?
SILICON BiE}l SECTIONAL. THYRISTQRS
.,. designed primarily fol’ full-wave ac control applications, such as
light dimmers, motor con trols, heating controls and power supplies;
or wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from ablocking to aconducting
state for either polarity c)f applied anocje voltage with positive or
negative gate triggering. [~AT2(+)G(+), M“T2(-)G(-)]
eAll Diffused and Passivated Junctions for Greater parameter Uni- ,*?‘~$
formity and Stability t<
..$ {...
.i$:,~,..‘~~:
oSmall, Rugged, Therm opadA Construction for Low Ther~al ‘y,:,
~+,.<,.>~
Resistance, High He;~t Dissipation and Durability .Y$’ ‘~.
\+,.*\i.,,
ma!.,>
-,..>\i.~.\\, r,
*On-State Current RMS (Tc =85°C)
*~
,,,* lT(R~s)
*Peak Surge Current
(One Full cycle, 60 Hz, Tj =-40 to~~?~?s~
“*-
(TJ =-40 to-+l 10°C, t=1.0 /&$il</hs)
*Peak Gate Power
*Average Gate Power $~, ‘s?,~$
*Peak Gate Vo Ita$fi:~:,j’’’’~+< VGM 5.0 volts
*Operating Ju ~~#’~$emperature Range TJ -40to+llo —
*Storage T{rnp~$~&re Range
+= 180 !::b_
-40 to +150
Mount$:~$o$@8e (6-32 Screw) Note 2
.1 ,,,.,
TH.~~,@L CI+ARACTE RlSTICS
E= ~ ~: ~
S)ymb Ol
Thermal Resistance, Junction to C.!se
Thermal Resistance, Case to Ambient
*Indicates JEDEC Registered Data
NOTES:
1. Ratings apply for open gate conditions. Thyristor devices shall not be
tested with aconstant current source for blocking capability such that
P-. the voltage applied exceeds the rated blocking voltage.
2. Torque rating applies with use of torque washer (Shakeproof WD19523
or equivalent). Mounting torque in excess of 6in. lb. does not appreci-
ably lower case-to-sink thermal resistance. Main terminal 2and heat-
sink contact pad are common.
For soldering purposes (either terminal connection or device mounting),
soldering temperatures shall not exceed +2000C.
ATrademark of M~t~rOla Inc.
2N6068
thru
2N6075
(Formerly MAC77-I thru MAC77-8)
———
PIN 1.
2.
3. k
0,015 +‘%
0.025
F F
HEAT SINK
CONTACT AREA
(BOTTOkll
CASE 77-02 (5)
o~
0.130
@MOTOROl-A INC., 1972
ELECTRICAL CHARACTERISTICS (Tc =25°C unless othemise noted)
Characteristic Symbol Min Ty pMax Unit
*Peak Blocking Current (Either Direction) IDRM — — 2.0 mA
Rated VDRM @TJ =110°C, Gate Open
*On-State Voltage (Either Direction) VTM —1.4 2.0
ITM =6.0 APeak ,:*,,tt.
*Gate Trigger Current, Peak
Main Terminal Voltage =12 Vdc, RL=100 ohms, TJ =-40° C——60
MT2(+)G (+); MT2(-)G(-)
*Gate Trigger Voltage, Peak VGTM
Main Terminal Voltage =12 Vdc, RL =100 ohms, TJ =-40°C
MT2(+)G (+), MT2(-)G (-) —1.4
Main Terminal voltage =RatedvDRM, RL= 10kohms, TJ =llO° C
,+
,!,
0.2 !;:,,?:..,.
MT2(+)G(+), MT2(-)G(-) :!4.,?.i:L.k.$—
—,,.:.>,
*1.*~$.+:,: .
Holding Current (Either Direction) IH —,..,$~~:c.. ‘~~.~
‘.~f’,,+,:)\70 mA
Main Terminal Voltage =12 Vdc, Gate Open, TJ =-40°C .:i~,‘$\.:ti,*$;-”
:h$F>i,,>;::$,,.
Initiating Current =1.0 Adc .+.,,, >’*,..
“,?<.,,
Turn-On Time ton _.++:~>3, ‘1.5 —
,s:,,
.,.8*.,,+,ps
ITM =14 Adc, IGT= 100mAdc ,y,.~. J,,,
,$*’...)’$*,
,,,.,.,~.$,{>;% \
Blocking Voltage Application Rate at Commutation dvldt *‘~,,– $5.0 —VIPS
@VDRM, TJ =85°C, Gate Open .,>.., \.$,ft:’“
!:&\\J,:.\.,
~.,..
..
,*, -.,?,;,
Temperature Coefficient =0.02%/°C Typ
(For light dimmer applications the MBS100 is recommended).
See AN-526 for Theory and Characteristics of Silicon Bidirectional
Switches.
.
-.
—
“.——--— ——. -—. z____
FIGURE 1–AVERAGECURRENT DE I?ATING
701- --’. U1--’’W’. (’’.---I I~
o1.0 2.0 4.0
IT(AV), AVERAGE ON-STATE CUR RENT (AMP)
FIGURE 3 – POW/ER DISSIPATION
TJ, JUNCTION TEMPERATURE (OC)
FIGURE 2– RMS CURRENT DE RATING
lT(R~js),, RMS ON. STATE CURRENT (AMP)
FIGURE 6–-rYPl CAL GATE-TRIGGER CUR REN”r
40 —
30 \E
VTM=12V
—RL=l OOQ–—
+—
5\OUADFIANT I
g 20
3
v‘\\
E—.
m
w\
E~\
;10
+
~8.0 —— —111— +—+—
<—— —
s6.0
4.0 -&40 ,0,0 ,o~,20
-40 -20 0
TJ, JUNCTION TEMPERATURE (OC)
FIG URE7– MAXI MUM ON-STAT ECHARACTERISTICS FIG URE8– TYPICAL HOLDING CURRENT
40
30 —— — — — — — —
20
10 A
//
//
7.0 i
~5.0 ?
~/__ _ _ _
gTJ =1000c
:3.0
E
3
v
~2.0
+
v
z_ _ _ _ –
0
:
1.0 II
0.7 ——
0.5 ——
0.3 —
U.IL I I II I I 1, ., . i
~Zu 1’
v
~18 \
.16
141.0 2.0 3.0 4.0 5.0 7.0 10
NUMBEROF FULL CYCLES
+
R0.5 II I II I Ill I I ,
1IiII I I I I I I I I I I I I I II I I I I I I I
=I
:0.3 I
a
+. 0.2
~
;0.1
0.1 0.2 0.5 1.0 2.0 5,0 10 20 50 100 200 500 l.Ok 2.0 k5.0 k10k
t, TIME (ins)
-@ MOTOROLA Semiconductor Produces Inc. —
BOX 20912 0 PHOENIX. ARIZONA 85036 *A5U651 DIARY OF MOTOROLA INC.
&9&l PRINTED IN USA 3-72 IMPERIAL LITHO 828047 4M, .s 854,
t, .
,
