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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 200 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C46A
IDM TC= 25°C, pulse width limited by TJM 184 A
IAR 46 A
EAR TC= 25°C28mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 280 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
N-Channel Enhancement Mode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 200 V
VGS(th) VDS = VGS, ID = 250 µA24V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 200V TJ = 25°C25µA
VDS = 160V TJ = 125°C 250 µA
VGS = 0 V
RDS(on) VGS = 10 V, ID = 28 A 0.055 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
• International standard package
JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• High commutating dv/dt rating
• Fast switching times
Applications
• Switch-mode and resonant-mode
power supplies
• Motor controls
• Uninterruptible Power Supplies (UPS)
• DC choppers
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
D (TAB)
97545(1/98)
Standard
Power MOSFET IRFP 260 VDSS = 200 V
ID (cont) = 46 A
RDS(on) = 55 mΩΩ
ΩΩ
Ω
IXYS reserves the right to change limits, test conditions, and dimensions.
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 28 A, pulse test 2 4 3 4 S
Ciss 3900 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 7 60 p F
Crss 320 pF
td(on) 23 ns
trVGS = 10 V, VDS = 100 VDSS, ID = 46A 3 0 ns
td(off) RG = 4.3 Ω (External) 90 ns
tf28 ns
Qg(on) 230 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 42 nC
Qgd 110 nC
RthJC 0.45 K/W
RthCK 0.24 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 46 A
ISM Repetitive; pulse width limited by TJM 180 A
VSD IF = IS, VGS = 0 V, 1 .8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 0.5 IS, -di/dt = 100 A/µs, VR = 100 V 2 60 5 9 0 ns
Qrr 2.34 7.2 uC
TO-247 AD (IXTH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IRFP 260
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
