Standard Power MOSFET IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 m N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C; RGS = 1 M 200 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 46 A IDM TC = 25C, pulse width limited by TJM 184 A 46 A 28 mJ 5 V/ns 280 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C IAR EAR TC = 25C dv/dt IDM, di/dt 100 A/s, VDD VDSS, IS TJ 150C, RG = 2 PD TC = 25C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions VDSS VGS = 0 V, ID = 250 A 200 VDS = VGS, ID = 250 A 2 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = 200V VDS = 160V VGS = 0 V TJ = 25C TJ = 125C VGS = 10 V, ID = 28 A Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved g 300 C Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VGS(th) RDS(on) 6 V 4 V 100 nA 25 250 A A 0.055 TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features * International standard package JEDEC TO-247 AD * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * High commutating dv/dt rating * Fast switching times Applications * Switch-mode and resonant-mode power supplies * Motor controls * Uninterruptible Power Supplies (UPS) * DC choppers Advantages * Easy to mount with 1 screw (isolated mounting screw hole) * Space savings * High power density 97545(1/98) 1-2 IRFP 260 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 28 A, pulse test 34 S 3900 pF 760 pF C rss 320 pF td(on) 23 ns C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 24 TO-247 AD (IXTH) Outline tr VGS = 10 V, VDS = 100 VDSS, ID = 46A 30 ns td(off) RG = 4.3 (External) 90 ns 28 ns 230 nC 42 nC 110 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 Qgd RthJC 0.45 RthCK 0.24 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 46 A Repetitive; pulse width limited by TJM 180 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.8 V t rr IF = 0.5 IS, -di/dt = 100 A/s, VR = 100 V 260 590 ns 2.34 7.2 uC Q rr (c) 2000 IXYS All rights reserved Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2