage Junction Temperature Range C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 mA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA BVDSS DBV DSS DT J 80 V 45 mV/C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA DV GS(th) DT J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25C -11 rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 24 A 2.6 3.1 VGS = 8 V, ID = 21 A 3.1 4.0 VGS = 10 V, ID = 24 A, TJ = 125C 4.1 5.0 gFS Forward Transconductance 2.5 3.3 4.5 79 VDD = 10 V, ID = 24 A V mV/C mW S DYNAMIC CHARACTERISTICS VDS = 40 V, VGS = 0 V, f = 1 MHz 5265 7005 pF Output Capacitance 929 1235 pF CRSS Reverse Transfer Capacitance 21 50 pF RG Gate Resistance 1.2 2.6 W CISS Input Capacitance COSS 0.1 www.onsemi.com 2 FDMS86300DC ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units 29 47 ns 25 44 ns SWITCHING CHARACTERISTICS VDD = 40 V, ID = 24 A, VGS = 10 V, RGEN = 6 W td(ON) Turn*On Delay Time tr Rise Time tD(OFF) Turn*Off Delay Time 35 57 ns tf Fall Time 9 18 ns Qg(TOT) Total Gate Charge 72 101 nC 59 84 nC VGS = 0 V to 10 V VGS = 0 V to 8 V Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = 40 V, ID = 24 A 26 nC 14 nC DRAIN-SOURCE DIODE CHARACTERISTICS VSD IS Source to Drain Diode Forward Voltage Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.7 A (Note 2) 0.72 1.2 VGS = 0 V, IS = 24 A (Note 2) 0.80 1.3 75 TC = 25C V V 150 trr Reverse Recovery Time Qrr IF = 24 A, di/dt = 100 A/ms Reverse Recovery Charge 56 88 ns 42 67 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. THERMAL CHARACTERISTICS Symbol Parameter Ratings Units C/W RqJC Thermal Resistance, Junction to Case (Top Source) 2.3 RqJC Thermal Resistance, Junction to Case (Bottom Drain) 1.0 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RqJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RqJA Thermal Resistance, Junction to Ambient (Note 1c) 27 RqJA Thermal Resistance, Junction to Ambient (Note 1d) 34 RqJA Thermal Resistance, Junction to Ambient (Note 1e) 16 RqJA Thermal Resistance, Junction to Ambient (Note 1f) 19 RqJA Thermal Resistance, Junction to Ambient (Note 1g) 26 RqJA Thermal Resistance, Junction to Ambient (Note 1h) 61 RqJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RqJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RqJA Thermal Resistance, Junction to Ambient (Note 1k) 11 RqJA Thermal Resistance, Junction to Ambient (Note 1l) 13 www.onsemi.com 3 FDMS86300DC NOTES: 1. RqJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RqJC is guaranteed by design while RqCA is determined by the user's board design. b) 81C/W when mounted on a minimum pad of 2 oz copper. a) 38C/W when mounted on a 1 in2 pad of 2 oz copper. SS SF DS DF G SS SF DS DF G c) Still air, 20.9x10.4x12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d) Still air, 20.9x10.4x12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper e) Still air, 45.2x41.4x11.7 mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f) Still air, 45.2x41.4x11.7 mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g) .200FPM Airflow, No Heat Sink, 1 in2 pad of 2 oz copper h) .200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i) .200FPM Airflow, 20.9x10.4x12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j) .200FPM Airflow, 20.9x10.4x12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper k) .200FPM Airflow, 45.2x41.4x11.7 mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l) .200FPM Airflow, 45.2x41.4x11.7 mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. Starting TJ = 25_C; N-ch: L = 0.3 mH, IAS = 40 A, VDD = 72 V, VGS = 10 V. ID, DRAIN CURRENT (A) 260 VGS = 10 V VGS = 8 V 208 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE TYPICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) VGS = 7 V PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 156 VGS = 6.5 V 104 VGS = 6 V 52 VGS = 5.5 V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 6 VGS = 5.5 V 5 VGS = 6 V 4 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX VGS = 6.5 V 3 VGS = 7 V 2 1 VGS = 8 V 0 0 52 104 156 VGS = 10 V 208 260 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage www.onsemi.com 4 FDMS86300DC TYPICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) 25 ID = 24 A VGS = 10 V 1.8 rDS(on) , DRAIN TO 1.6 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE(mW) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 ID = 24 A 20 15 TJ = 125 oC 10 5 0 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE oC () TJ = 25 oC 4 5 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 208 VDS = 5 V 156 T J = 150 oC 104 TJ = 25 oC 52 T J = -55 oC 0 3 4 5 6 7 300 100 7 8 9 10 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55oC 0.01 1E-3 0.0 8 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 10 1.2 10000 VDD = 30 V ID = 24 A Ciss 8 VDD = 40 V VDD = 50 V CAPACITANCE (pF) VGS , GATE TO SOURCE VOLTAGE (V) 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs. Gate to Source Voltage IS, REVERSE DRAIN CURRENT (A) Figure 3. Normalized On Resistance vs. Junction Temperature 260 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 6 4 1000 Coss Crss 100 2 f = 1 MHz 10 VGS = 0 V 0 0 20 40 60 5 0.1 80 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage www.onsemi.com 5 80 FDMS86300DC 160 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 TJ = 25 oC 10 TJ = 100 oC TJ = 1 0.01 0.1 1 125 oC VGS = 10 V 100 80 Limited by Package 60 RqJC = 1.0 C/W 40 20 10 100 0 25 500 50 100 125 150 TC, CASE TEMPERATURE C( ) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 10000 P(PK), PEAK TRANSIENT POWER (W) 1000 I D, DRAIN CURRENT (A) 75 o tAV, TIME IN AVALANCHE (ms) 100 SINGLE PULSE RqJA = 81 oC/W o 1000 100 us 10 THIS AREA IS 1 ms 1 LIMITED BY r DS(on) 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 0.1 RqJA = 81 oC/W 0.01 0.01 TA = 25 oC 1s 10 s CURVE BENT TO MEASURED DATA 0.1 1 DC 10 100200 TA = 25 C 100 10 1 -4 10 -3 10 0.1 0.01 10 10 0 100 1 10 1000 Figure 12. Single Pulse Maximum Power Dissipation DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZqJA(t) = r(t) x R SINGLE PULSE 0.001 0.0001 -4 10 -1 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area 2 1 -2 10 VDS, DRAIN to SOURCE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE =8V o qJA RqJA = 81 5C/W Peak TJ = P DM x Z qJA(t) + T A Duty Cycle, D = t1 / t 2 -3 10 -2 10 10 -1 0 10 10 1 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5.1x6.15, 1.27P CASE 506EG ISSUE A DATE 18 JUL 2018 DOCUMENT NUMBER: DESCRIPTION: 98AON84257G DFN8 5.1x6.15, 1.27P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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