© Semiconductor Components Industries, LLC, 2013
May, 2019 − Rev. 2
1Publication Order Number:
FDMS86300DC/D
FDMS86300DC
POWERTRENCH) MOSFET,
N-Channel, DUAL COOL) 56
80 V, 110 A, 3.1 mW
General Description
This N−Channel MOSFET is produced using Fairchild
Semiconductor’s advanced POWERTRENCH® process that
incorporates Shielded Gate technology. Advancements in both silicon
and DUAL COOL® package technologies have been combined to
offer the lowest rDS(on) while maintaining excellent switching
performance by extremely low Junction−to−Ambient thermal
resistance.
Features
•DUAL COOL Top Side Cooling PQFN package
•Max rDS(on) = 3.1 mW at VGS = 10 V, ID = 24 A
•Max rDS(on) = 4.0 mW at VGS = 8 V, ID = 21 A
•High performance technology for extremely low rDS(on)
•100% UIL Tested
•RoHS Compliant
Typical Applications
•Synchronous Rectifier for DC/DC Converters
•Telecom Secondary Side Rectification
•High End Server/Workstation Vcore Low Side
See detailed ordering and shipping information on page 2
of this data sheet.
ORDERING INFORMATION
www.onsemi.com
N-Channel MOSFET
MARKING DIAGRAM
XXXXXX = Device Code
A = Assy Location
Y = Year Code
WW = Work Week Code
ZZ = Assy Lot Code
ELECTRICAL CONNECTION
D
D
D
D
S
S
S
G
DFN8 5.1x6.15
(Dual Cool 56)
CASE 506EG
Bottom
Top
Pin 1
S
GSS
D
DDD
Pin 1
FDMS86300DC
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2
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package Reel Size Tape Width Shipping†
86300 FDMS86300DC UDFN8 13” 12 mm 3000 Units/
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 80 V
VGS Gate to Source Voltage ±20 V
IDDrain Current −Continuous TC = 25°C110 A
−Continuous TA = 25°C (Note 1a) 24
−Pulsed (Note 2) 260
EAS Single Pulse Avalanche Energy (Note 3) 240 mJ
PDPower Dissipation TC = 25°C125 W
Power Dissipation TA = 25°C (Note 1a) 3.2
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min. Typ. Max. Units
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 80 V
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 mA, referenced to 25°C45 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1mA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA2.5 3.3 4.5 V
DVGS(th)
DTJ
Gate to Source Threshold Voltage Tempera-
ture Coefficient
ID = 250 mA, referenced to 25°C−11 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 24 A 2.6 3.1 mW
VGS = 8 V, ID = 21 A 3.1 4.0
VGS = 10 V, ID = 24 A, TJ = 125°C 4.1 5.0
gFS Forward Transconductance VDD = 10 V, ID = 24 A 79 S
DYNAMIC CHARACTERISTICS
CISS Input Capacitance VDS = 40 V, VGS = 0 V, f = 1 MHz 5265 7005 pF
COSS Output Capacitance 929 1235 pF
CRSS Reverse Transfer Capacitance 21 50 pF
RGGate Resistance 0.1 1.2 2.6 W
FDMS86300DC
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3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol UnitsMax.Typ.Min.Test ConditionsParameter
SWITCHING CHARACTERISTICS
td(ON) Turn*On Delay Time VDD = 40 V, ID = 24 A,
VGS = 10 V, RGEN = 6 W
29 47 ns
trRise Time 25 44 ns
tD(OFF) Turn*Off Delay Time 35 57 ns
tfFall Time 9 18 ns
Qg(TOT) Total Gate Charge VGS = 0 V to 10 V
VGS = 0 V to 8 V
VDD = 40 V,
ID = 24 A
72 101 nC
Total Gate Charge 59 84 nC
Qgs Gate to Source Gate Charge 26 nC
Qgd Gate to Drain ”Miller” Charge 14 nC
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.7 A (Note 2) 0.72 1.2 V
VGS = 0 V, IS = 24 A (Note 2) 0.80 1.3
ISSource to Drain Diode Forward Voltage TC = 25°C75 V
150
trr Reverse Recovery Time
IF = 24 A, di/dt = 100 A/ms
56 88 ns
Qrr Reverse Recovery Charge 42 67 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
THERMAL CHARACTERISTICS
Symbol Parameter Ratings Units
RqJC Thermal Resistance, Junction to Case (Top Source) 2.3 °C/W
RqJC Thermal Resistance, Junction to Case (Bottom Drain) 1.0
RqJA Thermal Resistance, Junction to Ambient (Note 1a) 38
RqJA Thermal Resistance, Junction to Ambient (Note 1b) 81
RqJA Thermal Resistance, Junction to Ambient (Note 1c) 27
RqJA Thermal Resistance, Junction to Ambient (Note 1d) 34
RqJA Thermal Resistance, Junction to Ambient (Note 1e) 16
RqJA Thermal Resistance, Junction to Ambient (Note 1f) 19
RqJA Thermal Resistance, Junction to Ambient (Note 1g) 26
RqJA Thermal Resistance, Junction to Ambient (Note 1h) 61
RqJA Thermal Resistance, Junction to Ambient (Note 1i) 16
RqJA Thermal Resistance, Junction to Ambient (Note 1j) 23
RqJA Thermal Resistance, Junction to Ambient (Note 1k) 11
RqJA Thermal Resistance, Junction to Ambient (Note 1l) 13
FDMS86300DC
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4
NOTES:
1. RqJA is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. RqJC is guaranteed by
design while RqCA is determined by the user’s board design.
