1
®
FN3182.8
ICL7665S
CMOS Micropower Over/Under Voltage
Detector
The ICL7665S Super CMOS Micropower Over/Under
Voltage Detector contains two low power, individually
programmable Voltage detectors on a single CMOS chip.
Requiring typically 3µA for operation, the device is intended
for battery-operated systems and instruments which require
high or low voltage warnings, settable trip points, or fault
monitoring and correction. The trip points and hysteresis of
the two voltage detectors are individually programmed via
external resistors. An internal bandgap-type reference
provides an accurate threshold voltage while operating from
any supply in the 1.6V to 16V range.
The ICL7665S, Super Programmable Over/Under Voltage
Detector is a direct replacement for the industry standard
ICL7665B offering wider operating voltage and temperature
ranges, improved threshold accuracy (ICL7665SA), and
temperature coefficient, and guaranteed maximum supply
current. All improvements are highlighted in the electrical
characteristics section. All critical parameters are
guaranteed over the entire commercial and industrial
temperature ranges.
Pinout
ICL7665S
(SOIC, PDIP)
TOP VIEW
Features
Guaranteed 10µA Maximum Quiescent Current Over
Temperature
Guaranteed Wider Operating Voltage Range Over Entire
Operating Temperature Range
2% Threshold Accuracy (ICL7665SA)
Dual Comparator with Precision Internal Reference
100ppm/°C Temperature Coefficient of Threshold Voltage
100% Tested at 2V
Output Current Sinking Ability . . . . . . . . . . . . Up to 20mA
Individually Programmable Upper and Lower Trip Voltages
and Hysteresis Levels
Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
Pocket Pagers
Portable Instrumentation
Charging Systems
Memory Power Back-Up
Battery Operated Systems
Portable Computers
Level Detectors
OUT 1
HYST 1
SET 1
GND
1
2
3
4
8
7
6
5
V+
OUT 2
SET 2
HYST 2
Data Sheet April 5, 2006
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright GE/Intersil 1983-84, GE/RCA 1987, Harris Corp. 1994, Intersil Americas Inc. 1999, 2004-2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
2FN3182.8
April 5, 2006
Ordering Information
PART NUMBER PART MARKING
TEMP.
RANGE (°C) PACKAGE
PKG.
DWG. #
ICL7665SACBA* 7665SACBA 0 to 70 8 Ld SOIC (N) M8.15
ICL7665SACBAZ* (Note) 7665SACBAZ 0 to 70 8 Ld SOIC (N) (Pb-free) M8.15
ICL7665SACBAZA* (Note) 7665SACBAZ 0 to 70 8 Ld SOIC (N) (Pb-free) M8.15
ICL7665SACPA 7665SACPA 0 to 70 8 Ld PDIP E8.3
ICL7665SACPAZ (Nore) 7665SACPAZ 0 to 70 8 Ld PDIP** (Pb-free) E8.3
ICL7665SAIBA* 7665SAIBA -40 to 85 8 Ld SOIC (N) M8.15
ICL7665SAIBAZA* (Note) 7665SAIBAZ -40 to 85 8 Ld SOIC (N) (Pb-free) M8.15
ICL7665SAIPA 7665SAIPA -40 to 85 8 Ld PDIP E8.3
ICL7665SAIPAZ (Note) 7665SAIPAZ -40 to 85 8 Ld PDIP** (Pb-free) E8.3
ICL7665SCBA* 7665SCBA 0 to 70 8 Ld SOIC (N) M8.15
ICL7665SCBAZ* (Note) 7665SCBAZ 0 to 70 8 Ld SOIC (N) (Pb-free) M8.15
ICL7665SCBAZA* (Note) 7665SCBAZ 0 to 70 8 Ld SOIC (N) (Pb-free) M8.15
ICL7665SCPA 7665SCPA 0 to 70 8 Ld PDIP E8.3
ICL7665SCPAZ (Note) 7665SCPAZ 0 to 70 8 Ld PDIP** (Pb-free) E8.3
ICL7665SIBA* 7665SIBA -40 to 85 8 Ld SOIC (N) M8.15
ICL7665SIBAZ* (Note) 7665SIBAZ -40 to 85 8 Ld SOIC (N) (Pb-free) M8.15
ICL7665SIBAZA* (Note) 7665SIBAZ -40 to 85 8 Ld SOIC (N) (Pb-free) M8.15
*Add “-T” suffix for tape and reel.
**Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
ICL7665S
3FN3182.8
April 5, 2006
Absolute Maximum Ratings Thermal Information
Supply Voltage (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +18V
Output Voltages OUT1 and OUT2 . . . . . . . . . . . . . . . . . -0.3V to 18V
(with respect to GND) (Note 2)
Output Voltages HYST1 and HYST2 . . . . . . . . . . . . . .-0.3V to +18V
(with respect to V+) (Note 2)
Input Voltages SET1 and SET2 . . . . . (GND -0.3V) to (V+ V- +0.3V)
(Note 2)
Maximum Sink Output OUT1 and OUT2 . . . . . . . . . . . . . . . . . 25mA
Maximum Source Output Current
HYST1 and HYST2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25mA
Operating Conditions
Temperature Range
ICL7665SC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
ICL7665SI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to 85°C
Thermal Resistance (Typical, Note 1) θJA (°C/W)
PDIP Package* . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Maximum Junction Temperature (Plastic) . . . . . . . . . . . . . . . . 150°C
Maximum Junction Temperature (CERDIP). . . . . . . . . . . . . . . 175°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
*Pb-free PDIPs can be used for through hole wave solder processing
only. They are not intended for use in Reflow solder processing
applications.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
2. Due to the SCR structure inherent in the CMOS process used to fabricate these devices, connecting any terminal to voltages greater than (V+
+0.3V) or less than (GND - 0.3V) may cause destructive device latchup. For these reasons, it is recommended that no inputs from external
sources not operating from the same power supply be applied to the device before its supply is established, and that in multiple supply systems,
the supply to the ICL7665S be turned on first. If this is not possible, current into inputs and/or outputs must be limited to ±0.5mA and voltages
must not exceed those defined above.
Electrical Specifications The specifications below are applicable to both the ICL7665S and ICL7665SA. V+ = 5V, TA = 25°C,
Test Circuit Figure 7. Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Operating Supply Voltage V+ ICL7665S TA = 25°C1.6-16V
0°C TA 70°C1.8-16V
-25°C TA 85°C1.8-16V
ICL7665SA 0°C TA 70°C1.8-16V
-25°C TA 85°C1.8-16V
Supply Current I+ GND VSET1, VSET2 V+, All Outputs Open Circuit
0°C TA 70°C V+ = 2V - 2.5 10 µA
V+ = 9V - 2.6 10 µA
V+ = 15V - 2.9 10 µA
-40°C TA 85°C V+ = 2V - 2.5 10 µA
V+ = 9V - 2.6 10 µA
V+ = 15V - 2.9 10 µA
Input Trip Voltage VSET1 ICL7665S 1.20 1.30 1.40 V
VSET2 1.20 1.30 1.40 V
VSET1 ICL7665SA 1.275 1.30 1.325 V
