? 2N6068 thru 2N6075 ------ SILICON BiE}l SECTIONAL. designed .,. primarily light dimmers, or wherever needed. state fol' full-wave motor full-wave silicon for either polarity negative gate triggering. e All o Small, Rugged, from c)f applied solid-state a blocking thru MAC77-8) such as supplies; devices are to a conducting with positive or M"T2(-)G(-)] Junctions for Greater Construction High He;~t Dissipation *On-State Current RMS (Tc = 85C) and power anocje voltage [~AT2(+)G(+), Therm opadA applications, controls gate controlled Diffused and Passivated formity and Stability Resistance, ac control switch MAC77-I THYRISTQRS con trols, heating Triac type thyristors (Formerly ,,,* for ,*? `~$ t< ..$ {... .i$:,~,..`~~: ~+,.<,.>~ Ther~al `y,:, `~. .Y$' \+,.* \i.,, ma!.,> -,..> \i.~.\\, r, parameter Low and Durability Uni- lT(R~s) *Peak Surge Current (One Full 60 Hz, cycle, (TJ = -40 to-+l 10C, *Peak Gate Power *Average * Peak G Gate Power Tj -40 to~~?~?s~ *~ = "*- t = 1.0 /&$il</hs) $~, `s?,~$ ate Vo Ita$fi:~:,j''''~+< *Operating *Storage T{rnp~$~&re Mount$:~$o$@8e .1 , ,,., TH.~~,@L VGM 5.0 TJ -40to+llo Range Ju ~~#'~$emperature Range -- -40 to +150 (6-32 Screw) CI+ARACTE volts Note 2 += 180 ! ::b_ R lSTICS PIN 1. 2. 3. S)ymb Ol Thermal Resistance, Junction to C.!se 0,015 E Thermal * Indicates NOTES: 1. P-. 2. Resistance, JEDEC Case to Ambient Registered = ~ Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting torque in excess of 6 in. lb. does not appreci2 and heatably lower case-to-sink thermal resistance. Main terminal sink contact pad are common. For soldering ATrademark purposes (either terminal temperatures of M~t~rOla ~ + 0.025 k `% o~ 0.130 Data Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. soldering ~: shall not exceed Inc. connection F F HEAT SINK CONTACT AREA (B OTTOkll CASE 77-02 (5) or device mounting), +2000C. @ MOTOROl-A INC., 1972 ".-------- . ELECTRICAL CHARACTERISTICS (Tc = 25C unless othemise noted) Characteristic *Peak Blocking Rated VDRM Current (Either @ TJ = 110C, *On-State Voltage (Either ITM = 6.0 A Peak (+), MT2(-)G Main Terminal MT2(+)G(+), Current Main Terminal Initiating ITM Max Unit -- 2.0 mA VTM -- 1.4 2.0 ,:*,,tt. -- -- C 60 (+); MT2(-)G(-) MT2(+)G Turn-On Ty p -- Direction) *Gate Trigger Voltage, Peak Main Terminal Voltage = 12 Vdc, Holding Min IDRM Gate Open *Gate Trigger Current, Peak Main Terminal Voltage = 12 Vdc, R L = 100 ohms, TJ = -40 MT2(+)G Symbol Direction) voltage VGTM RL = 100 ohms, TJ = -40C -- (-) =RatedvDRM, RL= 10kohms, TJ = llO C 0.2 MT2(-)G(-) (Either Direction) Voltage = 12 Vdc, Current ,..,$~ ~:c.. `~~. ~ `.~f',,+,: ) \ .:i~, `$\.:ti,*$;-" :h$F>i,, >;::$,,. .+.,,, >'*,.. ",?<.,, _ .++: ~>3, ` 1.5 ,s:,, .,.8*.J,,, ,,+, ,y,.~. ,$*'. . ;% .)'$ ,,,.,., ~.$ ,{> \*, = 1.0 Adc ton = 14 Adc, IGT= 100mAdc dvldt Blocking Voltage Application Rate at Commutation @VDRM, TJ =85C, Gate Open ,+ ,!,,. !;:,,?:.. :!4., ?.i:L.k.$-- --,,.:.>, *1.*~$.+: ,: . -- IH Gate Open, TJ = -40C Time 1.4 , *, * `~,,- $ .,>.., \.$,ft:' " !:&\\J,:.\., ~.,. .. -.,?,;, 5.0 70 mA -- ps -- VIPS -. Temperature (For light dimmer applications See AN-526 for Theory Switches. Coefficient the = 0.02%/C MBS100 and Characteristics Typ is recommended). of Silicon Bidirectional -- ----. ---. z____ FIGURE 701o 1 -AVERAGECURRENT --'. U1--''W'. (''.---I 1.0 IT(AV), FIGURE I AVERAGE ~ 2.0 ON-STATE FIGURE DE I?ATING 2- RMS CURRENT DE RATING 4.0 CUR RENT (AMP) 3 - POW/ER DISSIPATION lT(R~js),, FIGURE 40 6--rYPl -- E m w E ; + ~ < s \ \ TEMPERATURE (OC) GATE-TRIGGER CUR REN"r VTM=12V RL=l OOQ--- -- E OUADFIANT I 20 `\\ -- . \ ~\ 10 ---- --111-- ---- -- 8.0 + -- + -- ,0 ,o~,20 6.0 4.0 -40 TJ, JUNCTION CAL (AMP) -- 30 + 5 g 3 v RMS ON. STATE CURRENT -&40 -20 ,0 0 TJ, JUNCTION TEMPERATURE (OC) t, . , FIG URE7- MAXI MUM ON-STAT -- -- FIG URE8- ECHARACTERISTICS TYPICAL HOLDING CURRENT 40 30 -- -- -- -- -- -- _ _ _ _ _ _ _ - 20 10 // A // 7.0 i ~ ? 5.0 / ~ g _ TJ = 1000c : E 3 v 3.0 ~ + v z 2.0 _ 0 : 1.0 II 0.7 -- -- 0.5 -- -- 0.3 -- ~ Zu 1' v ~ . \ 18 16 U.IL I I I II I ., . 1, 14 1.0 i 4.0 3.0 2.0 7.0 5.0 10 NUMBER OF FULL CYCLES + R = : a +. ~ ; 0.5 I I I I I I Ill I 1 II i I I I I I I I I I I I I I I I II I I I I I I I , I I 0.3 0.2 0.1 0.1 0.2 0.5 1.0 2.0 5,0 20 10 100 50 200 500 l.Ok 2.0 k 5.0 k 10k t, TIME (ins) BOX -@ &9&l PRINTED IN USA 3-72 Produces Semiconductor MOTOROLA IMPERIAL 20912 LITHO 0 828047 PHOENIX. 4M, ARIZONA 85036 * A 5U651 DIARY OF MOTOROLA Inc. -- INC. .s 854,