FQP13N10J69Z - Fairchild Semiconductor Corporation

May 2000

Rev. A, May 2000

FQP13N10

QFET

QFETQFET

QFETTM

FQP13N10

100V N-Ch annel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

Features

• 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 20 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQP13N10 Units

VDSS Drain-Source Voltage 100 V

IDDrain Current - Continuous (TC = 25°C) 12.8 A

- Continuous (TC = 100°C) 9.05 A

IDM Drain Current - Pulsed (Note 1) 51.2 A

VGSS Gate-Source Voltage ± 25 V

EAS Single Pulsed Avalanche Energy (Note 2) 95 mJ

IAR Avalanche Current (Note 1) 12.8 A

EAR Repetitive Avalanche Energy (Note 1) 6.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

PDPower Dissipation (TC = 25°C) 65 W

- Derate above 25°C 0.43 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 2.31 °C/W

RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

D TO-220

FQP Series

FQP13N10

(Note 4)

(Note 4, 5)

(Note 4)

Rev. A, May 2000

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.87mH, IAS = 12.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤12.8 A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit i ons Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA100 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.09 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µA

VDS = 80 V, TC = 150°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 6.4 A -- 0.142 0.18 Ω

gFS Forward Transconduct ance VDS = 40 V, ID = 6.4 A -- 6.8 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 345 450 pF

Coss Output Capacitance -- 100 130 pF

Crss Reverse Transfer Capacitance -- 20 25 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 50 V, ID = 12.8 A,

RG = 25 Ω

-- 5 20 ns

trTurn-On Rise Time -- 55 120 ns

td(off) Turn-Off D e l a y Time -- 20 50 ns

tfTurn-Off F all Time -- 25 60 ns

QgTotal Gate Ch arge VDS = 80 V, ID = 12.8 A,

VGS = 10 V

-- 12 16 nC

Qgs Gate-Source Charge -- 2.5 -- nC

Qgd Gate-Drain Charge -- 5.1 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 12.8 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 51.2 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12.8 A -- -- 1.5 V

trr Reverse Recovery Time VGS = 0 V, I S = 12.8 A,

dIF / dt = 100 A/µs

-- 72 -- ns

Qrr Reverse Recovery Charge -- 0.17 -- µC

FQP13N10

Rev. A, May 2000

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

10-1

100

101

175℃

※ Notes :

1. VGS = 0V

2. 250μ

s Pulse Test

25℃

IDR, Reverse Drain Current [A]

VSD, So u r c e - Dra i n volta g e [V ]

246810

10-1

100

101

※ No tes :

1 . VDS = 40V

2. 250μ

s Pu lse T est

-55℃

175℃

25℃

ID , Drain Current [A ]

VGS , Gate-Source Voltage [V]

0 10203040

0.0

0.2

0.4

0.6

0.8

VGS = 20V

VGS = 10V

※ N ote : T J = 25℃

RDS(ON) [Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

10-1 100101

10-1

100

101

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

※ Notes :

1. 250μ

s Pulse Test

2. TC = 25℃

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

024681012

VDS = 50V

VDS = 80V

※ Note : ID = 12.8A

VGS, Gate-Source Voltage [V]

QG, T ota l Ga te Cha rg e [nC]

10-1 100101

150

300

450

600

750

900 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

※ Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. C apacitanc e Ch aracterist i cs Figure 6. Ga te Ch arge Cha ra ct eri stics

Figu re 3. On-Resi stan ce Vari ation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character i st ic s

FQP13N10

Rev. A, May 2000

25 50 75 100 125 150 175

ID, Drain Current [A]

TC, Case Temperature [℃

]

100101102

10-1

100

101

102

10 m s 1 ms

100 µs

Op era tion in Th is A r e a

is Limited by R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 175 oC

3. Single Pulse

ID, D rain C urrent [A]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. VGS = 10 V

2. ID = 6.4 A

RDS(ON) , (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1 . VGS = 0 V

2 . ID = 250 μ

BV DSS , (N ormaliz e d )

Drain-Source Breakdow n Voltage

TJ, Junction Tem perature [oC]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

※ No te s :

1 . ZθJC(t) = 2.31 ℃/W Max .

2 . D u ty F a c to r, D = t1/t2

3 . TJM - T C = PDM * Z θJC(t)

single p ulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), T herm al R esponse

t1, S quare W ave Pulse D uration [sec]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Breakdown Voltage Variat i on

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Res pons e Cur ve

PDM

FQP13N10

Rev. A, May 2000

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

Gate Charge Test Circuit & Waveform

Resist iv e Sw itc h ing Test Circ ui t & Waveform s

Unclamped Inductive Switching Test Circuit & Waveforms

FQP13N10

Rev. A, May 2000

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll e d by pul s e period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll e d by pul s e period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

FQP13N10

Rev. A, May 2000

Package Dimensions

4.50 ±0.20

9.90 ±0.20

1.52 ±0.10

0.80 ±0.10 2.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2.80 ±0.1015.90 ±0.20

10.08 ±0.30 18.95MAX.

(1.70)

(3.70)(3.00)

(1.46)

(1.00)

(45°)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

1.30 +0.10

–0.05

0.50 +0.10

–0.05

2.54TYP

[2.54 ±0.20]2.54TYP

[2.54 ±0.20]

TO-220

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not intended to be an exhaustive list of all such trademarks.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

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