VSET2 1.275 1.30 1.325 V
Temperature Coefficient of
VSET
VSET
T
ICL7665S - 200 - ppm
ICL7665SA - 100 - ppm
Supply Voltage Sensitivity of
VSET1, VSET2
VSET
VS
ROUT1, ROUT2, RHYST1, R2HYST2 = 1MΩ,
2V V+ 10V
-0.03-%/V
ICL7665S
4FN3182.8
April 5, 2006
Output Leakage Currents of
OUT and HYST
IOLK VSET = 0V or VSET 2V - 10 200 nA
IHLK - -10 -100 nA
IOLK V+ = 15V - - 2000 nA
IHLK - - -500 nA
Output Saturation Voltages VOUT1 VSET1 = 2V,
IOUT1 = 2mA
V+ = 2V - 0.2 0.5 V
V+ = 5V - 0.1 0.3 V
V+ = 15V - 0.06 0.2 V
Output Saturation Voltages VHYST1 VSET1 = 2V,
IHYST1 = -0.5mA
V+ = 2V - -0.15 -0.30 V
V+ = 5V - -0.05 -0.15 V
V+ = 15V - -0.02 -0.10 V
Output Saturation Voltages VOUT2 VSET2 = 0V,
IOUT2 = 2mA
V+ = 2V - 0.2 0.5 V
V+ = 5V - 0.15 0.3 V
V+ = 15V - 0.11 0.25 V
Output Saturation Voltages VHYST2 VSET2 = 2V V+ = 2V, IHYST2 = -0.2mA - -0.25 -0.8 V
V+ = 5V, IHYST2 = -0.5mA - -0.43 -1.0 V
V+ = 15V, IHYST2 = -0.5mA - -0.35 -0.8 V
VSET Input Leakage Current ISET GND VSET V+ - 0.01 10 nA
Input for Complete Output
Change
VSET ROUT = 4.7k,
RHYST = 20k,
VOUTLO = 1% V+,
VOUTHI = 99% V+
ICL7665S - 1.0 - mV
ICL7665SA - 0.1 - mV
Difference in Trip Voltages VSET1 -
VSET2
ROUT
, RHYST = 1mW - ±5±50 mV
Output/Hysteresis
Difference
ROUT
, RHYST = 1mW ICL7665S - ±1-mV
ICL7665SA - ±0.1 - mV
NOTES:
3. Derate above 25°C ambient temperature at 4mW/°C.
4. All significant improvements over the industry standard ICL7665 are highlighted.
Electrical Specifications The specifications below are applicable to both the ICL7665S and ICL7665SA. V+ = 5V, TA = 25°C,
Test Circuit Figure 7. Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICL7665S
5FN3182.8
April 5, 2006
Functional Block Diagram
AC Electrical Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OUTPUT DELAY TIMES
Input Going HI tSO1D VSET Switched between 1.0V to 1.6V
ROUT = 4.7k, CL = 12pF
RHYST = 20k, CL = 12pF
-85-µs
tSH1D -90-µs
tSO2D -55-µs
tSH2D -55-µs
Input Going LO tSO1D VSET Switched between 1.6V to 1.0V
ROUT = 4.7k, CL = 12pF
RHYST = 20k, CL = 12pF
-75-µs
tSH1D -80-µs
tSO2D -60-µs
tSH2D -60-µs
Output Rise Times tO1R VSET Switched between 1.0V to 1.6V
ROUT = 4.7k, CL = 12pF
RHYST = 20k, CL = 12pF
-0.6- µs
tO2R -0.8- µs
tH1R -7.5- µs
tH2R -0.7- µs
Output Fall Times tO1F VSET Switched between 1.0V to 1.6V
ROUT = 4.7k, CL = 12pF
RHYST = 20k, CL = 12pF
-0.6- µs
tO2F -0.7- µs
tH1F -4.0- µs
tH2F -1.8- µs
REF
SET1
SET2
+
-
+
-
V+
HYST2
HYST1
OUT2
OUT1
GND
CONDITIONS (Note 5)
VSET1 > 1.3V, OUT1 Switch ON, HYST1 Switch ON
VSET1 < 1.3V, OUT1 Switch OFF, HYST1 Switch OFF
VSET2 > 1.3V, OUT2 Switch OFF, HYST2 Switch ON
VSET2 < 1.3V, OUT2 Switch ON, HYST2 Switch OFF
NOTE:
