
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.65 V IF = 50mA
Reverse Current (IR)10μAV
R = 4V
Output Collector-emitter Breakdown (BVCEO)
IS5, ISD5, ISQ5 70 V IC = 1mA
IS1, ISD1, ISQ1, IS74, ISD74, ISQ74 50 V ( Note 2)
Emitter-collector Breakdown (BVECO)6 V I
E = 100μA
Collector-emitter Dark Current (ICEO)50nAV
CE = 10V
Coupled Current Transfer Ratio (CTR) (Note 2)
IS1, ISD1, ISQ1 20 300 % 10mA IF , 10V VCE
IS5, ISD5, ISQ5 50 400 % 10mA IF , 10V VCE
IS74, ISD74, ISQ74 12.5 % 16mA IF , 5V VCE
Saturated Current Transfer Ratio
IS1, ISD1, ISQ1 75 % 10mA IF , 0.4V VCE
IS5, ISD5, ISQ5 100 % 10mA IF , 0.4V VCE
IS74, ISD74, ISQ74 12.5 % 16mA IF , 0.5V VCE
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
Input to Output Isolation Voltage VISO 7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Rise Time t r 2.6 μsI
F = 5mA
Output Fall Time tf 2.2 μsV
CC = 5V, RL = 75Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
26/11/08
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage T emperature -40°C to + 125°C
Operating Temperature -25°C to + 100°C
Lead Soldering T emperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse V oltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter V oltage BVCEO
IS5, ISD5, ISQ5 70V
IS1,ISD1,ISQ1,IS74,ISD74,ISQ74 50V
Emitter-collector V oltage BVECO 6V
Collector Current 50mA
Power Dissipation 150mW
POWER DISSIPATION
T otal Power Dissipation 170mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
DB92163