1 Publication Order Number :
CPH3351/D
www.onsemi.com
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 2
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
CPH3351
Features
Low On-Resistan c e
4V Drive
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Symbol Value Unit
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID 1.8 A
Drain Current (Pulse)
PW 10μs, duty cycle 1% IDP 7.2 A
Power Dissipation
When mounted on ceramic substrate
(900mm2
×
0.8mm)
PD 1.0
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg 55 to +150 °C
Thermal Resistance Ratings
Parameter Symbol Value Unit
Junction to Ambient
RθJA 125
°C/W
When mounted on ceramic substrate
(900mm2
×
0.8mm)
Power MOSFET
60V, 250m,
1.8A, Single P-Channel
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
TL
Electrical Connection
P-Channel
Packing Type : TL Marking
WH
LOT No.
VDSS R
DS(on) Max ID Max
60V
250m@ 10V
1.8A
330m@ 4.5V
350m@ 4V
1
2
3
1:Gate
2:Source
3:Drain
CPH3351
www.onsemi.com
2
Electrical Characteristics at Ta = 25°C
Parameter Symbol Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS I
D=1mA, VGS=0V 60 V
Zero-Gate Voltage Drain Current IDSS V
DS=60V, VGS=0V 1μA
Gate to Source Leakage Current IGSS V
GS=±16V, VDS=0V
±10 μA
Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transconductance gFS V
DS=10V, ID=1A 2.7 S
Static Drain to Source On-State Resistance
RDS(on)1 ID=1A, VGS=10V 190 250 mΩ
RDS(on)2 ID=0.5A, VGS=4.5V 235 330 mΩ
RDS(on)3 ID=0.5A, VGS=4V 250 350 mΩ
Input Capacitance Ciss
VDS=20V, f=1MHz
262 pF
Output Capacitance Coss 29 pF
Reverse Transfer Capacitance Crss 19 pF
Turn-ON Delay Time td(on)
See specified Test Circuit
5.1 ns
Rise Time t
r
5.4 ns
Turn-OFF Delay Time td(off) 34 ns
Fall Time tf 19 ns
Total Gate Charge Qg
VDS=30V, VGS=10V, ID=1.8A
6.0 nC
Gate to Source Charge Qgs 0.83 nC
Gate to Drain “Miller” Charge Qgd 1.3 nC
Forward Diode Voltage VSD I
S=1.8A, VGS=0V 0.82 1.2 V
Switching Time Test Circuit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
PW=10μs
D.C.1%
P. G 50Ω
G
S
D
ID=--1A
RL=30Ω
V
DD
=
-- 3 0
V
VOUT
CPH3351
VIN
0V
--10V
V
IN
CPH3351
www.onsemi.com
3
CPH3351
www.onsemi.com
4
CPH3351
www.onsemi.com
5
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject toall
applicable copyright laws and is not for resale in any manner.
0.6
2.4
0.95 0.95
1.4
Package Dimensions
CPH3351-TL-H / CPH 3351-TL-W
CPH3
CASE 318BA
ISSUE O
unit : mm
1 : Gate
2 : Source
3 : Drain
Recommended
Soldering Footprint
ORDERING INFORMATION
Device Package
Shipping Note
CPH3351-TL-H
CPH3, SC-59
SOT-23, TO-236 3,000 pcs. / Tape & Reel
Pb-Free
and
Halogen Free
CPH3351-TL-W
Note on usage : Since the CPH3351 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.