APTGT75TDU120PG
APTGT75TDU120PG – Rev 1 July, 2006
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Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
E5/ E6
G5
E5
E3/ E 4
C5
G3
C6
E6
G6
C2
E2
G2
C4
E4
G4
E1
C1
G1
E1/E2
C3
E3
E5
G5
C 5C 3
G3
E5/E6
E3
E6
G6
C 4 C 6
E4
G4
E1
E1/E2 E3 /E4
C 1
G1
G2
E2
C 2
S
ymbol Parameter Ma
x
ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 100
IC Continuous Collector Current TC = 80°C 75
ICM Pulsed Collector Current TC = 25°C 175
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 350 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 150A@1150V
VCES = 1200V
IC = 75A @ Tc = 80°C
Applicatio
n
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching freque nc y up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
• RoHS Compliant
Triple Dual Common Source
Fast Trench + Field Stop IGBT®
Power Module
APTGT75TDU120PG
APTGT75TDU120PG – Rev 1 July, 2006
www.microsemi
.
com 2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 250 µA
Tj = 25°C 1.4 1.7 2.1
VCE(sat) Collector Emitter saturation Voltage VGE =15V
IC = 75A Tj = 125°C 2.0 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 3 mA 5.0 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 5340
Coes Output Capacitance 280
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 240
pF
Td(on) Turn-on Delay Time 260
Tr Rise Time 30
Td(off) Turn-off Delay Time 420
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7Ω 70
ns
Td(on) Turn-on Delay Time 285
Tr Rise Time 50
Td(off) Turn-off Delay Time 520
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7Ω 90
ns
Eon Tur n-on Switchi ng Energy Tj = 125°C 7
Eoff Turn-off Switching Energy
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7Ω Tj = 125°C 8.1
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA
IF DC Forward Current Tc = 80°C 75 A
Tj = 25°C 1.6 2.1
VF Diode Forward Voltage IF = 75A
VGE = 0V Tj = 125°C 1.6 V
Tj = 25°C 170
trr Reverse Recovery Time Tj = 125°C 280 ns
Tj = 25°C 7
Qrr Reverse Recovery Charge Tj = 125°C 14 µC
Tj = 25°C 3
Er Reverse Recovery Energy
IF = 75A
VR = 600V
di/dt =2000A/µs
Tj = 125°C 5.5 mJ
APTGT75TDU120PG
APTGT75TDU120PG – Rev 1 July, 2006
www.microsemi
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com 3 - 5
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.35
RthJC Junction to Case Thermal Resistance Diode 0.58
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M6 3 5 N.m
Wt Package Weight 250 g
SP6-P Package outline (dimensions in mm)
5 places (3:1)
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
APTGT75TDU120PG
APTGT75TDU120PG – Rev 1 July, 2006
www.microsemi
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com 4 - 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
01234
VCE (V)
IC (A)
Output Characteristics
VGE
=15V
VGE=13V
VGE=17V
VGE=9V
0
25
50
75
100
125
150
01234
VCE (V)
IC (A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
56789101112
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eoff
Er
0
2.5
5
7.5
10
12.5
15
17.5
0 25 50 75 100 125 150
IC (A)
E (mJ)
VCE = 600V
VGE = 15V
RG = 4.7Ω
TJ = 125°C
Eon
Eoff
Er
0
2
4
6
8
10
12
14
16
0 4 8 12 16 20 24 28 32
Gate Resistance (ohms)
E (mJ)
VCE = 600V
VGE
=15V
IC = 75A
TJ = 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
25
50
75
100
125
150
175
0 400 800 1200 1600
VCE (V)
IC (A)
VGE=15V
TJ=125°C
RG=4.7Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGT75TDU120PG
APTGT75TDU120PG – Rev 1 July, 2006
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com 5 - 5
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=125°C
0
25
50
75
100
125
150
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
IF (A)
Hard
switching
ZCS ZVS
0
10
20
30
40
50
60
0 20406080100120
IC (A)
Fmax, Operating Frequency (kHz)
VCE=600V
D=50%
RG=4.7Ω
TJ=125°C
Tc=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Therm al Imped ance, Junction to Case vs P ulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
M icros emi rese rve s the rig ht to c ha nge , witho ut notice , t he spe cificatio ns and i nfo rmatio n co nta ine d he rein
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