GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMME NDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
TPR 1000
1000 Watts, 45 Volts, Pulsed
Avionics 1090 MHz
GENERAL DESCRIPTION CASE OUTLINE
The TPR 1000 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1090 MHz. The device
has gold thin-film metallization for proven highest MTTF. The transistor
includes input returns for fast rise time. Low thermal resistance package
reduces junction temperature, extends life.
55KV, Style 1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 2900 Watts
o2
Maximum Voltage and Current
BVces Collector to Base Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 80 Amps
Maximu m Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin Power Input Vcc = 45 Volts 250 Watts
Pg
η
c
t
r
VSWR
1
Power Out F = 1090 MHz 1000 Watts
Power Gain 6.0 dB
Collector Efficiency 43 %
Rise T i me 70 ns
Load Mismatch T olerance 9:1
PW = 10 µsec
DF = 1%
F = 1030 MHz
Bvebo
3,4
BVces Collector to Emitter Breakdown Ic = 100mA 65 Volts
4
h
FE4
θjc
2
Emitter to Base Breakdown Ie = 50mA 3.5 Volts
DC - Current Gain Ic = 1000mA, Vce = 5 V 10
Thermal Resistance 0.06 C/W
o
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
3: Cannot measure due to input return
4: Per Side
Issue A June 1997
