2N3960UB Qualified Levels: JAN, JANTX, AND JANTXV NPN Silicon Switching Transistor Compliant Qualified per MIL-PRF-19500/399 DESCRIPTION This 2N3960UB epitaxial planar transistor is military qualified up to the JANTXV level for highreliability applications. It features a low profile ceramic UB package. This device is also available in a thru-hole TO-18 package. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent of JEDEC registered 2N3960 number * JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/366. UB Package (See part nomenclature for all available options.) * RoHS compliant Also available in: TO-18 package (leaded) 2N3960 APPLICATIONS / BENEFITS * * * * General purpose transistors for medium power applications requiring high frequency switching Low profile ceramic package Lightweight Military and other high-reliability applications MAXIMUM RATINGS @ T C = +25 C unless otherwise noted Parameters / Test Conditions Symbol Value Unit Junction & Storage Temperature Range TJ , Tstg -65 to +200 C Collector-Emitter Voltage V CEO 12 V Collector-Base Voltage V CBO 20 V V EBO 4.5 V PT 400 mW Emitter-Base Voltage Total Power Dissipation @ TA = +25 C (1) Notes: 1. Derate linearly 2.3 mW/C above TA = +25 C MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0161-1, Rev. 1 (10/15/13) (c)2013 Microsemi Corporation Page 1 of 4 2N3960UB MECHANICAL and PACKAGING * * * * * * CASE: Ceramic with kovar lid TERMINALS: Gold plating over nickel under plate. MARKING: Part number, date code, manufacturer's ID TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities. WEIGHT: Less than 0.04 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3960 UB Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial V CBO V CE V CEO V CC V EB V EBO JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol IB IC V CB Surface Mount package Base current: The value of the dc current into the base terminal. Collector current: The value of the dc current into the collector terminal. Collector-base voltage: The dc voltage between the collector and the base. Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. Collector-emitter voltage: The dc voltage between the collector and the emitter. Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. Emitter-base voltage: The dc voltage between the emitter and the base Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited. T4-LDS-0161-1, Rev. 1 (10/15/13) (c)2013 Microsemi Corporation Page 2 of 4 2N3960UB ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I C = 10 A, pulsed Collector-Base Cutoff Current V CB = 20 V Emitter-Base Cutoff Current V EB = 4.5 V Symbol V (BR)CEO Min. Max. Unit V 12 I CBO 10 A I EBO 10 A Collector-Emitter Cutoff Current V CE = 10 V, V EB = 0.4 V V CE = 10 V, V EB = 2.0 V I CEX1 I CEX2 1 5 A nA ON CHARACTERISTICS (1) Forward-Current Transfer Ratio I C = 1.0 mA, V CE = 1 V I C = 10 mA, V CE = 1 V I C = 30 mA, V CE = 1 V h FE Collector-Emitter Saturation Voltage I C = 1.0 mA, I B = 0.1 mA I C = 30 mA, I B = 3.0 mA 40 60 30 300 V CE(sat) 0.2 0.3 V V BE 0.8 1.0 V C obo 2.5 pF C ibo 2.5 pF Base-Emitter Saturation Voltage I C = 1.0 mA, V CE = 1.0 V I C = 30 mA, V CE = 1.0 V DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude I C = 5.0 mA, V CE = 4 V, f = 100 MHz I C = 10 mA, V CE = 4 V, f = 100 MHz I C = 30 mA, V CE = 4 V, f = 100 MHz Output Capacitance V CB = 4 V, I E = 0, 100 kHz < f < 1 MHz Input Capacitance V EB = 0.5 V, I C = 0, 100 kHz < f < 1.0 MHz |h fe | 13 14 12 (1) Pulse Test: pulse width = 300 s, duty cycle < 2.0% T4-LDS-0161-1, Rev. 1 (10/15/13) (c)2013 Microsemi Corporation Page 3 of 4 2N3960UB PACKAGE DIMENSIONS Lid Symbol BH BL BW CL CW LL 1 LL 2 Dimensions Millimeters Max Min Max 0.056 1.17 1.42 0.128 2.92 3.25 0.108 2.16 2.74 0.128 3.25 0.108 2.74 0.038 0.56 0.97 0.035 0.43 0.89 Inch Min 0.046 0.115 0.085 0.022 0.017 Note Symbol LS 1 LS 2 LW r r1 r2 Dimensions Millimeters Max Min Max 0.040 0.89 1.02 0.079 1.80 2.01 0.024 0.41 0.61 0.008 0.203 0.012 0.305 0.022 0.559 Inch Min 0.035 0.071 0.016 - Note NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for information only. Hatched areas on package denote metallized areas. Lid material: Kovar Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. T4-LDS-0161-1, Rev. 1 (10/15/13) (c)2013 Microsemi Corporation Page 4 of 4