Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ 100% Avalanche Test BVDSS 600V
▼ Fast Switching Characteristic RDS(ON) 10Ω
▼ Simple Drive Requirement ID0.35A
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TA=25℃Continuous Drain Current, VGS @ 10V4A
IDM Pulsed Drain Current1A
PD@TA=25℃Total Power Dissipation W
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient445 ℃/W
Data & specifications subject to change without notice
Parameter
APA2N70K
RoHS-compliant Product
Rating
0.5
600
201201163
1.4
2.7
+30
0.35
-55 to 150
Parameter
1
1
Storage Temperature Range -55 to 150
G
D
S
D
DS
G
SOT-223
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching,low on-resistance and cost-effectiveness.
The SOT-223 package is designed for suface mount application, large
r
heatsink than SO-8 package.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V
RDS(ON) Static Drain-Source On-Resistance3VGS=10V, ID=0.35A - - 10 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=0.2A - 0.4 - S
IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=70oC) VDS=480V, VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA
QgTotal Gate Charge3ID=0.2A - 5.5 - nC
Qgs Gate-Source Charge VDS=540V - 1.9 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.5 - nC
td(on) Turn-on Delay Time3VDS=300V - 7.7 - ns
trRise Time ID=0.2A - 3.6 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 24 - ns
tfFall Time RD=1500Ω-44-ns
Ciss Input Capacitance VGS=0V - 286 - pF
Coss Output Capacitance VDS=25V - 25 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3Tj=25℃, IS=0.2A, VGS=0V - - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=1A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
APA2N70K
2
4.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
APA2N70
K
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
3
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normal ized B VDSS (V)
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normal ized RDS(ON)
I
D=0.2A
VGS =10V
0
0.25
0.5
0.75
1
036912
VDS , Drain-to-Source Voltage (V)
ID , Drain Curre nt (A)
TA=25oC 10V
5.5V
5.0V
4.5V
VGS =4.0V
0
0.2
0.4
0.6
0.8
0 6 12 18 24
VDS , Drain-to-Source Voltage (V)
ID , Drain Curre nt (A)
TA=150 oC 10V
5.0V
4.5V
VGS =4.0V
APA2N70
K
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
4
0
0.06
0.12
0.18
0.24
25 50 75 100 125 150
Tc , Case Temperature ( oC )
ID , Drain Curre nt (A)
0
0.4
0.8
1.2
1.6
0 50 100 150
Tc, Case Temperature ( oC )
PD (W)
0.001
0.01
0.1
1
10
0.1 1 10 100 1000 10000
VDS (V)
ID (A)
TA=25oC
Single Pulse
1ms
10ms
100ms
1S
D
C
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja+ Ta
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor=0.5
Single Pulse
Rthja = 120℃/W
Operation in this
area limited by
RDS(ON)
APA2N70
K
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
5
2
2.5
3
3.5
4
-50 0 50 100 150
Tj , Junction Temperature ( o C )
VGS(th) (V)
1
10
100
1000
1101928
VDS (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0.001
0.01
0.1
1
0 0.3 0.6 0.9 1.2
VSD (V)
IS (A)
Tj = 150 oCT
j = 25 oC
0
4
8
12
16
02468
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
I
D=0.2A
VDS =540V
APA2N70
K
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
6
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0.44 x RATED
TO THE
OSCILLOSCOPE
-
+10 V
D
G
S
VDS
VGS
RG
RD
0.8 x RATED VDS
TO THE
OSCILLOSCOPE
-
+
D
G
S
VDS
VGS
ID
IG
1~ 3 m