SBL(F,B)2030CT & SBL(F,B)2040CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES ITO-220AB * Guardring for overvoltage protection * Lower power losses, high efficiency * Low forward voltage drop * High forward surge capability 3 2 1 1 SBL20xxCT PIN 1 PIN 2 PIN 3 CASE 2 3 * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) SBLF20xxCT PIN 1 PIN 2 * Solder dip 260 C, 40 s (for TO-220AB and ITO-220AB package) PIN 3 TO-263AB K * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters and polarity protection application. 1 SBLB20xxCT PIN 1 PIN 2 * High frequency operation K HEATSINK MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 10 A x 2 VRRM 30 V, 40 V IFSM 250 A VF 0.60 V TJ max. 150 C MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL SBL2030CT SBL2040CT UNIT Maximum repetitive peak reverse voltage VRRM 30 40 V Working peak reverse voltage VRWM 21 28 V Maximum DC blocking voltage VDC 30 40 V Maximum average forward rectified current at TC = 105 C total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse surge current per diode at tp = 2.0 s, 1 kHz Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Document Number: 88730 Revision: 25-Apr-08 IF(AV) 20 10 A IFSM 250 A IRRM 1.0 A TJ, TSTG - 55 to + 150 C VAC 1500 V For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 SBL(F,B)2030CT & SBL(F,B)2040CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode (1) SYMBOL VALUE UNIT VF 0.6 V IR 1.0 50 mA 10 A Maximum instantaneous current at rated DC blocking voltage per diode (1) TC = 25 C TC = 100 C Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case per diode SYMBOL SBL SBLF SBLB UNIT RJC 2.0 4.0 2.0 C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB SBL2030CT-E3/45 1.85 45 50/tube Tube ITO-220AB SBLF2030CT-E3/45 1.99 45 50/tube Tube TO-263AB SBLB2030CT-E3/45 1.35 45 50/tube Tube TO-263AB SBLB2030CT-E3/81 1.33 81 800/reel Tape and reel TO-220AB SBL2030CTHE3/45 (1) 1.85 45 50/tube Tube ITO-220AB SBLF2030CTHE3/45 (1) 1.99 45 50/tube Tube TO-263AB SBLB2030CTHE3/45 (1) 1.35 45 50/tube Tube TO-263AB SBLB2030CTHE3/81 (1) 1.33 81 800/reel Tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 300 Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 30 25 TJ = 150 C 20 15 10 5 0 0 50 100 150 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 250 200 150 100 50 0 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88730 Revision: 25-Apr-08 SBL(F,B)2030CT & SBL(F,B)2040CT Vishay General Semiconductor 10 000 TJ = 125 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 Pulse Width = 300 s 1 % Duty Cycle 1 TJ = 25 C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 1.2 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 Transient Thermal Impedance (C/W) Instantaneous Reverse Leakage Current (mA) 100 10 TJ = 150 C 1 TJ = 75 C 0.1 0.01 TJ = 25 C 0.001 0 20 40 60 80 100 10 SBLF SBL, SBLB 1 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 88730 Revision: 25-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 SBL(F,B)2030CT & SBL(F,B)2040CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7 REF. 0.350 (8.89) 0.330 (8.38) 3 7 REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 7 REF. 0.076 (1.93) REF. 45 REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88730 Revision: 25-Apr-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000