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File Number 3746.3
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 2000
RHRD660, RHRD660S
6A, 600V Hyperfast Diodes
The RHRD660 and RHRD660S are hyperfast diodes with
soft recovery characteristics (trr < 30ns). They have half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching tr ansistors.
Formerly developmental type TA49057.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<30ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging JEDEC STYLE TO-251
JEDEC STYLE TO-252
Ordering Information
PART NUMBER PACKAGE BRAND
RHRD660 TO-251 RHR660
RHRD660S TO-252 RHR660
NOTE: Whenordering,usethe entire partnumber.Add the suffix9A
to obtain the TO-252 variant in tape and reel, e.g. RHRD660S9A.
K
A
ANODE
CATHODE
CATHODE
(FLANGE)
ANODE
CATHODE
CATHODE
(FLANGE)
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRD660, RHRD660S UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 152oC) 6A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20kHz) 12 A
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz) 60 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD50 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 10 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ-65 to 175 oC
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL300 oC
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG 260 oC
Data Sheet January 2000
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Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
VFIF = 6A - - 2.1 V
IF = 6A, TC = 150oC - - 1.7 V
IRVR = 600V - - 100 µA
VR = 600V, TC = 150oC - - 500 µA
trr IF = 1A, dIF/dt = 200A/µs- - 30 ns
IF = 6A, dIF/dt = 200A/µs- - 35 ns
taIF = 6A, dIF/dt = 200A/µs - 16 - ns
tbIF = 6A, dIF/dt = 200A/µs - 8.5 - ns
QRR IF = 6A, dIF/dt = 200A/µs - 45 - nC
CJVR = 10V, IF = 0A - 20 - pF
RθJC --3
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE
VF, FORWARD VOLTAGE (V)
1
30
0.5
10
0 0.5 2.5121.5
IF, FORWARD CURRENT (A)
3
25oC
175oC100oC
0 600400300200
100
0.01
0.1
1
10
1000
100 500
100
o
C
175
o
C
25
o
C
V
R
, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
RHRD660, RHRD660S
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FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves (Continued)
IF, FORWARD CURRENT (A)
0
20
30
25
tb
15 ta
10
t, RECOVERY TIMES (ns)
5
160.5
trr
TC = 25oC, dIF/dt = 200A/µs
ta
trr
tb
IF, FORWARD CURRENT (A)
0
50
40
30
20
t, RECOVERY TIMES (ns)
10
160.5
TC = 100oC, dIF/dt = 200A/µs
tb
ta
trr
IF, FORWARD CURRENT (A)
0
60
75
45
t, RECOVERY TIMES (ns)
30
15
160.5
TC = 175oC, dIF/dt = 200A/µs
5
1
0155 160 170150 175165
2
3
4
DC
TC, CASE TEMPERATURE (oC)
SQ. WAVE
IF(AV), AVERAGE FORWARD CURRENT (A)
6
140 145
VR, REVERSE VOLTAGE (V)
20
10
0
40
0 50 100 150 200
CJ, JUNCTION CAPACITANCE (pF)
50
30
RHRD660, RHRD660S
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Test Circuits and Waveforms
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1= IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1A
L = 20mH
IV
t0t1t2
IL
VAVL
t
IL
RHRD660, RHRD660S
