HL6319G/20G
AlGaInP Laser Diodes
ODE-208-479E (Z)
Rev.5
Jan. 2003
Description
The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure.
They are suitable as light sources for laser levelers and optical equipment for measurement.
Application
• Laser levelers
• Measurement
Features
• Visible light output: 635 nm Typ (nearly equal to He-Ne gas laser)
• Single longitudinal mode
• Optical output power: 10 mW CW
• Low operating current: 95 mA Max
• Low operating voltage: 2.7 V Max
• TM mode oscillation
LD LDPD PD
1 1
3 3
2
Internal Circuit
• HL6319G
Internal Circuit
• HL6320G
Package Type
• HL6319G/20G: G2
2
HL6319G/20G
Rev.5, Jan. 2003, page 2 of 7
Absolute Maximum Ratings
(TC = 25°C)
Item Symbol Rated Value Unit
Optical output power PO10 mW
LD reverse voltage VR(LD) 2V
PD reverse voltage VR(PD) 30 V
Operating temperature Topr –10 to +50 °C
Storage temperature Tstg –40 to +85 °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Optical output power PO10——mW —
Threshold current Ith 20 50 75 mA —
Operating current IOP —7095mA P
O = 10 mW
Operating voltage VOP ——2.7V P
O = 10 mW
Slope efficiency ηs 0.3 0.5 0.7 mW/mA 6 (mW) / (I(8mW) – I(2mW))
Beam divergence
parallel to the junction
θ// 5 8 11 deg. PO = 10 mW
Beam divergence
parpendicular to the junction
θ⊥ 25 31 37 deg. PO = 10 mW
Astigmatism AS—5 —µmP
O = 10 mW, NA = 0.55
Lasing wavelength λp 625 635 640 nm PO = 10 mW
Monitor current IS0.05 0.17 0.30 mA PO = 10 mW, VR(PD) = 5 V
HL6319G/20G
Rev.5, Jan. 2003, page 3 of 7
Typical Characteristic Curves
Optical output power, P
O
(mW)
10
8
6
4
2
00100 200
Foward current, I
F
(mA)
50°C
25°C
Optical Output Power vs. Foward Current
Optical output power, P
O
(mW)
Monitor current, I
S
(m
A
)
0.20
0.15
0.10
0.05
0 246810
V
R(PD)
= 5 V
T
C
= 25°C
Monitor Current vs. Optical Output Power
TC = −10°C
0.2
0.4
0.6
0.8
1.0
−40 −20 0 20 40
Angle, θ (deg.)
Relative intensity
0
Parallel
Perpendicular
Far Field Pattern
P
O
= 10 mW
T
C
= 25°C
−30 −10 10 30
Lasing Spectrum
Wavelength, λp (nm)
625 630 635 640 645 650
Relative intensity
T
C
= 25°C
P
O
= 10 mW
P
O
= 1 mW
P
O
= 5 mW
HL6319G/20G
Rev.5, Jan. 2003, page 4 of 7
Typical Characteristic Curves (cont)
Case temperature, T
C
(°C) Case temperature, T
C
(°C)
−10 0 10 20 30 40
200
100
20
Threshould current, Ith (mA)
Threshold Current vs. Case Temperature
50
50
Slope Efficiency vs. Case Temperature
−10 0 4010 20 30 50
Slope efficiency, ηs (mW/mA)
0
0.2
0.4
0.6
0.8
1.0
Monitor Current vs. Case Temperature
Case temperature, T
C
(°C)
−10 010
20 30 40
Monitor current, I
S
(mA)
0
0.1
0.2
0.3
0.4
50
Lasing Wavelength vs. Case Temperature
01020304050
Lasing wavelength, λp (nm)
630
635
645
650
640
−10
Case temperature, T
C
(°C)
P
O
= 10 mW
P
O
= 10 mW
V
R(PD)
= 5 V
HL6319G/20G
Rev.5, Jan. 2003, page 5 of 7
Typical Characteristic Curves (cont)
8
6
4
2
002 6
4810
Optical output power, P
O
(mW)
Astigmastism, A
S
(µm)
Astigmastism vs. Optical Output Power
10 T
C
= 25°C
NA = 0.55
Polarization Ratio vs. Optical Output Power
Optical output power, P
O
(mW)
0246810
Polarization ratio
0
200
400
600
800 T
C
= 25°C
NA = 0.4
100
80
60
40
20
0
Survival rate (%)
Applied voltage (kV)
Electrostatic Destruction (Reverse)
023
1
Reverse(ANSI method)
N = 5 pcs
judgment : ∆I
O
≤ 10%
0 500 1000
100
80
60
Survival rate (%)
40
20
0
Applied voltage (V)
Electrostatic Destruction (Forward)
Forward(ANSI method)
N = 5 pcs
judgment : ∆I
O
≤ 10%
HL6319G/20G
Rev.5, Jan. 2003, page 6 of 7
Package Dimensions
OPJ Code
JEDEC
JEITA
Mass
(reference value)
LD/G2
—
—
1.1 g
123
1
2
3
9.0
+0
–0.025
φ
1.0 ± 0.1
0.4
+0.1
–0
(0.65)
(90˚)
φ
7.2
+0.3
–0.2
φ
φ6.2 ± 0.2
( 2.0)
φ
Emitting Point
2.45
1.5 ± 0.1
9 ± 1
3 – 0.45 ± 0.1
3.5 ± 0.2
0.3
Glass
φ2.54 ± 0.35
As of July, 2002
Unit: mm
HL6319G/20G
Rev.5, Jan. 2003, page 7 of 7
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s
patent, copyright, trademark, or other intellectual property rights for information contained in this
document. OPJ bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However,
contact our sales office before using the product in an application that demands especially high quality
and reliability or where its failure or malfunction may directly threaten human life or cause risk of
bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic,
safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions
and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the
guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or
failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the
equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage
due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The
laser beam shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very
low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or
performing chemical experiments, when you handle the product.
When disposing of the product, please follow the laws of your country and separate it from other waste
such as industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook
issued by OPJ unless otherwise specified.
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