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Features
•Operating Voltage: 3.3V, 5V tolerant
•Access Time:
– 17 ns
– 15 ns
•Very Low Power Consumption
– Active: 610 mW (Max) @ 17 ns(1), 540 mW (Max) @ 25 ns
– Standby: 3.3 mW (Typ)
•Wide Temperature Range: -55 to +125°C
•TTL-Compatible Inputs and Outputs
•Asynchronous
•Designed on 0.25 µm Radiation Hardened Process
•No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2@125°C
•Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
•500 Mils Wide FP36 Package
•ESD Better than 2000V
•Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208
Note: 1. 650 mW (Max) @ 15 ns
Description
The AT60142FT is a very low power CMOS static RAM organized as 512K x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142FT combines an
extremely low standby supply current (Typical value = 1 mA) with a fast access time at
15 ns over the full military temperature range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
The AT60142FT is processed according to the methods of the latest revision of the
MIL PRF 38535 or ESCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
Rad Hard
512K x 8
5V Tolerant
Very Low Power
CMOS SRAM
AT60142FT
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AT60142FT
7726C–AERO–05/10
Block Diagram
Pin Configuration
A0
A1
A2
A3
A4
CS
I/O1
I/O2
Vcc
GND
I/O3
I/O4
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A18
A17
A16
A15
OE
I/O8
I/O7
GND
Vcc
I/O6
I/O5
A14
A13
A12
A11
A10
N/C
36 - pin -Flatpack - 500 Mils
3AT60142FT
7726C–AERO–05/10
Pin Description Table 1. Pin Names
Table 2. Truth Table(1)
Name Description
A0 - A18 Address Inputs
I/O1 - I/O8 Data Input/Output
CS Chip Select
WEWrite Enable
OE Output Enable
Vcc Power Supply
GND Ground
CS WEOE Inputs/Outputs Mode
HXX Z Deselect/
Power-down
L H L Data Out Read
L L X Data In Write
L H H Z Output Disable
Note: 1. L=low, H=high, X= L or H, Z=high impedance.
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AT60142FT
7726C–AERO–05/10
Electrical Characteristics
Absolute Maximum Ratings*
Military Operating Range
Recommended DC Operating Conditions
Note: 1. 5.8V in transient conditions.
Capacitance
Note: 1. Guaranteed but not tested.
Supply Voltage to GND Potential: ....................... -0.5V + 4.6V
Voltage range on any input: ...................... GND -0.5V to 7.0V
Voltage range on any ouput: ..................... GND -0.5V to 7.0V
Storage Temperature: ................................. -65°C to + 150°C
Output Current from Output Pins: ................................ 20 mA
Electro Statics Discharge Voltage: ............................ > 2000V
(MIL STD 883D Method 3015.3)
*NOTE: Stresses beyond those listed under "Abso-
lute Maximum Ratings” may cause perma-
nent damage to the device. This is a stress
rating only and functional operation of the
device at these or any other conditions
beyond those indicated in the operational
sections of this specification is not implied.
Exposure between recommended DC
operating and absolute maximum rating
conditions for extended periods may
affect device reliability.
Operating Voltage Operating Temperature
Military 3.3 + 0.3V -55°C to + 125°C
Parameter Description Min Typ Max Unit
Vcc Supply voltage 3 3.3 3.6 V
GND Ground 0.0 0.0 0.0 V
VIL Input low voltage GND - 0.3 0.0 0.8 V
VIH Input high voltage 2.2 – 5.5(1) V
Parameter Description Min Typ Max Unit
Cin(1) Input capacitance – – 12 pF
Cout(1) Output capacitance – – 12 pF
5AT60142FT
7726C–AERO–05/10
DC Parameters
Consumption
Parameter Description Minimum Typical Maximum Unit
IIX (1)