G
DF
DS
SF
SS
G
DF
DS
SF
SS
a) 38°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b) 81°C/W when mounted on
a minimum pad of 2 oz copper.
c) Still air, 20.9×10.4×12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d) Still air, 20.9×10.4×12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
e) Still air, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper
f) Still air, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
g) .200FPM Airflow, No Heat Sink, 1 in2 pad of 2 oz copper
h) .200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i) .200FPM Airflow, 20.9×10.4×12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j) .200FPM Airflow, 20.9×10.4×12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
k) .200FPM Airflow, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper
l) .200FPM Airflow, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting TJ = 25_C; N−ch: L = 0.3 mH, IAS = 40 A, VDD = 72 V, VGS = 10 V.
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
012345
0
52
104
156
208
260
VGS = 7 V
VGS = 6 V
VGS = 10 V
VGS = 6.5 V
VGS = 8 V
VGS = 5.5 V
PULSE DURATION = 80
ms
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0 52 104 156 208 260
0
1
2
3
4
5
6
VGS = 7 V
VGS
= 8 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 5.5 V
VGS
= 6 V
VGS = 6.5 V
VGS= 10 V
FDMS86300DC
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5
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On-Resistance
vs. Gate to Source Voltage
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain
to Source Voltage
4 5 678 910
0
5
10
15
20
25
−75 −50 −25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 24 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
TJ, JUNCTION TEMPERATURE (
oC)
TJ= 125 oC
ID= 24 A
TJ= 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on) ,DRAIN TO
SOURCE ON−RESISTANCE(mW)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
345678
0
52
104
156
208
260
TJ = 25 oC
TJ
= 150 oC
VDS = 5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
TJ
= −55oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1E−3
0.01
0.1
1
10
100
300
TJ = −55
oC
TJ = 25 oC
TJ= 150oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
0 20406080
0
2
4
6
8
10
ID= 24 A
VDD = 40 V
VDD = 30 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 50 V
0.1 1 10 80
5
10
100
1000
10000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
FDMS86300DC
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6
Figure 9. Unclamped Inductive
Switching Capability Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum
Power Dissipation
Figure 13. Junction−to−Case Transient Thermal Response Curve
0.01 0.1 1 10 100 500
1
10
100
TJ= 100 oC
TJ= 25 oC
TJ= 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
20
40
60
80
100
160
Limited by Package = 8 V
RqJC = 1.0oC/W
VGS= 10 V
ID,DRAIN CURRENT (A)
TC, CASE TEMPERATURE (
oC)
0.01 0.1 1 10 100200
0.01
0.1
1
10
100
1000
CURVE BENT TO
MEASURED DATA
1 ms
10 s
10 ms
DC
1 s
100 ms
100 us
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
SINGLE PULSE
TJ = MAX RATED
RqJA = 81 oC/W
TA = 25 oC
THIS AREA IS
LIMITED BY r
DS(on)
10−410−310−210−1100101100 1000
1
10
100
1000
10000
SINGLE PULSE
RqJA = 81oC/W
TA = 25 oC
P(PK),PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
10−410−310−210−1100101100 1000
0.0001
0.001
0.01
0.1
1
2
SINGLE PULSE
DUTY CYCLE−DESCENDING ORDER
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURATION (sec)
PDM
t1
t2
NOTES:
Duty Cycle, D = t1 / t2
ZqJA(t) = r(t) x R qJA
Peak TJ = P DM x Z qJA(t) + T A
RqJA = 81 5C/W
D = 0.5
0.2
0.1
0.05
0.02
0.01
POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries
in the United States and/or other countries.
DFN8 5.1x6.15, 1.27P
CASE 506EG
ISSUE A DATE 18 JUL 201
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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