5. See Electrical Specifications for exact thresholds.
ICL7665S
6FN3182.8
April 5, 2006
Typical Performance Curves
FIGURE 1. OUT1 SATURATION VOLTAGE AS A FUNCTION
OF OUTPUT CURRENT
FIGURE 2. OUT2 SATURATION VOLTAGE AS A FUNCTION
OF OUTPUT CURRENT
FIGURE 3. HYST1 OUTPUT SATURATION VOLTAGE vs
HYST1 OUTPUT CURRENT
FIGURE 4. HYST2 OUTPUT SATURATION VOLTAGE vs
HYST2 OUTPUT CURRENT
FIGURE 5. SUPPLY CURRENT AS A FUNCTION OF AMBIENT
TEMPERATURE
FIGURE 6. SUPPLY CURRENT AS A FUNCTION OF SUPPLY
VOLTAGE
VOLTAGE SATURATION (V)
2.0
1.5
1.0
0.5
0
0 5 10 15 20
IOUTOUT1 (mA)
V+ = 2V
V+ = 5V
V+ = 15V
V+ = 9V
0 5 10 15 20
2.0
1.5
1.0
0.5
0
VOLTAGE SATURATION (V)
IOUTOUT2 (mA)
V+ = 2V
V+ = 5V
V+ = 9V
V+ = 15V
-20 -16 -12 -8 -4 0
0
-0.4
-0.8
-1.2
-1.6
-2.0
HYST1 OUTPUT SATURATION VOLTAGE (V)
HYST1 OUTPUT CURRENT (mA)
V+ = 15V
V+ = 9V
V+ = 5V V+ = 2V
TA = 25°C
-5.0 -4.0 -3.0 -2.0 -1.0 0 0
-1.0
-2.0
-3.0
-4.0
-5.0
HYST2 OUTPUT CURRENT (mA)
HYST2 OUTPUT SATURATION VOLTAGE (V)
TA = 25°C
V+ = 15V
V+ = 9V
V+ = 5V V+ = 2V
V+ = 2V
V+ = 15V V+ = 9V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
-25 0 +20 +40 +60
AMBIENT TEMPERATURE (°C)
SUPPLY CURRENT (µA)
0V VSET1, VSET2 V+ 0V VSET1, VSET2 V+
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 2 4 6 810121416
SUPPLY VOLTAGE (V+)
SUPPLY CURRENT (µA)
TA = -20°C
TA = 25°C
TA = 70°C
ICL7665S
7FN3182.8
April 5, 2006
Detailed Description
As shown in the Functional Diagram, the ICL7665S consists
of two comparators which compare input voltages on the
SET1 and SET2 terminals to an internal 1.3V bandgap
reference. The outputs from the two comparators drive
open-drain N-channel transistors for OUT1 and OUT2, and
open-drain P-channel transistors for HYST1 and HYST2
outputs. Each section, the Undervoltage Detector and the
Overvoltage Detector, is independent of the other, although
both use the internal 1.3V reference. The offset voltages of
the two comparators will normally be unequal so VSET1 will
generally not quite equal VSET2.
The input impedance of the SET1 and SET2 pins are
extremely high, and for most practical applications can be
ignored. The four outputs are open-drain MOS transistors,
and when ON behave as low resistance switches to their
respective supply rails. This minimizes errors in setting up
the hysteresis, and maximizes the output flexibility. The
operating currents of the bandgap reference and the
comparators are around 100nA each.
Precautions
Junction isolated CMOS devices like the ICL7665S have an
inherent SCR or 4-layer PNPN structure distributed
throughout the die. Under certain circumstances, this can be
triggered into a potentially destructive high current mode.
This latchup can be triggered by forward-biasing an input or
output with respect to the power supply, or by applying
excessive supply voltages. In very low current analog
circuits, such as the ICL7665S, this SCR can also be
triggered by applying the input power supply extremely
rapidly (“instantaneously”), e.g., through a low impedance
battery and an ON/OFF switch with short lead lengths. The
rate-of-rise of the supply voltage can exceed 100V/µs in
such a circuit. A low impedance capacitor (e.g., 0.05µF disc
ceramic) between the V+ and GND pins of the ICL7665S
can be used to reduce the rate-of-rise of the supply voltage
in battery applications. In line operated systems, the rate-of-
rise of the supply is limited by other considerations, and is
normally not a problem.
