4N22U 4N23U 4N24U 6 PIN LCC OPTOCOUPLERS MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 05/29/03 Features: * MIL-PRF-19500/486 Qualified * Base lead provided for conventional transistor biasing * High gain, high voltage transistor * Miniature package saves circuit board area * High voltage electrical isolation...1KV rating Applications: * * * * * Line Receivers Switchmode Power Supplies Signal ground isolation Process Control input/output isolation Motor control DESCRIPTION High gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor in a 6-pin leadless chip carrier. The 4N22U, 4N23U and 4N24U optocouplers can be supplied to customer specifications as well as JAN, JANS, JANTX, and JANTXV quality levels. *ABSOLUTE MAXIMUM RATINGS Input to Output Voltage .................................................................................................................................................... 1000V Collector-Base Voltage ...........................................................................................................................................................35V Collector-Emitter Voltage........................................................................................................................................................35V Emitter-Collector Voltage..........................................................................................................................................................4V Input Diode Reverse Voltage....................................................................................................................................................2V Input Diode Continuous Forward Current at (or below) 65C Free-Air Temperature (see note 1) ....................................40mA Continuous Collector Current ..............................................................................................................................................50mA Peak Diode Current ..................................................................................................................................................................1A Continuous Transistor Power Dissipation at (or below) 25C Free-Air Temperature (see Note 2) ................................300mW Operating Free-Air Temperature Range.............................................................................................................-55C to +125C Storage Temperature..........................................................................................................................................-65C to +125C Solder Temperature (10 seconds)...................................................................................................................................... 240C Notes: 1. Derate linearly to 125C free-air temperature at the rate of 0.67 mA/C above 65C. 2. Derate linearly to 125C free-air temperature at the rate of 3 mW/C above 65C. * JEDEC registered data Package Dimensions Schematic Diagram 0.250 [6.35] 0.240 [6.10] PIN 1 IDENTIFIER 0.080 [2.03] 0.066 [1.68] 1 A C 0.175 [4.45] 0.165 [4.19] E 0.028 [0.71] 0.022 [0.56] 0.098 [2.49] 0.082 [2.08] 3 2 1 6 0.105 [2.67] 0.095 [2.41] 3 4 5 6 K B 0.055 [1.40] 0.045 [1.14] 0.070 [1.78] 5 PLS 0.060 [1.52] ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION * 725 E.Walnut St., Garland, TX 75040 * (972)272-3571 * Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM 5 4 4N22U, 4N23U, and 4N24U 6 PIN LCC OPTOCOUPLERS 05/29/03 ELECTRICAL CHARACTERISTICS INPUT LED TA = 25C Unless otherwise specified PARAMETER SYMBOL Input Diode Static Reverse Current Input Diode Static Forward Voltage -55 C +25 C +100 C MIN IR MAX UNITS TEST CONDITIONS 100 A VR = 2V VF 1.0 0.8 0.7 1.5 1.3 1.2 V IF = 10mA MAX NOTE OUTPUT TRANSISTOR TA = 25C Unless otherwise specified SYMBOL MIN UNITS TEST CONDITIONS Collector-Base Breakdown Voltage PARAMETER V(BR)CBO 35 V IC = 100A, IB = 0, IF = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 35 V IC = 1mA, IB = 0, IF = 0 Emitter-Base Breakdown Voltage V(BR)EBO 4 V IC= 0, IE = 100A, IF = 0 NOTE COUPLED CHARACTERISTICS TA = 25C Unless otherwise specified PARAMETER SYMBOL MIN UNITS TEST CONDITIONS 4N22U 4N23U 4N24U mA VCE = 5V, IB = 0, IF = 2mA IC(ON) 0.15 0.2 0.4 4N22U 4N23U 4N24U 2.5 6.0 10.0 mA IC(ON) On State Collector Current -55C 4N22U 4N23U 4N24U 1.0 2.5 4.0 mA IC(ON) On State Collector Current +100C 4N22U 4N23U 4N24U 1.0 2.5 4.0 mA IC(ON) On State Collector Current On State Collector Current MAX VCE = 5V, IB = 0, IF = 10mA VCE = 5V, IB = 0, IF = 10mA VCE = 5V, IB = 0, IF = 10mA +25C IC(OFF) 100 nA Off State Collector Current +100C IC(OFF) 100 A VCE = 20V, IB = 0, IF = 0mA VCE(SAT) VCE(SAT) VCE(SAT) 0.3 0.3 0.3 V V V IC = 2.5mA, IB = 0, IF = 20mA IC = 5mA, IB = 0, IF = 20mA IC = 10mA, IB = 0, IF = 20mA Off State Collector Current Collector-Emitter Saturation Voltage 4N22U 4N23U 4N24U NOTE 11 VCE = 20V, IB = 0, IF = 0mA Input to Output Resistance ALL RI-O VIN-OUT = 1kV 1 Input to Output Capacitance ALL CI-O 5 pF f = 1MHz, VIN-OUT = 1kV 1 4N22U 4N23U 4N24U tr tr tr 15 15 20 s 4N22U 4N23U 4N24U tf tf tf 15 15 20 Rise Time Fall Time 10 s VCC = 10V, IF = 10mA, RL = 100 s s s VCC = 10V, IF = 10mA, RL = 100 s NOTE: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. SELECTION GUIDE PART NUMBER 4N22U 4N23U 4N24U JAN4N22U JAN4N23U JAN4N24U JANTX4N22U JANTX4N23U JANTX4N24U JANTXV4N22U JANTXV4N23 JANTXV4N24U JANS4N22U JANS4N23U JANS4N24U PART DESCRIPTION Commercial Commercial Commercial JAN Screened JAN Screened JAN Screened JANTX Screened JANTX Screened JANTX Screened JANTXV Screened JANTXV Screened JANTXV Screened JANS Screened JANS Screened JANS Screened MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION * 725 E.Walnut St., Garland, TX 75040 * (972)272-3571 * Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM