A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specifications are subject to change without notice.
STATIC ELECTRICAL CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
VBR IR = 10 µA MP61001 200 V
MP61002 200
MP61003 200
MP61004 100
MP61005 100
CJ10 VR = 10 V f = 1 MHz MP61001 0.03 pF
MP61002 0.04
MP61003 0.05
MP61004 0.06
MP61005 0.07
SILICON PIN DIODE
MP61000 SERIES
DESCRIPTION:
The ASI MP61000 Series of Silicon
PIN Diodes are Designed for use in
Switches, Attenuators, and Phase
Shifters.
FEATURES INCLUDE:
• Low Series Resistance
• Fast switching speed
MAXIMUM RATINGS
IF 50 mA
VR UP TO RATED VBR
IP ±20 dBm
TJ -55 to +175 °C
TSTG -55 to +200 °C
PACKAGE STYLE
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 2/2
MP6100 SERIES
SILICON PIN DIODE
S
p
ecifications are sub
j
ect to chan
g
e without notice.
DYNAMIC ELECTRICAL CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
TL IF = 10 mA MP61001 50 nS
MP61002 50
MP61003 50
MP61004 15
MP61005 15
τ MP61001 20 nS
MP61002 20
MP61003 20
MP61004 9.0
MP61005 9.0
Rs IF = 20 mA f = 1.0 GHz MP61001 3.0 Ω
MP61002 3.0
MP61003 3.0
MP61004 2.0
MP61005 2.0