If the SET voltages must be applied before the supply
voltage V+, the input current should be limited to less than
0.5mA by appropriate external resistors, usually required for
voltage setting anyway. A similar precaution should be taken
with the outputs if it is likely that they will be driven by other
circuits to levels outside the supplies at any time.
Simple Threshold Detector
Figure 9 shows the simplest connection of the ICL7665S for
threshold detection. From the graph 9B, it can be seen that
at low input voltage OUT1 is OFF, or high, while OUT2 is
ON, or low. As the input rises (e.g., at power-on) toward
VNOM (usually the eventual operating voltage), OUT2 goes
high on reaching VTR2. If the voltage rises above VNOM as
much as VTR1, OUT1 goes low. The equation giving VSET1
and VSET2 are from Figure 9A:
Since the voltage to trip each comparator is nominally 1.3V,
the value VIN for each trip point can be found from
and
1
2
3
4
8
7
6
5
OUT1
HYST1
SET1
GND
V+
OUT2
SET2
HYST2
INPUT
HYST2
OUT2
OUT1
V+
20
k12
pF 12
pF 12
pF 12
pF
20
k
4.7k
HYST1
4.7
k
1.0V
1.6V
FIGURE 7. TEST CIRCUITS
VSET1,
VSET2
tSO1D
tO1F tSO1D
tO1R
tSH1D
tH1R
tSH1D
tH1F
tSO2D
tO2R
tSO2D
tO2F
tSH2D
tH2R
tSH2D
tH2F
1.6V
1.0V
V+
GND
GND
GND
GND
(5V)
V+
(5V)
V+
(5V)
V+
(5V)
INPUT
OUT1
HYST1
OUT2
HYST2
FIGURE 8. SWITCHING WAVEFORMS
VSET1 VIN
R11
R11 R21
+()
--------------------------------
=VSET2 VIN
R12
R12 R22
+()
--------------------------------
=
VTR1 VSET1
R11 R21
+()
R11
----------------------------------1.3
R11 R21
+()
R11
---------------------------------- for detector 1==
VTR2 VSET2
R12 R22
+()
R12
----------------------------------1.3
R12 R22
+()
R12
---------------------------------- for detector 2==
ICL7665S
8FN3182.8
April 5, 2006
Either detector may be used alone, as well as both together,
in any of the circuits shown here.
When VIN is very close to one of the trip voltage, normal
variations and noise may cause it to wander back and forth
across this level, leading to erratic output ON and OFF
conditions. The addition of hysteresis, making the trip points
slightly different for rising and falling inputs, will avoid this
condition.
Threshold Detector with Hysteresis
Figure 10A shows how to set up such hysteresis, while
Figure 10B shows how the hysteresis around each trip point
produces switching action at different points depending on
whether VIN is rising or falling (the arrows indicated direction
of change. The HYST outputs are basically switches which
short out R31 or R32 when VIN is above the respective trip
point. Thus if the input voltage rises from a low value, the trip
point will be controlled by R1N, R2N, and R3N, until the trip
point is reached. As this value is passed, the detector
changes state, R3N is shorted out, and the trip point
becomes controlled by only R1N and R2N, a lower value.
The input will then have to fall to this new point to restore the
initial comparator state, but as soon as this occurs, the trip
point will be raised again.
An alternative circuit for obtaining hysteresis is shown in
Figure 11. In this configuration, the HYST pins put the extra
resistor in parallel with the upper setting resistor. The values
of the resistors differ, but the action is essentially the same.
The governing equations are given in Table 1. These ignore
the effects of the resistance of the HYST outputs, but these
can normally be neglected if the resistor values are above
about 100k.