1. GND < VIN < VCC, GND < VOUT < VCC Output Disabled.
2. VIN = 5.5V, VOUT = 5.5V, Output Disabled.
3. VCC min. IOL = 6 mA
4. VCC min. IOH = -4 mA.
Input leakage current -1 – 1 μA
IOZ(1) Output leakage
current -1 – 1 μA
IIH(2) at 5.5V Input Leakage
Current ––2μA
IOZH(2) at 5.5V Output Leakage
Current ––1.5μA
VOL(3) Output low voltage – – 0.4 V
VOH(4) Output high voltage 2.4 – – V
Symbol Description
TAVAV/TAVAW
Test Condition AT60142FT-17 AT60142FT-15 Unit Value
ICCSB (1)
1. CS >VIH
Standby Supply
Current – 2 2.5 mA max
ICCSB1 (2)
2. CS > VCC - 0.3V
3. F = 1/TAVAV, Iout = 0 mA, WE = OE = VIH, VIN = GND/VCC, VCC max.
4. F = 1/TAVAW, Iout = 0 mA, WE = VIL, OE = VIH , VIN = GND/VCC, VCC max.
Standby Supply
Current –1.82mAmax
ICCOP(3) Read
Dynamic
Operating
Current
15 ns
17 ns
25 ns
50 ns
1 µs
-
170
150
75
10
180
170
150
75
10
mA max
ICCOP(4) Write
Dynamic
Operating
Current
15 ns
17 ns
25 ns
50 ns
1 µs
-
145
130
120
100
150
145
130
120
100
mA max
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AT60142FT
7726C–AERO–05/10
Data Retention Mode Atmel CMOS RAM's are designed with battery backup in mind. Data retention voltage
and supply current are guaranteed over temperature. The following rules insure data
retention:
1. During data retention chip select CS must be held high within VCC to VCC -0.2V.
2. Output Enable (OE) should be held high to keep the RAM outputs high imped-
ance, minimizing power dissipation.
3. During power-up and power-down transitions CS and OE must be kept between
VCC + 0.3V and 70% of VCC.
4. The RAM can begin operation > tR ns after VCC reaches the minimum operation
voltages (3V).
Figure 1. Data Retention Timing
Data Retention Characteristics
Parameter Description Min Typ TA = 25°CMax Unit
VCCDR VCC for data retention 2.0 – – V
tCDR
Chip deselect to data
retention time 0.0 – – ns
tR
Operation recovery
time tAVAV (1)
1. TAVAV = Read cycle time.
––ns
ICCDR (2)
2. CS = VCC, VIN = GND/VCC.
Data retention current – 0.700
1.5 (AT60142FT-15)
mA
1.3 (AT60142FT-17)
7AT60142FT
7726C–AERO–05/10
AC Characteristics
Temperature Range:................................................ -55 +125°C
Supply Voltage:........................................................ 3.3 +0.3V
Input Pulse Levels: .................................................. GND to 3.0V
Input Rise and Fall Times:....................................... 3ns (10 - 90%)
Input and Output Timing Reference Levels: ............ 1.5V
Output Loading IOL/IOH:............................................ See Figure 2
Figure 2. AC Test Loads Waveforms
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AT60142FT
7726C–AERO–05/10
Write Cycle
Notes: 1. Parameters guaranteed, not tested, with output loading 5 pF. (See “AC Test Loads Waveforms” on page 7.)
Figure 3. Write Cycle 1. WE Controlled, OE High During Write
Figure 4. Write Cycle 2. WE Controlled, OE Low
Symbol Parameter AT60142FT-17 AT60142FT-15 Unit Value
TAVAW Write cycle time 17 15 ns min
TAVWL Address set-up time 0 0 ns min
TAVWH Address valid to end of write 8 8 ns min
TDVWH Data set-up time 7 7 ns min
TELWH CS low to write end 12 10 ns min
TWLQZ Write low to high Z(1) 76nsmax
TWLWH Write pulse width 8 8 ns min
TWHAX Address hold from end of write 0 0 ns min
TWHDX Data hold time 0 0 ns min
TWHQX Write high to low Z(1) 33nsmin
E
E
9AT60142FT
7726C–AERO–05/10
Figure 5. Write Cycle 3. CS Controlled
Note: The internal write time of the memory is defined by the overlap of CS Low and W LOW. Both signals must be activated to initiate
a write and either signal can terminate a write by going in active mode. The data input setup and hold timing should be refer-
enced to the active edge of the signal that terminates the write.
Data out is high impedance if OE= VIH.
