©2000 Fairchild Semiconductor International Rev. A, February 2000
TIP41 Series(TIP41/41A/41B/41C)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse T est: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Emitter Voltage: TIP41
: TIP41 A
: TIP41 B
: TIP41 C
40
60
80
100
V
V
V
V
VCEO Collector-Emitter Voltage: TIP41
: TIP41 A
: TIP41 B
: TIP41 C
40
60
80
100
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 6 A
ICP Collector Current (Pulse) 10 A
IB Base Current 2 A
PC Collector Dissipation (TC=25°C) 65 W
PC Collector Dissipation (Ta=25°C) 2 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: TIP41
: TIP41A
: TIP41B
: TIP41C
IC = 30mA, IB = 0
40
60
80
100
V
V
V
V
ICEO Collector Cut-off Current
: TIP41/41A
: TIP41B/41C VCE = 30V, IB = 0
VCE = 60V, IB = 0 0.7
0.7 mA
mA
ICES Collector Cut-off Current
: TIP41
: TIP41A
: TIP41B
: TIP41C
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
400
400
400
400
µA
µA
µA
µA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA
hFE * DC Current Gain VCE = 4V,IC = 0.3A
VCE = 4V, IC = 3A 30
15 75
VCE(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 600mA 1.5 V
VBE(sat) * Base-Em itter Satur ation Voltage VCE = 4V, IC = 6A 2.0 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA 3.0 MHz
TIP41 Series(TIP41/41A/41B/41C)
Medium Power Linear Switching Applications
• Complement to TIP42/42A/42B/42C
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International
TIP41 Series(TIP41/41A/41B/41C)
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
1 10 100 1000 10000
1
10
100
1000 VCE = 4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000 10000
10
100
1000
10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat )[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
110100
0.1
1
10
100
TIP41C VCEO MAX.
TIP41B V CEO MAX.
TIP41A V CEO MAX.
TIP41 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
0.5ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 255075100125150175
0
20
40
60
80
100
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
TIP41 Series(TIP41/41A/41B/41C)
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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FACT™
FACT Quiet Series™
FAST®
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ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Form ative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
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