FIGURE 9A. CIRCUIT CONFIGURATION FIGURE 9B. TRANSFER CHARACTERISTICS
FIGURE 9. SIMPLE THRESHOLD DETECTOR
OUT1
SET1 SET2
OUT2
V+
R21
RP2
VIN
RP1
R22
R11 R12
OFF
VOUT
ON
VTR2 VNOM VTR1
DETECTOR 2 DETECTOR 1
FIGURE 10A. CIRCUIT CONFIGURATION FIGURE 10B. TRANSFER CHARACTERISTICS
FIGURE 10. THRESHOLD DETECTOR WITH HYSTERESIS
HYST1
SET1 SET2
HYST2
V+
VIN
OUT1 OUT2
R31 R32
R12
R11
R21 R22
OVERVOLTAGE OVERVOLTAGE
VL2 VU2 VL1 VU1
ON
OUT
OFF
VNOM
DETECTOR 2 DETECTOR 1
VIN
VTR2 VSET2
R12 R22
+()
R12
----------------------------------1.3
R12 R22
+()
R12
---------------------------------- for detector 2==
ICL7665S
9FN3182.8
April 5, 2006
Applications
Single Supply Fault Monitor
Figure 12 shows an over/under voltage fault monitor for a
single supply. The overvoltage trip point is centered around
5.5V and the undervoltage trip point is centered around 4.5V.
Both have some hysteresis to prevent erratic output ON and
OFF conditions. The two outputs are connected in a wired
OR configuration with a pullup resistor to generate a power
OK signal.
Multiple Supply Fault Monitor
The ICL7665S can simultaneously monitor several supplies
when connected as shown in Figure 13. The resistors are
chosen such that the sum of the currents through R21A,
R21B, and R31 is equal to the current through R11 when the
two input voltage are at the desired low voltage detection
point. The current through R11 at this point is equal to
1.3V/R11. The voltage at the VSET input depends on the
voltage of both supplies being monitored. The trip voltage of
one supply while the other supply is at the nominal voltage
will be different that the trip voltage when both supplies are
below their nominal voltages.
The other side of the ICL7665S can be used to detect the
absence of negative supplies. The trip points for OUT1
depend on both the negative supply voltages and the actual
voltage of the +5V supply.
TABLE 1. SET-POINT EQUATIONS
NO HYSTERESIS
Overvoltage VTRIP = R11 + R21
R11
x VSET1
Overvoltage VTRIP = R12 + R22
R12
x VSET2
HYSTERESIS PER FIGURE 10A
VU1 =R11 + R21 + R31
R11
x VSET1
Overvoltage VTRIP
VL1 =R11 + R21
R11
x VSET1
VU2 =R12 + R22 + R32
R12
x VSET2
Undervoltage VTRIP
VL2 =R12 + R22
R12
x VSET2
HYSTERESIS PER FIGURE 11
VU1 =R11 + R21
R11
x VSET1
Overvoltage VTRIP
VL1 =
R11 + R21R31
R21 + R31 x VSET1
R11
VU2 =R12 + R22
R12
x VSET2
Overvoltage VTRIP
VL2 =R12 + R22R32
R22 + R32 x VSET2
R12
OUT1
SET1 SET2
OUT2
V+
R21
RP
VIN
RP
R22
R11 R12
HYST1 HYST2
R31 R32
FIGURE 11. AN ALTERNATIVE HYSTERESIS CIRCUIT
HYST1
VSET1 VSET2
HYST2
V+
OUT1 OUT2
324k
13M
5%
100k
249k
7.5M
5%
+5V SUPPLY
POWER
OK
100k
1M
V+
OPEN VOLTAGE
DETECTOR
VU = 5.55V
VL = 5.45V
OPEN VOLTAGE
DETECTOR
VU = 4.55V
VL = 4.45V
R22
R32
R12
R11
R31
R21
FIGURE 12. FAULT MONITOR FOR A SINGLE SUPPLY
ICL7665S
10 FN3182.8
April 5, 2006
Combination Low Battery Warning and Low
Battery Disconnect
When using rechargeable batteries in a system, it is
important to keep the batteries from being over discharged.