E
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AT60142FT
7726C–AERO–05/10
Read Cycle
Note: 1. Parameters guaranteed, not tested, with output loading 5 pF. (See “AC Test Loads Waveforms” on page 7.)
Figure 6. Read Cycle nb 1: Address Controlled (CS = OE = VIL, WE = VIH)
Figure 7. Read Cycle nb 2: Chip Select Controlled (WE = VIH)
Symbol Parameter AT60142FT-17 AT60142FT-15 Unit Value
TAVAV Read cycle time 17 15 ns min
TAVQV Address access time 17 15 ns max
TAVQX Address valid to low Z 5 5 ns min
TELQV Chip-select access time 17 15 ns max
TELQX CS low to low Z(1) 55nsmin
TEHQZ CS high to high Z(1) 76nsmax
TGLQV Output Enable access time 8 6 ns max
TGLQX OE low to low Z(1) 22nsmin
TGHQZ OE high to high Z (1) 65nsmax
11 AT60142FT
7726C–AERO–05/10
Ordering Information
Note: 1. Contact Atmel for availability.
2. Will be replaced by SMD part number when available.
3. Will be replaced by ESCC part number when available.
Part Number Temperature Range Speed Package Flow
AT60142FT-DS17M-E 25°C 17 ns/5V tol. FP36.5 grounded lid Engineering Samples
5962-0520801QYC -55° to +125°C 17 ns/5V tol. FP36.5 grounded lid QML Q
5962-0520801VYC -55° to +125°C 17 ns/5V tol. FP36.5 grounded lid QML V
5962R0520801VYC -55° to +125°C 17 ns/5V tol. FP36.5 grounded lid QML V RHA
AT60142FT-DS17ESCC(3) -55° to +125°C 17 ns/5V tol. FP36.5 grounded lid ESCC
AT60142FT-DD17M-E(1) 25°C 17 ns/5V tol. Die Engineering Samples
AT60142FT-DD17MSV(1) (2) -55° to +125°C 17 ns/5V tol. Die QML V
AT60142FT-DS15M-E(1) 25°C 15 ns/5V tol. FP36.5 grounded lid Engineering Samples
AT60142FT-DS15MMQ(1) (2) -55° to +125°C 15 ns/5V tol. FP36.5 grounded lid QML Q
AT60142FT-DS15MSV(1) (2) -55° to +125°C 15 ns/5V tol. FP36.5 grounded lid QML V
AT60142FT-DS15MSR(1) (2) -55° to +125°C 15 ns/5V tol. FP36.5 grounded lid QML V RHA
AT60142FT-DS15ESCC(3) -55° to +125°C 15 ns/5V tol. FP36.5 grounded lid ESCC
AT60142FT-DD15M-E(1) 25°C 15 ns/5V tol. Die Engineering Samples
AT60142FT-DS15MSV -55° to +125°C 15 ns/5V tol. Die QML V
Not recommended for new designs
5962-0520801QXC -55⋅ to +125⋅C17 ns/5V tol. FP36.5 QML Q
5962-0520801VXC -55⋅ to +125⋅C17 ns/5V tol. FP36.5 QML V
5962R0520801VXC -55⋅ to +125⋅C17 ns/5V tol. FP36.5 QML V RHA
930105201 -55⋅ to +125⋅C17 ns/5V tol. FP36.5 ESCC
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AT60142FT
7726C–AERO–05/10
Package Drawings
36-lead Flat Pack (500 Mils)
Notes: 1. package DC : lid is NOT connected to GROUND
2. package DS : lid is connected to GROUND
13 AT60142FT
7726C–AERO–05/10
Document Revision History
Changes from Rev. A to Rev. B
1. Update of “Absolute Maximum Ratings” section
Changes from Rev. B to Rev. C
1. In “Features” section page 1 :
–“
MeV/mg/cm2” unit replaced by “MeV/mg/cm2@125°C”
2. In “Absolute Maximum Ratings” section page 4 :
– 4.6V replaced by 7.0V on “Voltage range on any input” parameter
3. In “AC Characteristics” section page 7 :
– “See figure 1” replaced by “See figure 2”
4. In “Ordering Information” section page 11 :
– All parts supplied in FP3.5 without grounded lid are not recommended for
new designs
Printed on recycled paper.
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