The circuit shown in Figure 14 provides a low battery
warning and also disconnects the low battery from the rest of
the system to prevent damage to the battery. OUT1 is used
to shutdown the ICL7663S when the battery voltage drops to
the value where the load should be disconnected. As long as
VSET1 is greater than 1.3V, OUT1 is low, but when VSET1
drops below 1.3V, OUT1 goes high shutting off the
ICL7663S. OUT2 is used for low battery warning. When
VSET2 is greater than 1.3V, OUT2 is high and the low battery
warning is on. When VSET2 drops below 1.3V, OUT2 is low
and the low battery warning goes off. The trip voltage for low
battery warning can be set higher than the trip voltage for
shutdown to give advance low battery warning before the
battery is disconnected.
Power Fail Warning and Powerup/Powerdown
Reset
Figure 15 shows a power fail warning circuit with
powerup/powerdown reset. When the unregulated DC input
is above the trip point, OUT1 is low. When the DC input
drops below the trip point, OUT1 shuts OFF and the power
fail warning goes high. The voltage on the input of the 7805
will continue to provide 5V out at 1A until VIN is less than
7.3V, this circuit will provide a certain amount of warning
before the 5V output begins to drop.
The ICL7665S OUT2 is used to prevent a microprocessor
from writing spurious data to a CMOS battery backup
memory by causing OUT2 to go low when the 7805 5V
output drops below the ICL7665S trip point.
FIGURE 13. MULTIPLE SUPPLY FAULT MONITOR
HYST1
VSET1 VSET2
HYST2
V+
OUT1 OUT2
274k
R21 100k
22
POWER
OK
301
R11
+5V
-15V-5V
M
k
787
k+5V
1M
1.02M
R21A
R21B
22M
49.9k
+5V
+15V
HYST1
SET1 SET2
HYST2
V+
OUT1 OUT2
R31 R32
R12
R11
R21 R22
GND
+
-
LOW BATTERY SHUTDOWN
1M
V+
OUT1
SHUTDOWN VSET
OUT2V+
GND
1M
LOW BATTERY WARNING
SENSE
100
+5V
1A
ICL7663S
ICL7665S
FIGURE 14. LOW BATTERY WARNING AND LOW BATTERY DISCONNECT
ICL7665S
11 FN3182.8
April 5, 2006
Simple High/Low Temperature Alarm
Figure 16 illustrates a simple high/low temperature alarm
which uses the ICL7665S with an NPN transistor. The
voltage at the top of R1 is determined by the VBE of the
transistor and the position of R1’s wiper arm. This voltage
has a negative temperature coefficient. R1 is adjusted so
that VSET2 equals 1.3V when the NPN transistor’s
temperature reaches the temperature selected for the high
temperature alarm. When this occurs, OUT2 goes low. R2 is
adjusted so that VSET1 equals 1.3V when the NPN
transistor’s temperature reaches the temperature selected
for the low temperature alarm. When the temperature drops
below this limit, OUT1 goes low.
AC Power Fail and Brownout Detector
Figure 17 shows a circuit that detects AC undervoltage by
monitoring the secondary side of the transformer. The
capacitor, C1, is charged through R1 when OUT1 is OFF.
With a normal 100 VAC input to the transformer, OUT1 will
discharge C1 once every cycle, approximately every 16.7ms.
When the AC input voltage is reduced, OUT1 will stay OFF,
so that C1 does not discharge. When the voltage on C1
reaches 1.3V, OUT2 turns OFF and the power fail warning
goes high. The time constant, R1C1, is chosen such that it
takes longer than 16.7ms to charge C1 1.3V.
HYST1
VSET1 VSET2
HYST2
V+
OUT1 OUT2
5.86k
130k
BACKUP
BATTERY
7805
5V REGULATOR
UNREGULATED
DC INPUT
1M
22M
2.2M
1M
715k
1M
RESET OR
WRITE
ENABLE
POWER
FAIL
WARNING
470µF
4700µF
ICL7665S
FIGURE 15. POWER FAIL WARNING AND POWERUP/POWERDOWN RESET
ICL7665S
12 FN3182.8
April 5, 2006
HYST1
VSET1 VSET2
HYST2
V+
OUT1 OUT2
22k
1.5M
22M
1M
27k
R4
R5
V+
1M
R7
R2
R6
ALARM SIGNAL
FOR DRIVING
LEDS, BELLS,
ETC.
LOW TEMPERATURE
LIMIT ADJUST
+-
5V
470k
R3
TEMPERATURE
SENSOR
(GENERAL PURPOSE
NPN TRANSISTOR)
10k
HIGH
TEMPERATURE
LIMIT ADJUST
R1
ICL7665S
FIGURE 16. SIMPLE HIGH/LOW TEMPERATURE ALARM
110VAC
60Hz
20V
CENTERED
TAPPED
TRANS.
4700µF
601k
100k
HYST1
VSET1 VSET2
HYST2
OUT1 OUT2
1M
1M
7805
5V REGULATOR
5V, 1A
C1
R1
1M
+5V
POWER FAIL
WARNING
ICL7665S
FIGURE 17. AC POWER FAIL AND BROWNOUT DETECTOR
ICL7665S
13 FN3182.8
April 5, 2006
ICL7665S
Dual-In-Line Plastic Packages (PDIP)
C
L
E
eA
C
eB
eC
-B-
E1
INDEX 12 3 N/2
N
AREA
SEATING
BASE
PLANE
PLANE
-C-
D1
B1 Be
D
D1
A
A2
L
A1
-A-
0.010 (0.25) C AMBS
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between
English and Metric dimensions, the inch dimensions control.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication No. 95.
4. Dimensions A, A1 and L are measured with the package seated
in JEDEC seating plane gauge GS-3.
5. D, D1, and E1 dimensions do not include mold flash or protru-
sions. Mold flash or protrusions shall not exceed 0.010 inch
(0.25mm).
6. E and are measured with the leads constrained to be per-
pendicular to datum .
7. eB and eC are measured at the lead tips with the leads uncon-
strained. eC must be zero or greater.
8. B1 maximum dimensions do not include dambar protrusions.
Dambar protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3,
E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch
(0.76 - 1.14mm).
eA-C-
E8.3 (JEDEC MS-001-BA ISSUE D)
8 LEAD DUAL-IN-LINE PLASTIC PACKAGE
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A - 0.210 - 5.33 4
A1 0.015 - 0.39 - 4
A2 0.115 0.195 2.93 4.95 -
B 0.014 0.022 0.356 0.558 -
B1 0.045 0.070 1.15 1.77 8, 10
C 0.008 0.014 0.204 0.355 -
D 0.355 0.400 9.01 10.16 5
D1 0.005 - 0.13 - 5
E 0.300 0.325 7.62 8.25 6
E1 0.240 0.280 6.10 7.11 5
e 0.100 BSC 2.54 BSC -
eA0.300 BSC 7.62 BSC 6
eB- 0.430 - 10.92 7
L 0.115 0.150 2.93 3.81 4
N8 89
Rev. 0 12/93
14
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN3182.8
April 5, 2006
ICL7665S
Small Outline Plastic Packages (SOIC)
INDEX
AREA
E
D
N
123
-B-
0.25(0.010) C AMBS
e
-A-
L
B
M
-C-
A1
A
SEATING PLANE
0.10(0.004)
h x 45°
C
H0.25(0.010) BM M
α
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Inter-
lead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
M8.15 (JEDEC MS-012-AA ISSUE C)
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.0532 0.0688 1.35 1.75 -
A1 0.0040 0.0098 0.10 0.25 -
B 0.013 0.020 0.33 0.51 9
C 0.0075 0.0098 0.19 0.25 -
D 0.1890 0.1968 4.80 5.00 3
E 0.1497 0.1574 3.80 4.00 4
e 0.050 BSC 1.27 BSC -
H 0.2284 0.2440 5.80 6.20 -
h 0.0099 0.0196 0.25 0.50 5
L 0.016 0.050 0.40 1.27 6
N8 87
α -
Rev. 1 6/05